KSB1121 KSB1121 High Current Driver Applications • • • • Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSD1621 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Planar Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -30 Units V VCEO VEBO Collector-Emitter Voltage -25 V Emitter-Base Voltage -6 V IC Collector Current -2 A PC PC* Collector Power Dissipation 500 1.3 mW W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -10µA, IE= 0 Min. -30 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB= 0 -25 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC= 0 -6 ICBO Collector Cut-off Current VCB= -20V, IE=0 IEBO Emitter Cut-off Current VBE= -4V, IC= 0 hFE1 hFE2 DC Current Gain VCE= -2V, IC= -0.1A VCE= -2V, IC= -1.5A VCE (sat) Collector-Emitter Saturation Voltage IC= -1.5A, IB= -75mA -0.35 -0.6 VBE (sat) Base-Emitter Saturation Voltage IC= -1.5A, IB= -75mA -0.85 -1.2 fT Current Gain Bandwidth Product VCE= -10V, IC= -50mA 150 MHz V V 100 65 -100 nA -100 nA 560 V V Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 32 pF tON * Turn On Time 60 ns tSTG * Storage Time tF * Fall time VCC= -12V, VBE = -5V IB1=-IB2=-25mA IC= -500mA, RL=24Ω 350 ns 25 ns * Pulse Test: PW≤20µs, Duty Cycle≤1% hFE Classification Classification R S T U hFE1 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 Marking SZX hFE Grade ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB1121 Typical Characteristics 1000 IB = -200mA IB = -100mA IB = -50mA IB = -30mA IB = -20mA -1.6 IB = -10mA IB = -8mA -1.2 IB = -6mA -0.8 IB = -4mA IB = -2mA -0.4 VCE= -2V hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -2.0 100 10 IB = 0 0.0 0.0 -0.2 -0.4 -0.6 -0.8 1 -0.01 -1.0 -0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -3.2 -10 VCE = -2V VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB IC[A], COLLECTOR CURRENT -2.8 -1 -0.1 -0.01 -0.01 -0.1 -1 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.0 -10 -0.2 IC[A], COLLECTOR CURRENT 1000 Cob[pF], CAPACITANCE IE=0 f = 1MHz 100 10 -1 -10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2001 Fairchild Semiconductor Corporation -0.6 -0.8 -1.0 -1.2 -100 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Collector-Emitter Saturation Voltage 1 -0.1 -0.4 VBE[V], BASE-EMITTER VOLTAGE 1000 VCE = -10V 100 10 -0.1 -1 -10 IC[A], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A1, June 2001 KSB1121 Package Demensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3