FAIRCHILD KSB1121

KSB1121
KSB1121
High Current Driver Applications
•
•
•
•
Low Collector-Emitter Saturation Voltage
Large Current Capacity and Wide SOA
Fast Switching Speed
Complement to KSD1621
SOT-89
1
1. Base 2. Collector 3. Emitter
PNP Epitaxial Planar Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
-30
Units
V
VCEO
VEBO
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-6
V
IC
Collector Current
-2
A
PC
PC*
Collector Power Dissipation
500
1.3
mW
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
* Mounted on Ceramic Board (250mm2 x 0.8mm)
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -10µA, IE= 0
Min.
-30
Typ.
Max.
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC= -1mA, IB= 0
-25
BVEBO
Emitter-Base Breakdown Voltage
IE= -10µA, IC= 0
-6
ICBO
Collector Cut-off Current
VCB= -20V, IE=0
IEBO
Emitter Cut-off Current
VBE= -4V, IC= 0
hFE1
hFE2
DC Current Gain
VCE= -2V, IC= -0.1A
VCE= -2V, IC= -1.5A
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -1.5A, IB= -75mA
-0.35
-0.6
VBE (sat)
Base-Emitter Saturation Voltage
IC= -1.5A, IB= -75mA
-0.85
-1.2
fT
Current Gain Bandwidth Product
VCE= -10V, IC= -50mA
150
MHz
V
V
100
65
-100
nA
-100
nA
560
V
V
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
32
pF
tON
* Turn On Time
60
ns
tSTG
* Storage Time
tF
* Fall time
VCC= -12V, VBE = -5V
IB1=-IB2=-25mA
IC= -500mA, RL=24Ω
350
ns
25
ns
* Pulse Test: PW≤20µs, Duty Cycle≤1%
hFE Classification
Classification
R
S
T
U
hFE1
100 ~ 200
140 ~ 280
200 ~ 400
280 ~ 560
Marking
SZX
hFE Grade
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSB1121
Typical Characteristics
1000
IB = -200mA IB = -100mA IB = -50mA IB = -30mA
IB = -20mA
-1.6
IB = -10mA
IB = -8mA
-1.2
IB = -6mA
-0.8
IB = -4mA
IB = -2mA
-0.4
VCE= -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-2.0
100
10
IB = 0
0.0
0.0
-0.2
-0.4
-0.6
-0.8
1
-0.01
-1.0
-0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1
-10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-3.2
-10
VCE = -2V
VCE(sat)[V], SATURATION VOLTAGE
IC = 10 IB
IC[A], COLLECTOR CURRENT
-2.8
-1
-0.1
-0.01
-0.01
-0.1
-1
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
0.0
-10
-0.2
IC[A], COLLECTOR CURRENT
1000
Cob[pF], CAPACITANCE
IE=0
f = 1MHz
100
10
-1
-10
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2001 Fairchild Semiconductor Corporation
-0.6
-0.8
-1.0
-1.2
-100
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 3. Collector-Emitter Saturation Voltage
1
-0.1
-0.4
VBE[V], BASE-EMITTER VOLTAGE
1000
VCE = -10V
100
10
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A1, June 2001
KSB1121
Package Demensions
SOT-89
1.50 ±0.20
4.50 ±0.20
(0.40)
4.10
(1.10)
2.50
±0.20
C0.2
±0.20
(0.50)
1.65 ±0.10
0.50 ±0.10
0.40 ±0.10
0.40 +0.10
–0.05
1.50 TYP 1.50 TYP
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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intended to be an exhaustive list of all such trademarks.
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MicroFET™
MICROWIRE™
OPTOLOGIC™
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POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
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UHC™
UltraFET®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3