Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR POWER TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high current amplification and switching capability. TM 223 SOT-223 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD UNITS V V V A A W 100 100 6.0 5.0 1.0 2.0 TJ,Tstg ΘJA oC oC/W -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO ICEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=100V VBE=6.0V VCE=90V IC=50mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA VCE=2.0V, IC=500mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=5.0A MIN MAX 10 100 100 100 0.7 1.2 1.2 1.8 30 30 20 312 120 UNITS µA µA µA V V V V V SYMBOL fT Cob Cib td tr ts tf TEST CONDITIONS VCE=10V, IC=500mA, f=10MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA VCC=40V, IC=2.0A, IB1=IB2=200mA VCC=40V, IC=2.0A, IB1=IB2=200mA MIN 30 MAX 250 1000 100 100 2.0 200 UNITS MHz pF pF ns ns µs ns All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR R2 313