MITSUBISHI HYBRID ICs M57962L HYBRID IC FOR DRIVING IGBT MODULES Hybrid Integrated Circuit For Driving IGBT Modules Block Diagram 4 VCC Detect Circuit 14 Description: M57962L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates as an isolation amplifier for these modules and provides the required electrical isolation between the input and output with an opto-coupler. Short circuit protection is provided by a built in desaturation detector. A fault signal is provided if the short circuit protection is activated. 1 Detect Pin 185Ω Timer and Reset Circuit Interface 5 VOUT – Gate Shutdown Circuit 13 8 Fault Output Opto-Coupler 6 VEE Outline Drawing Dimensions in mm 51.0 MAX 25.0 MAX Features: u Built in high CMRR optocoupler (VCMR : Typical 30kV/µs, Min. 15kV/µs) 4.5 ± 1.5 0.35 ± 0.2 0.55 ± 0.2 12.5 MAX 1 u Electrical Isolation between input and output with opto-couplers (Viso = 2500, VRMS for 1 min.) 12.0 MAX 2.54 2.54 × 13 = 33.02 6.5 MAX 4.5 MAX 8.5 MAX 14 Test Circuit R u TTL compatible input interface 4.7 kΩ VIN u Two supply drive topology 8 D1 1 VOUT DZ1 30V tr tf 90% 5 Rext 4 VIN + 47µF + + 47µF + 14 13 TTL, etc. VIN = 5V 6 10% 0 VCC VEE tPLH VCC = 15 V VEE = 10V u Built in short circuit protection circuit with a pin for fault output tPHL Application: To drive IGBT modules for inverter, AC Servo systems, UPS, CVCF inverter, and welding applications. Rext = RECOMMENDED VALUE Recommended Modules: VCES = 600V Series (up to 400A Class) VCES = 1200V Series (up to 200A Class) VCES = 1400V Series (up to 200A Class) Sep.1998 MITSUBISHI HYBRID ICs M57962L HYBRID IC FOR DRIVING IGBT MODULES Absolute Maximum Ratings, Ta = 25°C unless otherwise specified Item Supply Voltage* Symbol Test Conditions Limit Units VCC VEE DC 18 Volts DC -15 Volts Input Voltage VI -1 ~ 7 Volts Output Voltage VO Output Voltage “H” VCC Volts Output Current IOHP Pulse Width 2µs, f = 20kHz -5 Amperes IOLP Pulse Width 2µs, f = 20kHz 5 Amperes Output Current Isolation Voltage Junction Temperature Operating Temperature IOH f = 20kHz, 50% Duty Cycle 0.5 Amperes VRMS Sinewave Voltage 60Hz, 1 min. 2500 Volts 85 °C (Differs from H/C Condition) -20 ~ 60 °C Tj Topr Storage Temperature tstg -25 ~ 100 °C Fault Output Current IFO 20 mA Input Voltage VR1 50 Volts *20 Volts ≤ VCC + VEE ≤ 28 Volts Electrical Characteristics, Ta = 25°C, VCC = 15V, -VEE = 10V unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Supply Voltage VCC Recommended Range 14 15 — Volts VEE Recommended Range -7 — -10 Volts VIN Recommended Range 4.75 5.00 5.25 Volts IIH VIN = 5V, R = 185Ω — 16 — mA 13 14 — Volts Pull-up Voltage on Input Side “H” Input Current “H” Output Voltage VOH “L” Output Voltage VOL Internal Power Dissipation PD f = 20kHz, -8 -9 — Volts — 2.38 — Watts Module 400A, 1200V IGBT “L-H” Propagation Time “L-H” Rise Time “H-L” Propagation Time “H-L” Rise Time Reset Time of Protection tPLH VI = 0 to 4V, Tj ± 85°C — 1.0 1.5 µs tr VI = 0 to 4V, Tj ± 85°C — 0.6 1.0 µs tPHL VI = 0 to 4V, Tj ± 85°C — 1.0 1.5 µs tr VI = 0 to 4V, Tj ± 85°C — 0.4 1.0 µs 1 — 2 ms tRESET Fault Output Current IFO — 5 — mA SC Voltage VSC 15 — — Volts Sep.1998