FJAF6820 FJAF6820 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1500V • Low Saturation Voltage : VCE(sat) = 3V (Max.) • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Rating 1500 Units V 750 V 6 V IC Collector Current (DC) 20 A ICP* Collector Current (Pulse) 30 A PC Collector Dissipation 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Conditions VCB=1400V, RBE=0 Min. Typ. ICBO Collector Cut-off Current VCB=800V, IE=0 10 µA IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA BVCBO Collector-Base Breakdown Voltage IC=500µA, IE=0 1500 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 750 V BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V hFE1 hFE2 hFE3 DC Current Gain VCE=5V, IC=1A VCE=5V, IC=8.5A VCE=5V, IC=11A 8 6 5.5 Max. 1 Units mA 10 8.5 VCE(sat) Collector-Emitter Saturation Voltage IC=11A, IB=2.75A 3 V VBE(sat) Base-Emitter Saturation Voltage IC=11A, IB=2.75A 1.5 V tSTG* Storage Time tF* Fall Time VCC=200V, IC=10A, RL=20Ω IB1=2.0A, IB2= - 4.0A 0.15 3 µs 0.2 µs * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case ©2002 Fairchild Semiconductor Corporation Typ Max 2.08 Units °C/W Rev. A, September2002 FJAF6820 Typical Characteristics 14 VCE = 5V IB=1.8A IB=1.6A IB=1.4A IB=1.2A 10 IB=1.0A 8 IB=0.8A IB=0.6A 6 IB=0.4A 4 IB=0.2A 0 hFE, DC CURRENT GAIN 12 IC [A], COLLECTOR CURRENT 100 IB=2.0A Ta = 125 C 0 Ta = 25 C 10 0 Ta = - 25 C 2 0 0 2 4 6 8 10 1 0.1 12 Figure 1. Static Characteristics 100 Figure 2. DC Current Gain 10 10 IC = 5 IB VCE(sat) [V], SATURATION VOLTAGE IC = 3 IB VCE(sat) [V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE 0 Ta = 125 C 1 0 Ta = 25 C 0 Ta = - 25 C 0.1 0.01 0.1 1 10 1 0 Ta = 25 C 0 Ta = 125 C 0 Ta = - 25 C 0.1 0.01 0.1 100 IC[A], COLLECTOR CURRENT 1 10 100 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 10 16 tSTG & tF [µ s], SWITCHING TIME VCE = 5V 14 IC[A], COLLECTOR CURRENT 1 12 10 8 6 0 125 C 4 2 0.2 0.4 0.6 1 tF 0.1 - 25 C 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation IB1 = 2A, VCC = 200V IC = 10A 0 0 25 C 0 0.0 tSTG 1.2 0.01 0.1 1 10 100 IB2 [A], REVERSE BASE CURRENT Figure 6. Resistive Load Switching Time Rev. A, September2002 FJAF6820 Typical Characteristics (Continued) 10 10 IB1 = 2A, IB2 = - 4A VCC = 200V tF & TSTG [µ s], SWITCHING TIME tSTG & tF [µs], SWITCHING TIME IB2 = - 4A, VCC = 200V IC = 10A tSTG 1 tF 0.1 1 tSTG 1 tF 0.1 1 10 10 IC [A], COLLECTOR CURRENT IB1 [A], FORWARD BASE CURRENT Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time 40 100 IC (Pulse) t = 100ms t = 10ms RB2 = 0, IB1 = 15A VCC = 30V, L = 200µH 35 IC [A], COLLECTOR CURRENT t = 1ms IC [A], COLLECTOR CURRENT 100 IC (DC) 10 1 0.1 o TC = 25 C Single Pulse 25 20 15 VBE(off) = - 6V 10 5 VBE(off) = - 3V 0.01 1 30 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area PC [W], POWER DISSIPATION 80 60 40 20 0 0 25 50 75 100 125 150 175 O TC [ C], CASE TEMPERATURE Figure 11. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A, September2002 FJAF6820 Package Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 14.50 ±0.20 0.85 ±0.03 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, September2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1