MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT Dimentions : mm OUTLINE DRAWING 83.0max 30.0max DESCRIPTION M57161L-01 is a hybrid IC designed to drive trenchgate IGBT module with built in RTC. This device can operate by an input of +15V because of electrical isolation between the input and output by an opto coupler,and the built in DC-DC converter isolated between a pair of positive/negative outputs for gate driving. With built in protection circuits,this devices can maintain a reverse bias for a predetermined time after the detection of an over current(short circuit). Therefore,the protective system operates with a margin of time. The over current(short circuit) detector functions with RTC circuit built in IGBT module to detect a drop of gate voltage. 6.0max 4.5max 11.0max 5.5max 15.0max 2.54×28=71.12 ➀ Recommend module ; IGBT module (F)series FEATURES ● Built in insulated DC-DC converter for IGBT drive ● Built in short circuit protection circuit ● Electrical isolation between input and output with opto-coupler (Vios=2500Vrms for 1minute) APPLICATION To drive IGBT module for inverter or AC servo systems application BLOCK DIAGRAM 19 VCC 1 VD VCC detect 2 Constant voltage circuit DC–AC converter Timer VGE error detect 28 29 3 4 VIN SC detect Gate detect 18 GND 22 390Ω 5 Interface 23 Vo Error out 6 Opto-coupler 24 27 Error out 17 VEE Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT ABSOLUTE MAXIMUM RATINGS Symbol VD VI Vo IOHP IOLP Viso Tc Topr Tstg IFO VR (Unless otherwise specified, Ta = 25°C) Parameter Applied between:5-6 At the output voltage “H” VD=15.7V Output current Pulse width 1µs, f≤20kHz Isolation voltage Case temperature Operating temperature Storage temperature Fault output current Applied 29 pin Sine-wave voltage 60Hz, 1min ELECTRICAL CHARACTERISTICS Symbol Input current 27pin Units V V V A A Vrms °C °C °C mA V (Ta = 25°C, VD = 15.0V, VIN = 5.0V, f = 20kHz, RG = 2.2Ω : CM600HU-24F) Parameter Test conditions VD VIN IIH f RG Supply voltage Pull-up voltage on input side “H” Input current Switching frequency Gate resistor Recommended range Recommended range Recommended range Recommended range Recommended range IIH VCC VEE VOH VOL t PLH tr t PHL tf t timer IFO tc td “H” Input current Gate + supply voltage Gate - supply voltage “H” Output voltage “L” Output voltage “L-H” Propagation time “L-H” Rise time “H-L” Propagation time “H-L” Fall time Timer Fault output current Controlled time detect delay time Short-circuit protect delay time Start voltage for protection at lower VCC Over-current detect voltage VIN=5V VIN=0V, f=0Hz VIN=0V, f=0Hz VCL VSC Ratings 16 –1 ~ +7 16.5 –7 7 2500 85 –20 ~ +60 –25 ~ +100 25 VCC Conditions Supply voltage Input voltages Output voltages IIH=10mA IIH=10mA IIH=10mA IIH=10mA Between start and cancel(Under input signal “L”) Applied 27pin R=470Ω In the rise time 29pin :11V, 28pin :open In the rise time 29pin :11V, 28pin :open The required minimum of positive power supply for gate when Vo is in the state of “H” Limits Min. 14.3 4.5 9 — 2.2 Typ. 15.0 5.0 10 — — — 17.0 –5.5 14 –4.0 — — — — 1.5 — — — 14.2 11.0 10 17.4 –6.5 15.5 –5.0 0.4 0.4 1.3 0.4 — 12 3.5 6.5 15.2 11.6 Max. 15.7 5.5 11 20 — — 17.8 –7.5 16.5 –6.0 1 0.5 2.0 0.5 2.5 — — — 16.2 12.2 Unit V V MA kHz Ω mA V V V V µs µs µs µs ms mA µs µs V V Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT APPLICATION CIRCUIT EXAMPLE 1 (Direct driving) 1 29 2 23 RG RTC 28 VD=15V±5% 3 VIN 470µF M57161L 19 -01 4 VIN=5V±5% CM600HU-24F Ctrip + VD + 18 5 2.2µF + 17 Control signal→ RG ≥ 2.2Ω Ctrip : Please refer to the next page 22 6 470µF 24 3.3kΩ 27 470Ω APPLICATION CIRCUIT EXAMPLE 2 (Additional transistor for output current) CM600HU-24F (Parallel connection) 4.7kΩ 1 29 2 23 Ro + Ctrip VD VD=15V±5% RG 28 3 4 M57161L 19 -01 RTC RTC RG Co + 22 Co+ VIN=5V±5% VIN 18 5 17 Control signal→ 6 24 27 470Ω The maximum switching frequency in this example : 10kHz + Co– 3.3Ω Ro hfe×RG/2 Ctrip : Please refer to the next page Co+, Co- : More than 1000µF (please use an electrolytic capacitor with ripple current admissible for output peak current) Co : A few µF The connection to decrease the peak of ripple current Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT OPERATION OF PROTECTION CIRCUIT VCC 19 28 Timer circuit VGE detect 29 GND 18 22 + 330µ Interface RG 23 24 Error out RTC + 330µF VEE 17 3.3k 27 470Ω FLOW CHART Start Detecting of short circuit Gate shutdown Operate timer start Output error sign No End of timer Yes No 1. The VGE error detect circuit operates when an input signal is in the state of “H”. 2. An error judgment is made when VGE becomes below VSC (=11v : min). 3. The VGE error detect circuit does not function until the time when the gate voltage reaches VSC (=12.2V : max). The tc (=3.5µs) of controlled time detect short circuit is set in order to ensure the turn-on of IGBT modules. 4. If a rise time of gate voltage is longer than 3.5µs, the tc can be adjusted by connecting a capacitor (Ctrip) between pins 28 and 18. Please refer to td vs. Ctrip CHARACTERISTICS on page 6/6. 5. The td is a delay time due to signal transmission of each protection circuit. 6. If short-circuit current flows at turn-on, the controlled time detect short circuit (td) is included to the td of short-circuit protect delay time. The td can be changed through Ctrip. As a gate shutdown of IGBT modules within 10 µs is recommended, Ctrip should be below 220pF in order to set the maximum of td below 10µs Input sign = “L” Yes Reset Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT CONTROL OF IGBT MODULE DRIVER The timing chart for control of IGBT module drivers with electrical isolation between the input and output is as follows. (1)Power supply applied (3)Occurrence of over-current or short-circuit current VG<11V (2)Normal function start (4) tc (6)Control signal "L" The protection circuit is cancelled. 3.5µs (VG≤11V) Error detect 3~6ms tc 3.5µs (5) Fault output 27 pin "L" level td 6.5µs ttimer 2.5ms VFO 11V VG Timing chart when protection circuit operates under over-current (short circuit) with power supply applied. DESCRIPTION OF TIMING CHART (1) When VCC is within 10 to 15 voltages, S/C detect output (VFO) is in the low state. The output vontage remains in the low state for 3 to 6 ms. If the power supply is applied in the high state of input signal, the output (Vo) remains in the low state. But VFO becomes in the low state for 3 to 6 ms. After normal function starts, if VCC is below the start voltage of protection circuit (Typ. 15.2V), VFO is low and Vo is low voltage for the same period. (2) After VFO returns to high level, control signal shoud be applied. (3) If over-current or short-circuit current flows between the collector and emitter of IGBT modules, the internal RTC circuit pulls the gate voltage down below 11V (4) When the turn-on of IGBT coincides with over-current or short-circuit current, the timer circuit functions after tc. (5) After td from the short-circuit or over-current, the output voltage of Vo is low and VFO is low voltage at the same time. The output remains low during the operating time of timer circuit regardless of input signals. (6) If the input signal is low level after ttimer, the protection function is cancelled. And then VFO returns to high voltage. Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT tPLH, tPHL vs. Ta CHARACTERISTICS (TYPICAL) 3.0 VD = 15V RG = 2.2Ω VIN = 5V LOAD : CM600HU-24F 2.5 2.0 tPHL 1.5 1.0 tPLH 0.5 0 –40 –20 0 20 40 60 80 PROPAGATION DELAY TIME "L-H"tPLH(µs) PROPAGATION DELAY TIME "H-L"tPHL(µs) PROPAGATION DELAY TIME "L-H"tPLH(µs) PROPAGATION DELAY TIME "H-L"tPHL(µs) CHARACTERISTICS CURVES 3.0 VD = 15V RG = 2.2Ω = 25°C 2.5 Ta LOAD : CM600HU-24F 2.0 tPHL 1.5 1.0 tPLH 0.5 0.0 3.0 4.0 5.0 6.0 AMBIENT TEMPERATURE Ta (°C) INPUT SIGNAL VOLTAGE VI (V) td vs. Ta CHARACTERISTICS (TYPICAL) td vs. Ctrip CHARACTERISTICS (TYPICAL) 7.0 14 14 VD = 15V VSC = 11V 12 SHORT–CIRCUIT PROTECTION DELAY TIME td (µs) SHORT–CIRCUIT PROTECTION DELAY TIME td (µs) tPLH, tPHL vs. VI CHARACTERISTICS (TYPICAL) 10 Ctrip = 100pF 8 6 Ctrip = 0 4 2 0 –40 –20 0 20 40 60 VD = 15V VSC = 11V 12 Ta = 25°C 10 8 6 4 2 0 80 0 100 200 300 400 500 AMBIENT TEMPERATURE Ta (°C) CONNECTIVE CAPACISTANCE Ctrip (pF), (Pin : 28-18) POWER DISSIPATION vs. AMBIENT TEMPERATURE (MAXIMUM RATING) 2.5 DISSIPATION CURRENT vs. SUPPLY VOLTAGE (TYPICAL) 120 DISSIPATION CURRENT (mA) POWER DISSIPATION PD (W) Ta = 25°C 2 1.5 1 0.5 0 0 20 40 60 80 AMBIENT TEMPERATURE Ta (°C) 100 INPUT SIGNAL "H" 100 80 INPUT SIGNAL "L" 60 40 20 0 12 13 14 15 16 17 SUPPLY VOLTAGE VD (V) Mar. 2002