FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) * 3 A IB Base Current (DC) 0.75 A IBP Base Current (Pulse) * 1.5 A PC Collector Power Dissipation (TC = 25°C) 1.1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% ©2005 Fairchild Semiconductor Corporation FJN3303 Rev. D 1 www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor May 2005 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 500µA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 ICBO Collector Cut-off Current VCB = 700V, IE = 0 9 V 10 µA 10 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 1.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A 1.0 1.2 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A tON Turn On Time tSTG Storage Time tF Fall Time VCC = 125V, IC = 1A IB1 = - IB2 = -0.2A RL = 125Ω Thermal Characteristics Symbol 14 5 23 4 MHz 1.1 µs 4.0 µs 0.7 µs TC = 25°C unless otherwise noted Parameter Rating Units RθJC Thermal Resistance Junction-Case 48 °C/W RθJA Thermal Resistance Junction-Ambient 125 °C/W FJN3303 Rev. D 2 www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain 1.6 100 VCE = 2V IB = 120 mA 1.0 0.8 IB = 40 mA 0.6 IB = 20 mA 0.4 o Ta = - 25 C o Ta = 25 C 10 0.2 0.0 0 1 2 3 4 5 6 7 8 9 1 1E-3 10 0.01 0.1 1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 o Ta = 125 C IC = 4 IB o Ta = 25 C 1 o Ta = - 25 C 0.1 0.01 0.01 0.1 IC = 4 IB o Ta = 75 C VBE(sat) [V], SATURATION VOLTAGE 10 VCE(sat) [V], SATURATION VOLTAGE o Ta = 75 C o Ta = 125 C 1.2 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 1.4 1 o o 1 o Ta = 125 C 0.1 0.01 10 Ta = 25 C Ta = - 25 C o Ta = 75 C 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Resistive Load Switching Time 10 tSTG & tF [µ s], SWITCHING TIME tSTG & tF [µ s], SWITCHING TIME 10 tSTG 1 tF 0.1 IB1 = - IB2 = 0.2A VCC = 125V 0.01 0.1 1 tF 0.1 IB1 = 120mA, IB2 = - 40mA VCC = 310V 0.01 0.1 1 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT FJN3303 Rev. D tSTG 3 www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Forward Biased Safe Operating Area Figure 8. Reverse Biased Safe Operating Area 10 10 IC [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT IC (DC) 1 0.1 0.01 o TC = 25 C Single Pulse 1E-3 0.1 1 IB1 = 1A, RB2 = 0 VCC = 50V, L =1 mH 1 10 100 0.1 100 1000 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating PC [W], COLLECTOR POWER DISSIPATION 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175 o Ta [ C], AMBIENT TEMPERATURE FJN3303 Rev. D 4 www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics FJN3303 High Voltage Fast-Switching NPN Power Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] (0.25) +0.10 0.38 –0.05 0.38 –0.05 ±0.20 3.86MAX 3.60 1.02 ±0.10 +0.10 1.27TYP [1.27 ±0.20] (R2.29) Dimensions in Millimeters FJN3303 Rev. D 5 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 6 FJN3303 Rev. D www.fairchildsemi.com FJN3303 High Voltage Fast-Switching NPN Power Transistor TRADEMARKS