KA5H0265R S P S S P S TO -22 0F -4L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turnoff driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. 1. GND 2. Drain 3. Vcc 4. FB ORDERING INFORMATION FEATURES • Precision fixed operating frequency (100kHz) • Pulse by pulse current limiting • Over current protection • Over voltage protection (Min. 25V) • Internal thermal shutdown function • Under voltage lockout • Internal high voltage sense FET • Auto-restart mode Device Package Topr (°°C) KA5H0265R TO-220F-4L −25°C to +85°C BLOCK DIAGRAM DRAIN uA 7.5V THERMAL S/D ! REV. B 1999 Fairchild Semiconductor Corporation KA5H0265R S P S ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Drain-source (GND) voltage (1) VDSS 650 V Drain-Gate voltage (RGS=1MΩ) VDGR 650 V Gate-source (GND) voltage VGS ±30 V IDM 8.0 ADC EAS 68 mJ IAS 8 A Continuous drain current (TC=25°C) ID 2.0 ADC Continuous drain current (TC=100°C) ID 1.3 ADC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to VSD V Total power dissipation PD (wt H/S) 42 W 0.33 W/°C Drain current pulsed (2) Single pulsed avalanche energy (3) Avalanche current (4) Derating Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C NOTES: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, starting Tj=25°C 4. L=13uH, starting Tj=25°C KA5H0265R S P S ELECTRICAL CHARACTERISTICS (SFET part) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit 650 − − V Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C − − 200 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A − 5.0 6.0 Ω Forward transconductance (note) gfs VDS=50V, ID=0.5A 1.5 2.5 − S Input capacitance Ciss − 550 − pF Output capacitance Coss VGS=0V, VDS=25V, f=1MHz − 38 − Reverse transfer capacitance Crss − 17 − Turn on delay time td(on) − 20 − Rise time tr − 15 − Turn off delay time td(off) − 55 − Fall time tf − 25 − Total gate charge (gate-source+gate-drain) Qg − − 35 Gate-source charge Qgs − 3 − Gate-drain (Miller) charge Qgd − 12 − NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) nS nC KA5H0265R S P S ELECTRICAL CHARACTERISTICS (Control part) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit 4.80 5.00 5.20 V REFERENCE SECTION Output voltage (1) Vref Ta=25°C Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C − 0.3 0.6 mV/°C FOSC Ta=25°C 90 100 110 kHz ∆F/∆T −25°C≤Ta≤+85°C − ±5 ±10 % 64 67 70 % OSCILLATOR SECTION Initial accuracy Frequency change with temperature (2) PWM SECTION Maximum duty cycle − Dmax FEEDBACK SECTION Feedback source current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA 1.05 1.2 1.35 A 14 15 16 V 8.4 9 9.6 V OVER CURRENT PROTECTION SECTION IL(max) Over current protection Max. inductor current UVLO SECTION − Start threshold voltage Vth(H) Minimum operating voltage Vth(L) After turn on Start current IST VCC=14V − 100 170 mA Operating supply current (control part only) IOPR VCC<28 − 7 12 mA VSD Vfb>6.5V 6.9 7.5 8.1 V 140 160 − °C 25 27 29 V TOTAL STANDBY CURRENT SECTION SHUTDOWN SECTION Shutdown Feedback voltage Thermal shutdown temperature (Tj) Over voltage protection (1) − TSD VOVP VCC>24V NOTES: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process KA5H0265R LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 12/28/99 0.0m 001 Stock#DSxxxxxxxx 1999 Fairchild Semiconductor Corporation