FAN7371 High-Current High-Side Gate Drive IC Features Description Floating Channel for Bootstrap Operation to +600V The FAN7371 is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. 4A/4A Sourcing/Sinking Current Driving Capability Common-Mode dv/dt Noise Canceling Circuit 3.3V and 5V Input Logic Compatible Output In-phase with Input Signal 8-Lead Small Outline Package (SOP) Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. Applications The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. Under- Voltage Lockout for VBS 25V Shunt Regulator on VDD and VBS High-Speed Gate Driver The high-current and low-output voltage drop feature makes this device suitable for sustain and energy recovery circuit switches driver in the Plasma Display Panel application, motor drive inverter, switching power supply, and high-power DC-DC converter applications. Sustain Switch Driver in PDP Application Energy-Recovery Circuit Switch Driver in PDP Application High-Power Buck Converter Motor Drive Inverter 8-SOP Ordering Information Part Number FAN7371M Package Pb-Free 8-SOP Yes Operating Temperature Range Packing Method FAN7371MX Note: 1 These devices passed wave soldering test by JESD22A-111. © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 -40°C ~ 125°C TUBE TAPE & REEL www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC October 2007 15V DBOOT3 VS 15V FAN7371 RBOOT1 DBOOT1 8 VB Q3 1 VDD 2 IN VB 8 HO 7 VS 6 NC 5 3 NC 4 GND R4 IN2 C1 IN 6 VS NC 3 5 NC 8 IN HO 7 3 NC VS 6 NC 5 2 IN3 GND 4 D4 R1 To Pannel R2 Q1 VB 2 7 D2 D1 FAN7371 VDD CBOOT3 VDD 1 HO L1 CBOOT1 DBOOT2 1 R3 D3 FAN7371 IN1 RBOOT3 FAN7371 8 VB Q2 R5 Q4 R7 HO IN 6 VS NC 3 5 NC CBOOT2 R6 VDD 1 7 2 IN4 C3 R8 4 GND GND 4 C2 Energy Recovery Circuit Part Sustain Drive Part FAN7371 Rev.03 Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application VIN 15V RBOOT DBOOT FAN7371 1 VDD 2 IN PWM VB 8 HO R1 7 CBOOT C1 3 NC 4 GND L1 R2 VS 6 NC 5 C2 D1 VOUT FAN7371 Rev.01 Figure 2. Step-Down (Buck) DC-DC Converter Application © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 www.fairchildsemi.com 2 FAN7371 — High-Current High-Side Gate Drive IC Typical Application Diagrams 1 VDD 25V GND UVLO 4 PULSE GENERATOR 2 IN 110K NOISE CANCELLER R R S Q Shoot-through current compensated gate driver VDD 8 VB 7 HO 6 VS 25V Pins 3 and 5 are no connection. FAN7371 Rev.04 Figure 3. Functional Block Diagram Pin Configuration VDD 1 IN 2 NC 3 GND 4 FAN7371 8 VB 7 HO 6 VS 5 NC FAN7371 Rev.01 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # Name Description 1 VDD 2 IN Logic Input for High-Side Gate Driver Output 3 NC No Connection 4 GND 5 NC No Connection 6 VS High-Voltage Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply Supply Voltage Ground © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 www.fairchildsemi.com 3 FAN7371 — High-Current High-Side Gate Drive IC Internal Block Diagram Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Symbol Characteristics VS High-Side Floating Offset Voltage VB High-Side Floating Supply Voltage(2) VHO VDD High-Side Floating Output Voltage Low-Side and Logic Supply Voltage (2) Max. Unit VB-VSHUNT VB+0.3 V -0.3 625.0 V VS-0.3 VB+0.3 V -0.3 VSHUNT V -0.3 VDD+0.3 V Allowable Offset Voltage Slew Rate ± 50 V/ns PD Power Dissipation(3, 4, 5) 0.625 W θJA Thermal Resistance 200 °C/W 150 °C 150 °C VIN dVS/dt Logic Input Voltage Min. TJMAX Maximum Junction Temperature TSTG Storage Temperature -55 Notes: 2 3 4 5 This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages. Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit VB High-Side Floating Supply Voltage VS+10 VS+20 V VS High-Side Floating Supply Offset Voltage 6-VDD 600 V VS VB V GND VDD V VHO High-Side Output Voltage VIN Logic Input Voltage VDD Supply Voltage 10 20 V Operating Ambient Temperature -40 125 °C TA © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 www.fairchildsemi.com 4 FAN7371 — High-Current High-Side Gate Drive IC Absolute Maximum Ratings VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Characteristics Test Condition Min. Typ. Max. Unit POWER SUPPLY SECTION IQDD Quiescent VDD Supply Current VIN=0V or 5V 25 70 μA IPDD Operating VDD Supply Current fIN=20KHz, No Load 35 100 μA BOOTSTRAPPED SUPPLY SECTION VBSUV+ VBS Supply Under-Voltage Positive Going Threshold Voltage VIN=0V, VBS=Sweep 8.2 9.2 10.2 V VBSUV- VBS Supply Under-Voltage Negative Going VIN=0V, VBS=Sweep Threshold Voltage 7.5 8.5 9.5 V VBSHYS VBS Supply Under-Voltage Lockout Hysteresis Voltage VIN=0V, VBS=Sweep ILK Offset Supply Leakage Current VB=VS=600V IQBS Quiescent VBS Supply Current VIN=0V or 5V Operating VBS Supply Current CLOAD=1000pF, fIN=20KHz, rms value IPBS 0.7 V 10 μA 60 120 μA 1.0 2.8 mA SHUNT REGULATOR SECTION VSHUNT VDD and VBS Shunt Regulator Clamping Voltage ISHUNT=5mA 24 25 V INPUT LOGIC Section VIH Logic “1” Input Voltage VIL Logic “0” Input Voltage IIN+ Logic Input High Bias Current VIN=5V IIN- Logic Input Low Bias Current VIN=0V RIN Input Pull-down Resistance 2.5 V 45 70 0.8 V 70 μA 2 μA 110 KΩ GATE DRIVER OUTPUT SECTION VOH High-Level Output Voltage (VBIAS - VO) No Load 1.2 V VOL Low-Level Output Voltage No Load 30 mV IO+ Output High, Short-Circuit Pulsed Current(6) VHO=0V, VIN=5V, PW ≤10µs 3.0 4.0 A IO- Output Low, Short-Circuit Pulsed Current(6) VHO=15V,VIN=0V, PW ≤10µs 3.0 4.0 A VS Allowable Negative VS pin Voltage for IN Signal Propagation to HO -9.8 -7.0 V Note: 6 These parameters guaranteed by design. Dynamic Electrical Characteristics VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit ton Turn-on Propagation Delay Time VS=0V 150 210 ns toff Turn-off Propagation Delay Time VS=0V 150 210 ns tr Turn-on Rise Time 25 50 ns tf Turn-off Fall Time 15 40 ns © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 www.fairchildsemi.com 5 FAN7371 — High-Current High-Side Gate Drive IC Electrical Characteristics 250 200 200 tOFF [ns] tON [ns] 250 150 100 150 100 50 0 -40 50 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 50 50 40 40 30 30 20 20 10 10 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 100 120 20 40 60 80 100 120 2.0 80 1.5 IPBS [mA] IPDD [μA] 80 Figure 8. Turn-off Fall Time vs. Temp. 100 60 40 1.0 0.5 20 -20 0 20 40 60 80 100 0.0 -40 120 Temperature [°C] -20 0 20 40 60 80 100 120 Temperature [°C] Figure 9. Operating VDD Supply Current vs. Temp. Figure 10. Operating VBS Supply Current vs. Temp. © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 60 Temperature [°C] Figure 7. Turn-on Rise Time vs. Temp. 0 -40 40 Figure 6. Turn-off Propagation Delay vs. Temp. tF [ns] tR [ns] Figure 5. Turn-on Propagation Delay vs. Temp. 0 -40 20 Temperature [°C] www.fairchildsemi.com 6 FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics 9.5 9.5 9.0 VBSUV- [V] VBSUV+ [V] 10.0 9.0 8.5 8.0 8.5 8.0 -40 -20 0 20 40 60 80 100 7.5 -40 120 -20 0 Temperature [°C] 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.0 0.5 0.5 0 20 40 60 60 80 100 120 1.5 1.0 -20 40 Figure 12. VBS UVLO- vs. Temp. VIL [V] VIH [V] Figure 11. VBS UVLO+ vs. Temp. 0.0 -40 20 Temperature [°C] 80 100 0.0 -40 120 -20 0 Temperature [°C] 20 40 60 80 100 120 Temperature [°C] Figure 13. Logic High Input Voltage vs. Temp. Figure 14. Logic Low Input Voltage vs. Temp. 280 1.50 240 1.25 VOH [V] RIN [kΩ] 200 160 120 1.00 0.75 80 0.50 40 0.25 0 -40 -20 0 20 40 60 80 100 0.00 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 15. Input Pull-down Resistance vs. Temp. Figure 16. High-Level Output Voltage vs. Temp. © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 -20 www.fairchildsemi.com 7 FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics (Continued) 6.5 6.0 6.0 5.5 5.5 5.0 5.0 IO- [A] IO+ [A] 6.5 4.5 4.5 4.0 4.0 3.5 3.5 3.0 3.0 2.5 -40 -20 0 20 40 60 80 100 2.5 -40 120 -20 0 Temperature [°C] 7 7 6 6 5 5 4 4 3 3 12 14 16 40 60 80 100 120 Figure 18. Output Low, Short-Circuit Pulsed Current vs. Temp. IO- [A] IO+ [A] Figure 17. Output High, Short-Circuit Pulsed Current vs. Temp. 2 10 20 Temperature [°C] 18 2 10 20 12 14 VBS [V] 16 18 20 VBS [V] Figure 19. Output High, Short-Circuit Pulsed Current vs. Supply Voltage Figure 20. Output Low, Short-Circuit Pulsed Current vs. Supply Voltage 80 120 100 40 25°C 25°C 60 125°C 40 125°C 20 -40°C 80 -40°C IQBS [μA] IQDD [μA] 60 20 0 10 12 14 16 18 0 10 20 Supply Voltage [V] 14 16 18 20 Supply Voltage [V] Figure 21. Quiescent VDD Supply Current vs. Supply Voltage Figure 22. Quiescent VBS Supply Current vs. Supply Voltage © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 12 www.fairchildsemi.com 8 FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics (Continued) Timing Diagram 15V 50% VDD 10nF VB 10µF 10µF 0.1µF 50% IN 15V VS GND ton FAN7371 tr toff tf 1000pF 90% 90% HO IN OUT (A) 10% 10% (B) Figure 23. Switching Time Test Circuit and Waveform Definitions © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 www.fairchildsemi.com 9 FAN7371 — High-Current High-Side Gate Drive IC Switching Time Definitions 5.00 4.80 A 0.65 3.81 8 5 B 6.20 5.80 PIN ONE INDICATOR 1.75 4.00 3.80 1 5.60 4 1.27 (0.33) 0.25 M 1.27 C B A LAND PATTERN RECOMMENDATION SEE DETAIL A 0.25 0.10 1.75 MAX 0.25 0.19 C 0.10 0.51 0.33 0.50 x 45° 0.25 R0.10 C OPTION A - BEVEL EDGE GAGE PLANE R0.10 OPTION B - NO BEVEL EDGE 0.36 NOTES: UNLESS OTHERWISE SPECIFIED 8° 0° 0.90 0.406 A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA, ISSUE C, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M. E) DRAWING FILENAME: M08AREV13 SEATING PLANE (1.04) DETAIL A SCALE: 2:1 Figure 24. 8-Lead Small Outline Package (SOP) © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 www.fairchildsemi.com 10 FAN7371 — High-Current High-Side Gate Drive IC Physical Dimensions ® ACEx Build it Now¥ CorePLUS¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ ® EcoSPARK ® ® Fairchild ® Fairchild Semiconductor FACT Quiet Series™ ® FACT ® FAST FastvCore¥ FPS¥ ® FRFET SM Global Power Resource ® Power247 ® POWEREDGE Power-SPM¥ ® PowerTrench Programmable Active Droop¥ ® QFET QS¥ QT Optoelectronics¥ Quiet Series¥ RapidConfigure¥ SMART START¥ ® SPM STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 Green FPS¥ Green FPS¥ e-Series¥ GTO¥ i-Lo¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ Motion-SPM™ ® OPTOLOGIC ® OPTOPLANAR ® PDP-SPM™ ® Power220 SuperSOT¥-8 SyncFET™ ® The Power Franchise TinyBoost¥ TinyBuck¥ ® TinyLogic TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ PSerDes¥ ® UHC UniFET¥ VCX¥ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2007 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.1 www.fairchildsemi.com 11 FAN7371 — High-Current High-Side Gate Drive IC TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.