KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 350 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 40 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 30 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 5 V ICBO Collector Cut-off Current VCB=30V, IE=0 hFE DC Current Gain VCE=1V, IC=100mA VCE (sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.1A 0.5 VBE (sat) Base-Emitter Saturation Voltage IC=1A, IB=0.1A 1.2 fT Current Gain Band Width Product VCE=6V, IC=10mA 130 MHz Cob Output Capacitance VCB=6V, IE=0, f=1MHz 16 pF V 0.1 120 µA 400 V V hFE Classification Classification Y G hFE 120 ~ 240 200 ~ 400 ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 KSD1021 Typical Characteristics 1.0 1000 VCE = 1V IB = 5.0mA IB = 4.5mA IB = 4.0mA 0.8 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 0.9 IB = 3.5mA 0.7 IB = 3.0mA 0.6 IB = 2.5mA 0.5 IB = 2.0mA 0.4 IB = 1.5mA 0.3 IB = 1.0mA 0.2 100 10 IB = 0.5mA 0.1 0.0 1 0 1 2 3 4 5 6 7 8 9 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 100 f=1MHz IE=0 1 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 VBE(sat) 0.1 VCE(sat) 0.01 10 1 1 10 100 1000 1 10 IC[mA], COLLECTOR CURRENT 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance : 1000 500 450 PC[mW], POWER DISSIPATION fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VCE = 6V 100 10 1 400 350 300 250 200 150 100 50 0 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2004 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 200 225 250 o Ta[ C], AMBIENT TEMPERATURE Figure 6. Power Derating Rev. B1, April 2004 KSD1021 Package Dimensions TO-92S 4.00 ±0.20 (1.10) 3.70 ±0.20 2.31 ±0.20 14.47 ±0.30 0.66 MAX. 0.49 ±0.10 1.27TYP [1.27±0.20] 1.27TYP [1.27±0.20] +0.10 0.35 –0.05 2.86 ±0.20 0.77 ±0.10 3.72 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I10