KSA1625 KSA1625 High Voltage Switch • High Breakdown Voltage • High Speed Switching TO-92 1 1. Emitter 2. Collector 3. Base PNP Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -400 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -400 V IB Base Current IC Collector Current (DC) -0.5 A ICP Collector Current (Pulse) -1.0 A W -7 V -0.25 A PC Collector Power Dissipation (Ta=25°C) 0.75 PC Collector Power Dissipation (TC=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC= -1mA, IB=0 Min. -400 ICBO Collector Cut-off Current VCB= -400V, IE=0 -1 µA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -1 µA 40 Max. Units V hFE Dc Current Gain VCE= -5V, IC= -50mA VCE(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA 200 -1 V VBE(sat) Base-Emitter Saturation Voltage IC= -100mA, IB= -10mA -1.2 V fT Current Gain Bandwidth Product VCE= -10V, IC= -10mA Cob Output Capacitance VCB= -10V, f=1MHz 10 25 MHz pF tON Turn On Time 1 µs tSTG Storage Time 5 µs tF Fall Time IC= -100mA, RL=1.5kΩ IB1=- IB2= -10mA VCC= -150V 1 µs hFE Classification Classification M L K hFE 40 ~ 80 60 ~ 120 100 ~ 200 ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 KSA1625 Typical Characteristics 1000 -0.5 -0.4 IB=-160mA IB=-140mA -0.3 IB=-120mA IB=-100mA -0.2 IB=-80mA IB=-60mA IB=-40mA -0.1 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE= - 5V A I B=-200m I B=-180mA 100 10 IB=-20mA -0 -2 -4 -6 -8 1 -0.1 -10 -1 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic -0.01 -0.1 1000 Cob[pF], CAPACITANCE VBE(sat) V CE(sat) -0.1 -1 -10 -100 f=1.0MHz 100 10 1 -0.1 -1000 -1 IC[mA], COLLECTOR CURRENT -100 Figure 4. Collector Output Capacitance 1000 -10 o Ta=25 C Single Pulse IC[A], COLLECTOR CURRENT VCE = -10V 100 10 1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation -1000 -1 ICMAX(Pulse) 10 0µ s 1m s 10 µs DC -0.1 VCEO(sus)MAX fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT -10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage -1 -1000 Figure 2. DC current Gain IC= - 10 IB -1 -100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -10 -0.01 -0.001 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A2, June 2002 KSA1625 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H7