MITSUBISHI SEMICONDUCTOR <GaAs digital IC> 2.5Gb/s LASER DRIVER PRELIMINARY ML0131 Notice : This is not a final specification Some parametric limits are subject to change. FOR OPTICAL TRANSMITTER DESCRIPTION Photograph of Laser Driver IC The laser driver IC were designed for use in 2.5Gb/s lightwave applications. FEATURES -High speed operation tr/tf = 80ps (RL=25Ω) -ECL/SCFL compatible interface -Adjustable outout current Iout = ˜60mA -Low Power Dissipation Vss = -5.2V, PD = 700mW Package Size : 9.6mm x 7.6mm x 1.6mm APPLICATION - 2.5Gb/s optical transmitter CIRCUIT DIAGRAM VT+ GND VMARK+ VMARK- IMOD Mark Density VIN IOUT Level Shift VREF Driverr IMON Input Buffer VT- VSS VMWA TYPICAL CHARACTERISTIC (Ta = 25ºC) Output waveform (@2.5Gb/s) Vss = -5.2V, IMOD = 3.2mA (@2.5Gb/s), PN : 211-1 10 mA/div. 100 ps/div. MITSUBISHI ELECTRIC (1/2) as of Sep. , 1997 MITSUBISHI SEMICONDUCTOR <GaAs digital IC> 2.5Gb/s LASER DRIVER PRELIMINARY ML0131 Notice : This is not a final specification Some parametric limits are subject to change. FOR OPTICAL TRANSMITTER ABSOLUTE MAXIMUM RATINGS (Ta = 25ºC) Symbol Parameter Ratings unit VSS Supply Voltage -7.5 V VIN Input Voltage VSS to 0 V Tc Operating Temperature -30 to +85 ºC Tstg Storage Temperature -65 to +150 ºC ELECTRICAL CHARACTERISTICS (Ta = 25ºC) Test Conditions Symbol Parameter VSS Supply voltage ISS Supply current VSS = -5.2V VREF Input reference voltage VSS = -5.2V VIN Input signal voltage VSS = -5.2V IOUT Output modulation curvent IMOD Min Limits Typ Max unit -5.46 -5.2 -4.94 V - 130 170 mA - -1.3 -0.5 0.8 1.0 - V V V V VSS = -5.2V 40 - 60 mA Adjust modulation current VSS = -5.2V - - 3.5 mA tr Rise time of modelation voltage VSS = -5.2V - 80 - ps tf Fall time of modulation voltage VSS = -5.2V - 80 - ps ECL SCFL ECL SCFL BLOCK DIAGRAM OF TEST SYSTEM GNDor-2V VT+ 1KΩ VMARK+ 25Ω IOUT Data generator GND 50Ω Laser driver IC VREF 0.1µF IMOD VSS VT- VMARK+ IMON VMAWA -5.2V OSC -5.2V -0.1µF GNDor-2V 1KΩ MITSUBISHI ELECTRIC 25Ω (2/2) as of Sep. , 1997