Central CMPT2907A TM Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. Marking Code is C2F. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD UNITS V V V 60 60 5.0 600 350 TJ,Tstg ΘJA mA mW oC oC/W -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125oC VCE=30V, VBE=0.5V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 164 300 UNITS nA µA nA V V V V V V V SYMBOL hFE fT Cob Cib ton td tr toff ts tf TEST CONDITIONS VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MIN 50 200 MAX UNITS 8.0 30 45 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 165