LT1195 Low Power, High Speed Operational Amplifier U DESCRIPTIO FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Gain-Bandwidth Product Unity-Gain Stable Slew Rate Output Current Low Supply Current High Open-Loop Gain Low Cost Single Supply 5V Operation Industry Standard Pinout Output Shutdown 50MHz 165V/µs ±20mA 12mA 7.5V/mV Because the LT1195 is a true operational amplifier, it is an ideal choice for wideband signal conditioning, fast integrators, peak detectors, active filters, and applications requiring speed, accuracy, and low cost. UO APPLICATI ■ ■ ■ ■ ■ S The LT1195 is a low power version of the popular LT1190, and is available in 8-pin miniDIPs and SO packages with standard pinouts. The normally unused pin 5 is used for a shutdown feature that shuts off the output and reduces power dissipation to a mere 15mW. Video Cable Drivers Video Signal Processing Fast Peak Detectors Fast Integrators Video Cable Drivers Pulse Amplifiers UO ■ The LTC1195 is a video operational amplifier optimized for operation on single 5V and ±5V supply. Unlike many high speed amplifiers, the LT1195 features high open-loop gain, over 75dB, and the ability to drive heavy loads to a full power bandwidth of 8.5 MHz at 6VP-P. The LT1195 has a unity-gain stable bandwidth of 50MHz, and a 60° phase margin, and consumes only 12mA of supply current, making it extremely easy to use. TYPICAL APPLICATI Fast Pulse Detector 5V RI 1k VIN RS 50Ω Pulse Detector Response 3 CI 60pF + LT1195 2 – D1 1N5712 7 6 OUTPUT RL 10k 4 CL 1000pF –5V –5V RB 10k –5V D2 1N5712 INPUT 1195 TA01 1195TAO2 1 LT1195 U U RATI GS PACKAGE/ORDER I FOR ATIO W W W Total Supply Voltage (V+ to V – ) ............................... 18V Differential Input Voltage ......................................... ±6V Input Voltage ........................................................... ±VS Output Short-Circuit Duration (Note 1) ......... Continuous Operating Temperature Range LT1195M ........................................ –55°C to 125°C LT1195C ................................................ 0°C to 70°C Junction Temperature (Note 2) Plastic Package (CN8, CS8) ............................ 150°C Ceramic Package (CJ8, MJ8) .......................... 175°C Storage Temperature Range ................. –65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C + ±5V – ELECTRICAL CHARACTERISTICS W AXI U U ABSOLUTE TOP VIEW BAL 1 8 BAL –IN 2 7 V+ +IN 3 6 OUT V– 4 5 S/D ORDER PART NUMBER N8 PACKAGE J8 PACKAGE 8-LEAD CERAMIC DIP 8-LEAD PLASTIC DIP LT1195MJ8 LT1195CJ8 LT1195CN8 LT1195CS8 S8 PACKAGE 8-LEAD PLASTIC SOIC S8 PART MARKING TJMAX = 175°C, θJA = 100°C/ W (J8) TJMAX = 150°C, θJA = 100°C/ W (N8) TJMAX = 150°C, θJA = 150°C/ W (S8) 1195 TA = 25°C VS = ±5V, CL ≤ 10pF, pin 5 open circuit, unless otherwise noted. SYMBOL VOS PARAMETER Input Offset Voltage IOS IB en in RIN CMRR PSRR AVOL Input Offset Current Input Bias Current Input Noise Voltage Input Noise Current Input Resistance Differential Mode Common Mode Input Capacitance Input Voltage Range Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain VOUT Output Voltage Swing SR FPBW GBW tr1, tf1 tr2, tf2 tPD Slew Rate Full Power Bandwidth Gain-Bandwidth Product Rise Time, Fall Time Rise Time, Fall Time Propagation Delay Overshoot Settling Time Differential Gain Differential Phase CIN tS Diff AV Diff Ph 2 CONDITIONS J8, N8 Package S8 Package MIN fO = 10kHz fO = 10kHz AV = 1 (Note 3) VCM = –2.5 to 3.5V VS = ±2.375V to ±8V RL = 1k, VOUT = ±3V RL = 150Ω, VOUT = ±3V VS = ±8V, RL = 1k, VOUT = ±5V VS = ±5V, RL = 1k VS = ±8V, RL = 1k AV = –1, RL = 1k, (Note 4, 9) VOUT = 6VP-P, (Note 5) AV = 50, VOUT = ±1.5V, 20% to 80%, (Note 9) AV = 1, VOUT = ±125mV, 10% to 90% AV = 1, VOUT = ±125mV, 50% to 50% AV = 1, VOUT = ±125mV 3V Step, 0.1%, (Note 6) RL = 150Ω, AV = 2, (Note 7) RL = 150Ω, AV = 2, (Note 7) –2.5 60 60 2.0 0.5 ±3.8 ±6.7 110 125 LT1195M/C TYP 3.0 3.0 0.2 ±0.5 70 2.0 230 20 2.2 MAX 8.0 10.0 1.0 ±2.0 3.5 85 85 7.5 1.5 11.0 ±4.0 ±7.0 165 8.75 50 170 3.4 2.5 22 220 1.25 0.86 250 UNITS mV mV µA µA nV√Hz pA√Hz kΩ MΩ pF V dB dB V/mV V/mV V/mV V V V/µs MHz MHz ns ns ns % ns % DEGP-P LT1195 + ±5V – ELECTRICAL CHARACTERISTICS TA = 25°C VS = ±5V, CL ≤ 10pF, pin 5 open circuit, unless otherwise noted. SYMBOL IS IS/D tON tOFF PARAMETER Supply Current Shutdown Supply Current Shutdown Pin Current Turn-On Time Turn-Off Time CONDITIONS Pin 5 at V – Pin 5 at V – Pin 5 from V – to Ground, RL = 1k Pin 5 from Ground to V –, RL = 1k 5V ELECTRICAL CHARACTERISTICS VS+ = 5V, VS –, = OV, VCM = 2.5V, CL ≤ MIN LT1195M/C TYP MAX 12 16 0.8 1.5 5 25 160 700 UNITS mA mA µA ns ns LT1195M/C TYP MAX UNITS TA = 25°C 10pF, pin 5 open circuit, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN VOS Input Offset Voltage J8, N8 Package S8 Package IOS IB Input Offset Current Input Bias Current CMRR AVOL VOUT Input Voltage Range Common-Mode Rejection Ratio Large-Signal Voltage Gain Output Voltage Swing (Note 3) VCM = 2V to 3.5V RL = 150Ω to Ground, VOUT = 1V to 3V RL = 150Ω to Ground VOUT High SR GBW IS Slew Rate Gain-Bandwidth Product Supply Current AV = –1, VOUT = 1V to 3V IS/D Shutdown Supply Current Shutdown Pin Current Pin 5 at V – Pin 5 at V – 3.0 3.0 0.2 ±0.5 2.0 60 0.5 3.5 VOUT Low + –±5V ELECTRICAL CHARACTERISTICS 9.0 11.0 1.0 ±2.0 mV mV µA µA 3.5 V dB V/mV V 0.25 140 45 11 0.4 15 V V/µs MHz mA 0.8 5 1.5 25 mA µA MAX 15.0 UNITS mV µV/°C µA µA dB dB V/mV V/mV V mA mA µA 85 3.0 3.8 –55°C ≤ TA ≤ 125°C, (Note 10) VS = ±5V, pin 5 open circuit, unless otherwise noted. SYMBOL VOS ∆VOS/∆T IOS IB CMRR PSRR AVOL PARAMETER Input Offset Voltage Input VOS Drift Input Offset Current Input Bias Current Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain VOUT IS Output Voltage Swing Supply Current Shutdown Supply Current Shutdown Pin Current IS/D CONDITIONS VCM = –2.5V to 3.5V VS = ±2.375V to ±8V RL = 1k, VOUT = ±3V RL = 150Ω, VOUT = ±3V RL = 1k Pin 5 at V –, (Note 8) Pin 5 at V – MIN 55 55 1.50 0.25 ±3.7 LT1195M TYP 3.0 17 0.2 ±0.5 85 80 5.0 0.8 ±3.9 12 0.8 5 2.0 ±2.5 18 2.5 25 3 LT1195 + – 5V ELECTRICAL CHARACTERISTICS 0°C ≤ TA ≤ 70°C VS = ±5V, pin 5 open circuit, unless otherwise noted. SYMBOL VOS PARAMETER Input Offset Voltage ∆VOS /∆T IOS IB CMRR PSRR AVOL Input VOS Drift Input Offset Current Input Bias Current Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain VOUT IS Output Voltage Swing Supply Current Shutdown Supply Current Shutdown Pin Current IS/D CONDITIONS J8, N8 Package S8 Package VCM = –2.5V to 3.5V VS = ±2.375V to ±5V RL = 1k, VOUT = ±3V RL = 150Ω, VOUT = ±3V RL = 1k = 5V, VS– Pin 5 at Pin 5 at V – PARAMETER CONDITIONS VOS Input Offset Voltage J8, N8 Package S8 Package ∆VOS /∆T IOS IB Input VOS Drift Input Offset Current Input Bias Current Input Voltage Range Common-Mode Rejection Ratio Output Voltage Swing IS IS/D Supply Current Shutdown Supply Current Shutdown Pin Current (Note 3) VCM = 2V to 3.5V RL = 150Ω to Ground Pin 5 at V – , (Note 8) Pin 5 at V – Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted continuously. Note 2: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formats: LT1195MJ8, LT1195CJ8: TJ = TA + (PD × 100°C/ W) LT1195N: TJ = TA + (PD × 100°C/ W) LT1195CS: TJ = TA + (PD × 150°C/ W) Note 3: Exceeding the input common-mode range may cause the output to invert. Note 4: Slew rate is measured between ±1V on the output, with ±3V input step. Note 5: Full power bandwidth is calculated from the slew rate measurement: FPBW = SR/2πVP. 4 LT1195C TYP 3.0 3.0 12 0.2 ±0.5 85 90 7.5 1.5 ±3.9 12 0.9 5 MAX 10.0 15.0 17 2.0 25 UNITS mV mV µV/°C µA µA dB dB V/mV V/mV V mA mA µA MAX UNITS 10.0 15.0 mV mV µV/°C µA µA V dB V V mA mA µA 1.7 ±2.5 0°C ≤ TA ≤ 70°C = OV, VCM = 2.5V, pin 5 open circuit, unless otherwise noted. SYMBOL CMRR VOUT 60 60 2.0 0.3 ±3.7 V –, (Note 8) 5V ELECTRICAL CHARACTERISTICS VS+ MIN MIN LT1195C TYP 1.0 1.0 15 0.2 ±0.5 VOUT High VOUT Low 2.0 60 3.5 85 3.75 0.15 12 0.9 5 1.7 ±2.5 3.5 0.4 16 2.0 25 Note 6: Settling time measurement techniques are shown in “Take the Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985. Note 7: NTSC (3.58MHz). For RL = 1k, Diff AV = 0.3%, Diff Ph = 0.35°. Note 8: See Applications Information section for shutdown at elevated temperatures. Do not operate the shutdown above TJ > 125°C. Note 9: AC parameters are 100% tested on the ceramic and plastic DIP packaged parts (J8 and N8 suffix) and are sample tested on every lot of the SO packaged parts (S8 suffix). Note 10: Do not operate at AV < 2 for TA < 0°C. LT1195 U W TYPICAL PERFOR A CE CHARACTERISTICS Input Bias Current vs Common-Mode Voltage V+ 100 3.0 VS = ±5V VS = ±5V 1.5 1.0 –55°C 0.5 25°C 0 0 COMMON-MODE RANGE (V) INPUT BIAS CURRENT (nA) 2.0 –0.5 +IB 2.5 –100 –IB –200 IOS –300 –0.5 –5 –4 –3 –2 –1 0 1 2 3 COMMON-MODE VOLTAGE (V) 4 5 –400 –50 0 25 75 50 TEMPERATURE (°C) –25 400 300 200 100 0 1k 10k FREQUENCY (Hz) 10 8 6 2 10 100 1k 10k FREQUENCY (Hz) 50 0 25 75 TEMPERATURE (°C) 125°C 10 100 125 2 0 4 6 8 ±SUPPLY VOLTAGE (V) Open-Loop Gain vs Temperature TA = –55°C VS = ±5V VO = ±3V 1 –1 TA = 25°C TA = 125°C 6k 4k 2k RL = 150Ω TA = –55°C –5 10 100 LOAD RESISTANCE (Ω) RL = 1k 8k TA = 25°C TA = 125°C –3 10 1195 G06 3 VS/D = –VEE –25 12 10k VS = ±5V OUTPUT VOLTAGE SWING (V) SHUTDOWN SUPPLY CURRENT (mA) 1 125 –55°C 1195 G05 VS/D = –VEE + 0.6V 2 100 25°C 8 100k 5 VS/D = –VEE + 0.2V 0 25 50 75 TEMPERATURE (°C) 14 Output Voltage Swing vs Load Resistance VS/D = –VEE + 0.4V –25 4 100k 6 0 –50 V + = –1.8V TO –9V 1.0 Supply Current vs Supply Voltage VS = ±5V TA = 25°C RS = 100k 12 Shutdown Supply Current vs Temperature 3 1.5 16 14 1195 G04 4 2.0 1195 G03 SUPPLY CURRENT (mA) EQUIVALENT INPUT NOISE CURRENT (pA/√Hz) EQUIVALENT INPUT NOISE VOLTAGE (nV/√Hz) VS = ±5V TA = 25°C RS = 0Ω 500 5 –2.0 Equivalent Input Noise Current vs Frequency 600 VS = ±5V –1.5 1195 G02 Equivalent Input Noise Voltage vs Frequency 100 V + = 1.8V TO 9V V– –50 125 100 1195 G01 10 –1.0 0.5 125°C OPEN-LOOP GAIN (V/V) INPUT BIAS CURRENT (µA) Common-Mode Voltage vs Temperature Input Bias Current vs Temperature 1k 0 –50 –25 0 25 75 50 TEMPERATURE (°C) 100 125 1195 G07 1195 G08 1195 G09 5 LT1195 U W TYPICAL PERFOR A CE CHARACTERISTICS 100 20k 60 VOLTAGE GAIN (dB) 40 GAIN 20 20 VS = ±5V TA = 25°C RL = 1k 0 PHASE MARGIN (DEG) 60 60 0 OPEN-LOOP VOLTAGE GAIN (V/V) 80 80 –20 –20 100k 1M 10M FREQUENCY (Hz) 16k 12k 8k 4k 0 100 100M AV = 20dB VS = ±5V VO = ±3V TA = 25°C PHASE GAIN-BANDWIDTH PRODUCT (MHz) 100 40 Gain-Bandwidth Product vs Supply Voltage Open-Loop Voltage Gain vs Load Resistance Gain and Phase vs Frequency 1k LOAD RESISTANCE (Ω) 70 60 60 50 50 40 40 30 30 –50 –25 50 25 75 0 TEMPERATURE (°C) 20 125 100 AV = 10 1 AV = 1 0.1 0.01 1k 10k 100k 1M FREQUENCY (Hz) 10M –20 1k 10k 100k 1M FREQUENCY (Hz) 10M 100M 1195 G16 6 30 20 10 V+ –0.7 VS = ± 5V OUTPUT SATURATION VOLTAGE (V) 0 OUTPUT SHORT-CIRCUIT CURRENT (mA) POWER SUPPLY REJECTION RATIO (dB) 20 40 1M 10M FREQUENCY (Hz) 100M 1195 G15 36 80 +PSRR –PSRR VS = ±5V TA = 25°C RL = 1k 50 0 100k 100M Output Short-Circuit Current vs Temperature VS = ±5V TA = 25°C VRIPPLE = ±300mV 10 1195 G14 Power Supply Rejection Ratio vs Frequency 40 4 6 8 ±SUPPLY VOLTAGE (V) Common-Mode Rejection Ratio vs Frequency 10 1195 G13 60 2 1195 G12 COMMON-MODE REJECTION RATIO (dB) 70 0 60 80 UNITY-GAIN PHASE MARGIN 20 VS = ±5V TA = 25°C OUTPUT IMPEDANCE (Ω) 80 30 100 PHASE MARGIN (DEG) UNITY-GAIN FREQUENCY (MHz) 90 40 Output Impedance vs Frequency 90 VS = ±5V RL = 1k UNITY-GAIN FREQUENCY TA = 125°C 1195 G11 Unity-Gain Frequency and Phase Margin vs Temperature 100 TA = 25°C 50 10k 1195 G10 TA = –55°C 35 34 33 32 31 30 –50 –25 50 0 25 75 TEMPERATURE (°C) 100 125 1195 G17 ±Output Swing vs Supply Voltage –0.8 125°C –0.9 25°C –1.0 –55°C –1.1 0.5 RL = RFB ±1.8V ≤ VS ≤ ±9V 0.4 125°C 25°C 0.3 –55°C 0.2 0.1 V– 0 2 8 6 4 SUPPLY VOLTAGE (V) 10 1195 G18 LT1195 U W TYPICAL PERFOR A CE CHARACTERISTICS Output Voltage Step vs Settling Time, AV = –1 Slew Rate vs Temperature 250 –SLEW RATE 200 +SLEW RATE VS = ±5V TA = 25°C RL = 1k 2 10mV OUTPUT VOLTAGE STEP (V) OUTPUT VOLTAGE STEP (V) SLEW RATE (V/µs) 4 4 VS = ±5V RFB = 1k VO = ±2V AV = –1 150 –50 Output Voltage Step vs Settling Time, AV = 1 1mV 0 –2 10mV 1mV 50 0 25 75 TEMPERATURE (°C) 100 125 2 10mV 1mV 0 10mV 1mV –2 –4 –4 –25 VS = ±5V TA = 25°C RL = 1k 0 200 100 300 SETTLING TIME (ns) 400 200 100 300 SETTLING TIME (ns) 0 1195 G21 1195 G20 1195 G19 Large-Signal Transient Response 400 Large-Signal Transient Response AV = 1, RL = 1k AV = –1, RL = 1k 1195 G23 1195 G22 Overload Recovery 5V 3 + 7 LT1195 2 – 6 4 8 1 INPUT OFFSET VOLTAGE CAN BE ADJUSTED OVER A ±150mV RANGE WITH A 1k to 10k POTENTIOMETER. 1195 G25 AV = 1, VIN = 11VP-P 1195 G24 7 LT1195 W U U UO APPLICATI S I FOR ATIO Power Supply Bypassing The LT1195 is quite tolerant of power supply bypassing. In some applications a 0.1µF ceramic disc capacitor placed 0.5 inches from the ampifier is all that is required. In applications requiring good settling time, it is important to use multiple bypass capacitors. A 0.1µF ceramic disc in parallel with a 4.7µF tantalum is recommended. Cable Terminations The LT1195 operational amplifier has been optimized as a low cost video cable driver. The ±20mA guaranteed output current enables the LT1195 to easily deliver 6VP-P into 150Ω, while operating on ±5V supplies. Double-Terminated Cable Driver 5V 3 7 + LT1195 2 – RG 4 75Ω 6 RFB CABLE 75Ω –5V 1195 AI01 Cable Driver Voltage Gain vs Frequency 8 receiving end (75Ω to ground) to absorb unwanted energy. The best performance can be obtained by double termination (75Ω in series with the output of the amplifier, and 75Ω to ground at the other end of the cable). This termination is preferred because reflected energy is absorbed at each end of the cable. When using the double termination technique it is important to note that the signal is attenuated by a factor of 2, or 6dB. This can be compensated for by taking a gain of 2, or 6dB in the amplifier. Using the Shutdown Feature The LT1195 has a unique feature that allows the amplifier to be shut down for conserving power, or for multiplexing several amplifiers onto a common cable. The amplifier will shutdown by taking pin 5 to V –. In shutdown, the amplifier dissipates 15mW while maintaining a true high impedance output state of 15k in parallel with the feedback resistors. The amplifiers must be used in a noninverting configuration for MUX applications. In inverting configurations the input signal is fed to the output through the feedback components. The following scope photos show that with very high RL, the output is truly high impedance; the output slowly decays toward ground. Additionally, when the output is loaded with as little as 1k the amplifier shuts off in 700ns. This shutoff can be under the control of HC CMOS operating between 0V and –5V. 6 VOLTAGE GAIN (dB) 4 AV = 2 RFB = 1k RG = 330Ω 2 0 Output Shutdown AV = 1 RFB = 1k RG = 1k –2 –4 –6 –8 –10 VS = ±5V TA = 25°C –12 100k 1M 10M FREQUENCY (Hz) 100M 1195 AI02 When driving a cable it is important to terminate the cable to avoid unwanted reflections. This can be done in one of two ways: single termination or double termination. With single termination, the cable must be terminated at the 8 1MHz SINE WAVE GATED OFF WITH SHUTDOWN PIN AV = 1, RL = SCOPE PROBE 1195 AI03 LT1195 U W U UO APPLICATI S I FOR ATIO Output Shutdown Single 5V Video Amplifier VIN 5V + 1k 10µF 3 + 5V 7 LT1195 R1 3k + 2 RG 1k – 4 1000µF 6 + 75Ω RFB 1k 10k R2 2k 100µF 75Ω 1195 AI05 1MHz SINE WAVE GATED OFF WITH SHUTDOWN PIN AV = 1, RL = 1k 1195 AI04 Video Multiburst at Pin 6 of Amplifier Detecting Pulses The front page shows a circuit for detecting very fast pulses. In this open-loop design, the detector diode is D1 and a level shifting or compensating diode is D2. A load resistor RL is connected to –5V, and an identical bias resistor RB is used to bias the compensating diode. Equal value resistors ensure that the diode drops are equal. A very fast pulse will exceed the amplifier slew rate and cause a long overload recovery time. Some amount of dV/dt limiting on the input can help this overload condition, however too much will delay the response. Also shown is the response to a 4VP-P input that is 150ns wide. The maximum output slew rate in the photo is 30V/µs. This rate is set by the 30mA current limit driving 1000pF. 3V 2V 1V 0V 1195 AI06 Vector Plot of Standard Color Burst Operation on Single 5V Supply The LT1195 has been optimized for a single 5V supply. This circuit amplifies standard composite video (1VP-P including sync) by 2 and drives a double-terminated 75Ω cable. Resistors R1 and R2 bias the amplifier at 2V, allowing the sync pulses to stay within the common-mode range of the amplifier. Large coupling capacitors are required to pass the low frequency sidebands of the composite signal. A multiburst response and vector plot standard color burst are shown. 1195 AI07 9 LT1195 W U U UO APPLICATI S I FOR ATIO 1.5MHz Square Wave Input and Equalized Response Through 1000 Feet of Twisted-Pair Send Color Video Over Twisted-Pair With an LT1195 it is possible to send and receive color composite video signals more than 1000 feet on a low cost twisted-pair. A bidirectional “video bus” consists of the LT1195 op amp and the LT1187 video difference amplifier. A pair of LT1195s at TRANSMIT 1, is used to generate differential signals to drive the line which is back-terminated in its characteristic impedance. The LT1187, twisted-pair receiver, converts signals from differential to single-ended. Topology of the LT1187 provides for cable compensation at the amplifier’s feedback node as shown. In this case, 1000 feet of twisted-pair is compensated with 1000pF and 50Ω to boost the 3dB bandwidth of the system from 750kHz to 4MHz. This bandwidth is adequate to pass a 3.58MHz chrome subcarrier, and the 4.5MHz sound subcarrier. Attenuation in the cable can be compensated by lowering the gain set resistor RG. At TRANSMIT 2, another pair of LT1195s serve the dual function to provide cable termination via low output impedance, and generate differential signals for TRANSMIT 2. Cable termination is made up of 15Ω and 33Ω attentuator to reduce the differential input signal to the LT1187. Maximum input signal for the LT1187 is 760mVP-P. 1195 A109 Multiburst Pattern Passed Through 1000 Feet of Twisted-Pair 1.5MHz Square Wave Input and Unequalized Response Through 1000 Feet of Twisted-Pair 1195 A110 Vector Plot of Standard Color Burst Through 1000 Feet of Twisted-Pair 1195 A108 1195 A111 10 LT1195 W U U UO APPLICATI S I FOR ATIO Bidirectional Video Bus TRANSMIT 1 3 + 1k 2 75Ω TRANSMIT 2 6 6 LT1195 – 1k 1k – – 6 6 LT1195 + 33Ω S/D 75Ω 6 75Ω 2 1k 1k 1k 3 1k LT1195 – 1k 2 3 + + 5 – LT1187 + RFB – 33Ω 15Ω 3 1000 FT TWISTED-PAIR 15Ω 15Ω 15Ω 2 33Ω LT1195 + 33Ω 3 S/D 3 2 1 1 8 8 + – + – 300Ω 5 LT1187 6 75Ω RFB 300Ω 1000pF 1000pF RG 300Ω 2 50Ω 50Ω RG 300Ω RECEIVE 1 RECEIVE 2 1195 AI12 W W SIWPLIFIED SCHEWATIC 7 V+ VBIAS VBIAS CM + 3 CFF – 2 +V 6 VOUT +V * 4 V– 5 1 8 S/D BAL BAL 1195 SS * SUBSTRATE DIODE, DO NOT FORWARD BIAS Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT1195 U PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted. J8 Package 8-Lead Ceramic DIP CORNER LEADS OPTION (4 PLCS) 0.290 – 0.320 (7.366 – 8.128) 0.008 – 0.018 (0.203 – 0.460) 0.023 – 0.045 (0.58 – 1.14) HALF LEAD OPTION 0.045 – 0.065 (1.14 – 1.65) FULL LEAD OPTION 0.200 (5.080) MAX 8 6 7 5 0.015 – 0.060 (0.381 – 1.524) 0.025 (0.635) RAD TYP 0° – 15° 0.220 – 0.310 (5.588 – 7.874) 1 0.045 – 0.065 (1.14 – 1.65) 0.385 ± 0.025 (9.779 ± 0.635) 0.405 (10.287) MAX 0.005 (0.127) MIN 2 3 4 0.125 3.175 0.100 ± 0.010 MIN (2.540 ± 0.254) 0.014 – 0.026 (0.360 – 0.660) J8 0293 N8 Package 8-Lead Plastic DIP 0.300 – 0.320 (7.620 – 8.128) 0.400 (10.160) MAX 0.130 ± 0.005 (3.302 ± 0.127) 0.045 – 0.065 (1.143 – 1.651) 8 0.009 – 0.015 (0.229 – 0.381) ( +0.025 0.325 –0.015 +0.635 8.255 –0.381 7 6 5 0.065 (1.651) TYP 0.125 (3.175) MIN 0.045 ± 0.015 (1.143 ± 0.381) ) 0.250 ± 0.010 (6.350 ± 0.254) 0.020 (0.508) MIN 1 0.018 ± 0.003 (0.457 ± 0.076) 0.100 ± 0.010 (2.540 ± 0.254) 2 3 4 N8 0392 S8 Package 8-Lead Plastic SOIC 0.189 – 0.197 (4.801 – 5.004) 8 0.010 – 0.020 × 45° (0.254 – 0.508) 0.016 – 0.050 0.406 – 1.270 6 5 0.053 – 0.069 (1.346 – 1.752) 0.004 – 0.010 (0.101 – 0.254) 0.008 – 0.010 (0.203 – 0.254) 0°– 8° TYP 7 0.014 – 0.019 (0.355 – 0.483) 0.228 – 0.244 (5.791 – 6.197) 0.150 – 0.157 (3.810 – 3.988) 0.050 (1.270) BSC 1 2 3 4 SO8 0392 12 Linear Technology Corporation LT/GP 0293 10K REV 0 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977 LINEAR TECHNOLOGY CORPORATION 1993