www.fairchildsemi.com KA5H0380R/KA5M0380R/KA5L0380R SPS Features Description • • • • • • • • • The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loopcompensation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. Precision fixed operating frequency (100/67/50kHz) Low start-up current(typ. 100uA) Pulse by pulse current limiting Over current protection Over voltage protecton (Min. 25V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Auto-restart mode TO-220F-4L 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram Vcc INTERNAL BIAS 5V Vref UVLO DRAIN SFET GOOD LOGIC OSC 9V 5 uA S Q 1 mA R _ FB 2.5R 1R 7.5V + + _ L.E.B Rsens S R 27V + _ Q GND THERMAL S/D POWER ON RESET Rev. .5.0 ©2000 Fairchild Semiconductor International KA5H0380R/KA5M0380R/KA5L0380R Absolute Maximum Ratings Characteristic Symbol Value Unit VDSS 800 V VDGR 800 V VGS ±30 V IDM 12 ADC EAS 95 mJ IAS 10 A Continuous drain current (TC=25°C) ID 3.0 ADC Continuous drain current (TC=100°C) ID 2.1 ADC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to VSD V PD (watt H/S) 35 W Derating 0.28 W/°C Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C Drain-source (GND) voltage (1) Drain-Gate voltage (RGS=1MΩ) Gate-source (GND) voltage Drain current pulsed (2) Single pulsed avalanche energy (3) Avalanche current (4) Total power dissipation Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, starting Tj=25°C 4. L=13µH, starting Tj=25°C 2 KA5H0380R/KA5M0380R/KA5L0380R Electrical Characteristics (SFET part) (Ta = 25°C unless otherwise specified) Characteristic Symbol Drain-source breakdown voltage Zero gate voltage drain current Static drain-source on resistance (note) Forward transconductance (note) Input capacitance Min. Typ. Max. Unit VGS=0V, ID=50µA 800 − − V VDS=Max., Rating, VGS=0V − − 250 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C − − 1000 µA RDS(ON) VGS=10V, ID=0.5A − 4 5 Ω gfs VDS=50V, ID=0.5A 1.5 2.5 − S − 779 − − 75.6 − − 24.9 − − 40 − − 95 − − 150 − − 60 − − − 34 − 7.2 − − 12.1 − BVDSS IDSS Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time Fall time Test condition tr td(off) tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) pF nS nC Note: Pulse test: Pulse width < 300µS, duty < 2% 1 S = ---R 3 KA5H0380R/KA5M0380R/KA5L0380R Electrical Charcteristics (SFET part) (Continued) (Ta = 25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit 4.80 5.00 5.20 V −25°C≤Ta≤+85°C − 0.3 0.6 mV/°C REFERENCE SECTION Output voltage (1) Temperature Stability Vref (1)(2) Vref/∆T Ta=25°C OSCILLATOR SECTION Initial accuracy FOSC KA5H0380R 90 100 110 kHz Initial accuracy FOSC KA5M0380R 61 67 73 kHz Initial accuracy FOSC KA5L0380R 45 50 55 kHz −25°C≤Ta≤+85°C − ±5 ±10 % Frequency change with temperature (2) PWM SECTION Maximum duty cycle Dmax KA5H0380R 62 67 72 % Maximum duty cycle Dmax KA5M0380R KA5L0380R 72 77 82 % Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA 4 5 6 µA 1.89 2.15 2.41 A 8.4 9 9.6 V After turn on 14 15 16 V VCC=14V − 0.1 0.17 mA IOPR VCC<28 − 7 12 VSD Vfb>6.5V 6.9 7.5 8.1 V 140 160 − °C 25 27 29 V FEEDBACK SECTION Feedback source current IFB Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD OVER CURRENT PROTECTION SECTION Over current protection IL(max) Max. inductor current UVLO SECTION Start threshold voltage Vth(H) Minimum operating voltage Vth(L) − TOTAL STANDBY CURRENT SECTION Start current IST Operating supply current (control part only) mA SHUTDOWN SECTION Shutdown Feedback voltage Thermal shutdown temperature (Tj) Over voltage protection (1) − TSD VOVP VCC>24V NOTE: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 4 KA5H0380R/KA5M0380R/KA5L0380R Typical Performance Characteristics 101 VGS Top: 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V ID, Drain Current [A] ID, Drain Current [A] 101 100 100 150oC @Notes: 1. 300µ s Pulse Test 2. TC = 25oC 10-1 100 25oC 10-1 101 8 10 Figure 1. Output Characteristics Figure 2. Thansfer Characteristics Fig3. On-Resistance vs. Drain Current 10 Vgs=10V IDR, Reverse Drain Current [A] RDS(on) , [Ω ] 6 VGS, Gate-Source Voltage [V] 7 Drain-Source On-Resistance 4 VDS, Drain-Source Voltage [V] 8 6 5 Vgs=20V 4 3 2 1 0 2 @Notes: 1. VDS = 30 V 2. 300µ s PulseTest -25oC 1 25oC 150oC @Notes: 1. VGS = 0V 2. 300µ s Pulse Test @Note : Tj=25℃ 0 1 2 3 0.1 0.4 4 0.6 Figure 3. On-Resistance vs. Drain Current 0.8 1.0 VSD, Source-Drain Voltage [V] ID,Drain Current Figure 4. Source-Drain Diode Forward Voltage 1000 Ciss = Cgs + Cgd (Cds = shorted) 800 Coss = Cds + Cgd Crss = Cgd Capacitance [pF] 700 600 Ciss 500 400 300 200 Coss 100 Crss 0 100 10 VGS,Gate-Source Voltage[V] 900 VDS=160V VDS=400V 8 VDS =640V 6 4 2 @Note : ID=3.0A 101 VDS, Drain-Source Voltage [V] Figure 5. Capacitance vs. Drain-Source Voltage 0 0 5 10 15 20 25 30 QG,Total Gate Charge [nC] Figure 6. Gate Charge vs. Gate-Source Voltage 5 KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (continued) 2.5 2.0 RDS(on), (Normalized) 1.1 1.0 @ Notes : 1. VGS = 0V 0.9 2. ID = 250µA 0.8 -50 0 50 100 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.5 1.0 2. ID = 1.5 A 0.0 150 @ Notes: 1. VGS = 10V 0.5 -50 Figure 7. Breakdown Voltage vs. Temperature 150 3.0 101 10 µ s 2.5 100 µ s ID, Drain Current [A] ID , Drain Current [A] 100 3.5 Operation in This Area is Limited by R DS(on) 1 ms 10 ms DC 100 @ Notes : 1. TC = 25 oC 10-1 o 2. TJ = 150 C 3. Single Pulse 101 2.0 1.5 1.0 0.5 -2 102 0.0 103 40 Thermal Response Figure 9. Max. Safe Operating Area θ Z J C(t) , 60 80 100 D=0.5 @ Notes : 1. Zθ J C (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) 0.2 0.1 0.05 0.02 0.01 10- 2 - 5 10 single pulse 10- 4 140 Figure 10. Max. Drain Current vs. Case Temperature 100 10- 1 120 TC, Case Temperature [oC] VDS , Drain-Source Voltage [V] 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration Figure 11. Thermal Response 6 50 Figure 8. On-Resistance vs. Temperature 102 10 0 TJ, Junction Temperature [oC] T J, Junction Temperature [oC] 100 [sec] 101 KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (control part) (These characteristic graphs are normalized at Ta = 25°C) Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Figure 1. Operating Frequency Fig.3 Operating Current 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 25 50 75 100 125 150 Figure 2. Feedback Source Current 1.1 Fig.4 Max Inductor Current Ipeak 1 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Figure 4. Max Inductor Current Fig.5 Start up Current Fig.6 Start Threshold Voltage 1.15 1.1 1.3 1.05 1.1 Istart Vstart 1 0.9 0.95 0.7 0.5 -25 0 1.05 Figure 3. Operating Current 1.5 Fig.2 Feedback Source Current 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0.9 0 25 50 75 100 125 150 Figure 5. Start up Current 0.85 -25 0 25 50 75 100 125 150 Figure 6. Start Threshold Voltage 7 KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (continued) (These characteristic graphs are normalized at Ta = 25°C) Fig.7 Stop Threshold Voltage 1.15 Fig.8 Maximum Duty Cycle 1.15 1.1 1.1 1.05 1.05 Vstop 1 Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 100 125 150 Figure 7. Stop Threshold Voltage 0.85 -25 50 75 100 125 150 Fig.10 Shutdown Feedback Voltage 1.15 1.1 1.05 Vsd 1 0.95 0.9 0 25 50 75 100 125 150 Figure 9. VCC Zener Voltage 0.85 -25 0 25 50 75 100 125 150 Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 0 25 50 75 100 125 150 Figure 11. Shutdown Delay Current 8 25 Figure 8. Maximum Duty Cycle Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 0 0.85 -25 0 25 50 75 100 125 150 Figure 12. Over Voltage Protection KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (continued) (These characteristic graphs are normalized at Ta = 25°C) Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on Resistance 1.15 2.5 1.1 2 1.05 1 1.5 0.95 Rdson 1 0.9 0.5 Vss 0.85 -25 0 25 50 75 100 125 Figure13. Soft Start Voltage 150 0 -25 0 25 50 75 100 125 150 Figure 14. Drain Source Turn-on Resistance 9 KA5H0380R/KA5M0380R/KA5L0380R Package Dimensions TO-220F-4L 10 KA5H0380R/KA5M0380R/KA5L0380R Package Dimensions (Continued) TO-220F-4L (Forming) 11 KA5H0380R/KA5M0380R/KA5L0380R Ordering Information Product Number Package KA5H0380R-TU TO-220F-4L KA5H0380R-YDTU TO-220F-4L(Forming) KA5M0380R-TU TO-220F-4L KA5M0380R-YDTU TO-220F-4L(Forming) KA5L0380R-TU TO-220F-4L KA5L0380R-YDTU TO-220F-4L(Forming) TU : Non forming Type YDTU :forming Type 12 Rating Operating Temperature 800V, 3A -25°C to +85°C 800V, 3A -25°C to +85°C 800V, 3A -25°C to +85°C KA5H0380R/KA5M0380R/KA5L0380R 13 KA5H0380R/KA5M0380R/KA5L0380R LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 7/24/00 0.0m 001 Stock#DSxxxxxxxx 2000 Fairchild Semiconductor International