Central CXT2907A TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) SYMBOL VCBO Collector-Base Voltage 60 UNITS V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5.0 V IC PD 600 mA 1.2 W TJ,Tstg -65 to +150 °C 104 °C/W Collector Current Power Dissipation Operating and Storage Junction Temperature ΘJA Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125°C VCE=30V, VBE=0.5V IC=10mA IC=10mA IE=10mA IC=150mA, IC=500mA, MIN MAX 10 UNITS nA 10 µA 50 nA 60 V 60 V 5.0 V IB=15mA IB=50mA 0.4 V 1.6 V IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA 1.3 V 2.6 V 75 VCE=10V, IC=1.0mA VCE=10V, IC=10mA 100 hFE hFE VCE=10V, IC=150mA 100 100 300 R3 ( 19-December 2001) Central TM CXT2907A Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) SYMBOL TEST CONDITIONS MIN hFE fT VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz 200 Cob Cib VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz ton td VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, MAX UNITS 50 IB1=15mA IB1=15mA tr toff IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA ts tf VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MHz 8.0 pF 30 pF 45 ns 10 ns 40 ns 100 ns 80 ns 30 ns SOT-89 CASE - MECHANICAL OUTLINE A E B G F H 1 C 3 2 J K R3 L M BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE R3 ( 19-December 2001)