KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter TC=25°C unless otherwise noted Parameter Value Units BVCBO Collector-Base Voltage 1200 V BVCEO Collector-Emitter Voltage 600 V BVEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP Collector Current (Pulse)** 4 A IB Base Current (DC) 1 A IBP Collector Current (Pulse)** 2 A PC Collector Dissipation(TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range - 65 ~ 150 °C EAS Avalanche Energy(Tj=25°C) 2.5 mJ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Value Units RθJC Thermal Resistance, Junction to Case 2.5 °C/W RθJA Thermal Resistance, Junction to Ambient 85 °C/W Ordering Information Part Number Marking Package Packing Method KSC5502TU J5502 TO-220 TUBE © 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 www.fairchildsemi.com 1 KSC5502 — NPN Planar Silicon Transistor April 2008 Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=1mA, IE=0 1200 1350 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 600 750 V BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 12 13.2 V ICES Collector Cut-off Current VCES=1200V, VBE=0 ICEO Collector Cut-off Current VCE=600V, IB=0 TC=25°C 100 TC=125°C 500 TC=25°C 100 TC=125°C 500 10 IEBO Emitter Cut-off Current VEB=12V, IC=0 TC=25°C hFE DC Current Gain VCE=1V, IC=0.2A TC=25°C 15 28 TC=125°C 8 27 TC=25°C 4 8.7 TC=125°C 3 6.6 TC=25°C 12 20 TC=125°C 6 16 VCE=1V, IC=1A VCE=2.5V, IC=0.5A VCE(sat) Collector-Emitter Saturation Voltage IC=0.2A, IB=0.02A IC=0.4A, IB=0.08A IC=1A, IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC=0.4A, IB=0.08A IC=1A, IB=0.2A µA µA µA 40 30 TC=25°C 0.09 0.8 V TC=125°C 0.13 1.1 V TC=25°C 0.08 0.6 V TC=125°C 0.12 1.0 V TC=25°C 0.19 1.5 V TC=125°C 0.35 3.0 V TC=25°C 0.77 1.0 V TC=125°C 0.65 0.9 V TC=25°C 0.83 1.2 V TC=125°C 0.70 1.0 V Cib Input Capacitance VEB=8V, IC=0, f=1MHz 410 500 pF Cob Output Capacitance VCB=10V, IE=0, f=1MHz 20 100 pF * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% © 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 www.fairchildsemi.com 2 KSC5502 — High Voltage Power Switch Mode Application Electrical Characteristics * TC=25°C unless otherwise noted Symbol VCE(DSAT) Parameter Dynamic Saturation Voltage Test Condition Min Typ. Max. Units IC=0.4A, IB1=80mA VCC=300V @ 1µs 11 V @ 3µs 8 V IC=1A, IB1=200mA VCC=300V @ 1µs 23 V @ 3µs 13 V RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s) tON tOFF tON tOFF Turn On Time IC=0.4A, IB1=80mA TC=25°C IB2=0.2A, VCC=300V TC=125°C RL = 750Ω Turn Off Time Turn On Time Turn Off Time 250 260 TC=25°C 3.3 TC=125°C 3.8 TC=25°C 220 TC=125°C 250 TC=25°C 4.3 TC=125°C 5.0 TC=25°C 1.4 TC=125°C 1.7 TC=25°C 130 TC=125°C 80 TC=25°C 210 TC=125°C 130 IC=0.8A, IB1=160mA TC=25°C IB2=160mA, TC=125°C VCC=300V LC=200uH TC=25°C 4.9 170 TC=125°C 340 TC=25°C 300 TC=125°C 810 IC=1A, IB1=160mA IB2=160mA, VCC=300V RL = 300Ω 350 ns ns 4.0 µs µs 450 ns ns 5.0 µs µs INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF tC tSTG tF tC Storage Time IC=0.4A, IB1=80mA IB2=0.2A, VZ=300V LC=200uH Fall Time Cross-over Time Storage Time Fall Time Cross-over Time © 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 2.0 µs µs 200 ns ns 350 ns ns 5.5 µs µs 5.3 250 ns ns 600 ns ns www.fairchildsemi.com 3 KSC5502 — High Voltage Power Switch Mode Application Electrical Characteristics TC=25°C unless otherwise noted 100 o 400mA 2 300mA 200mA IB=100mA 1 TJ=125 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE=1V 1A 900mA 800mA 700mA 600mA 500mA 3 o TJ=25 C 10 1 0 0 1 2 3 4 5 6 1 7 Figure 1. Static Characteristic 1000 IC=10IB 10 VCE(sat)(V), VOLTAGE VCE(sat)(V), VOLTAGE 100 Figure 2. DC current Gain IC=5IB 10 10 IC[mA], COLLECTOR CURRENT) VCE[V], COLLECTOR EMITTER VOLTAGE 1 o TJ=125 C 1 o TJ=125 C 0.1 0.1 o TJ=25 C o TJ=25 C 0.01 0.01 1 10 100 1 1000 10 100 1000 IC(mA), COLLECTOR CURRENT IC(mA), COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 2 o TJ=25 C IC=5IB 1.5A VBE[V], VOLTAGE VCE[V], VOLTAGE 2.0A 1.0A 1 0.4A IC=0.2A 0 1 10 100 o TJ=25 C o TJ=125 C 0.1 1k 1 IB[mA], BASE CURRENT 10 100 1k IC[mA], COLLECTOR CURRENT Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Voltage © 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 1 www.fairchildsemi.com 4 KSC5502 — High Voltage Power Switch Mode Application Typical Characteristics 1000 900 800 IC=10IB 700 600 IC=5IB1=2IB2 VCC=300V PW=20us 1 tON[ns],TIME VBE[V], VOLTAGE 500 o TJ=25 C o TJ=125 C 400 300 o TJ=125 C 200 o TJ=25 C 100 0.3 0.1 1 10 100 1k 0.4 Figure 7. Base-Emitter Saturation Voltage 0.6 0.7 0.8 0.9 1 2 3 Figure 8. Resistive Switching Time, ton 5 1000 900 4.5 800 4 IC=5IB1=2IB2 VCC=300V PW=20us 3.5 700 600 IC=5IB1=5IB2 VCC=300V PW=20us 500 2.5 tON[ns],TIME 3 tOFF(us),TIME 0.5 IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT o TJ=125 C 2 o 400 300 o TJ=125 C TJ=25 C 200 1.5 o TJ=25 C 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 100 0.3 3 0.4 IC[A], COLLECTOR CURRENT 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[A], COLLECTOR CURRENT Figure 9. Resistive Switching Time, toff Figure 10. Resistive Switching Time, ton 6 9 5 8 IC=5IB1=5IB2 VCC=300V PW=20us 7 4 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C 5 tSTG(us),TIME tOFF(us),TIME 6 o TJ=125 C 4 o TJ=25 C 3 2 o TJ=25 C 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 1 0.3 3 IC[A], COLLECTOR CURRENT 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[A], COLLECTOR CURRENT Figure 11. Resistive Switching Time, toff Figure 12. Inductive Switching Time, tSTG © 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 0.4 www.fairchildsemi.com 5 KSC5502 — High Voltage Power Switch Mode Application Typical Characteristics (Continued) 400 tF(ns),TIME 200 600 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH 500 o TJ=25 C 100 90 80 70 400 tC[ns],TIME 300 o TJ=125 C 60 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH o TJ=25 C 300 o 200 TJ=125 C 50 40 30 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 100 0.3 3 0.4 IC[A], COLLECTOR CURRENT Figure 13. Inductive Switching Time, tF 7 6 2 3 2000 IC=5IB1=5IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C 1000 900 800 700 600 5 IC=5IB1=5IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C 500 4 tF(ns),TIME tSTG(us),TIME 0.6 0.7 0.8 0.9 1 Figure 14. Inductive Switching Time, tc 10 9 8 0.5 IC[A], COLLECTOR CURRENT o TJ=25 C 3 400 300 200 o TJ=25 C 2 100 90 80 70 60 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 50 0.3 3 0.4 Figure 15. Inductive Switching Time, tSTG 2 3 5 o IC=5IB1=5IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C 4 1000 900 800 700 600 500 tSTG, TIME[us] tC[ns],TIME 2000 0.6 0.7 0.8 0.9 1 Figure 16. Inductive Switching Time, tF 4000 3000 0.5 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT o TJ=25 C 400 TJ=25 C IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C IC=0.8A 3 2 300 1 200 100 0.3 0 0.4 0.5 0.6 0.7 0.8 0.9 1 2 10 3 11 12 hFE, FORCED GAIN @ VCE=1V & IC=0.8A IC[A], COLLECTOR CURRENT Figure 17. Inductive Switching Time, tc Figure 18. Inductive Switching Time, tSTG © 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 IC=0.4A www.fairchildsemi.com 6 KSC5502 — High Voltage Power Switch Mode Application Typical Characteristics (Continued) KSC5502 — High Voltage Power Switch Mode Application Typical Characteristics (Continued) 500 300 o o 250 TJ=25 C IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=25 C IC=5IB1=2IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C 400 o TJ=125 C 200 tC, TIME[ns] tF, TIME[ns] IC=0.8A 150 IC=0.4A 100 300 IC=0.8A 200 IC=0.4A 100 50 0 0 10 11 10 12 11 12 hFE, FORCED GAIN @ VCE=1V & IC=0.8A hFE, FORCED GAIN @ VCE=1V & IC=0.8A Figure 19. Inductive Switching Time, tF Figure 20. Inductive Switching Time, tc 60 1000 F=1MHz 50 PC[W], POWER DISSIPATION CAPACITANCE[pF] Cib 100 Cob 10 40 30 20 10 0 0 1 1 10 100 100 150 200 o REVERSE VOLTAGE[V] Figure 21. Capacitance Figure 22. Power Derating © 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 50 TC( C), CASE TEMPERATURE www.fairchildsemi.com 7 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation KSC5502 Rev. A1 www.fairchildsemi.com 8 KSC5502 High Voltage Power Switch Mode Application TRADEMARKS