MITSUBISHI MGFC5216

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5216
Notice : This is not a final specification
Some parametric limits are subject to change.
Q-Band 4-Stage Driver Amplifier
DESCRIPTION
BLOCK DIAGRAM
The MGFC5216 is a GaAs MMIC chip especially
designed for 37.0 ~ 40.0 GHz band Middle
Power Amplifier (MPA) .
Vg1
FEATURES
Vg2
Vg3
Vg4
IN
OUT
RF frequency : 37.0 to 43.0 GHz
Vd1
Linear gain : 20dB (TYP.)@ 37 to 40 GHz
20 dB(TYP.) @ 40 to 43 GHz
P1dB
: ≥ 16 dBm(min.) @ 37 to 40 GHz
≥ 16 dBm(target) @ 40 to 43 GHz
TARGET SPECIFICATIONS (Ta=25˚C)
Parameter
Min.
Frequeny
37
Linear Gain
P1dB
Typical
Max.
Unit
40
GHz
20
16
Output VSWR
2.0
Vd12=4.5, Vd34=6
-0.3
Chip Size
Min.
Frequeny
40
Linear Gain
P1dB
Typical
V
mm2
Max.
Unit
43
GHz
20
dB
(16)
dBm
Input VSWR
2.4
Output VSWR
3.0
Vd
Vd12=4.5, Vd34=6
V
Vg
-0.3
V
Chip Size
PHOTOGRAPH
V
1.99x0.83
Specification
Vd4
dBm
2.2
Vg
Vd3
dB
Input VSWR
Vd
Vd2
1.99x0.83
mm2
( ):Design Target (Now Evaluating)
MITSUBISHI
ELECTRIC
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5216
Notice : This is not a final specification
Some parametric limits are subject to change.
Q-Band 4-Stage Driver Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
X=1.99 mm
Y=0.83 mm
Bond Pad Dimension=0.07 x 0.15 mm2 (RF)
0.1 x 0.1 mm2 (DC)
(630.0, 700.0)
(1395.0, 700.0)
(270.0, 700.0)
(990.0, 700.0)
(115.0, 445.0)
RFin
RFout
(1875.0, 445.0)
(1695.0, 130.0)
(965.0, 130.0)
(165.0, 125.5)
(515.0, 130.0)
(1350.0, 130.0)
Vg1
Vg2
Vg3
Vg4
RFin
GND
RFout
Vd1
Vd2
Vd3
MITSUBISHI
ELECTRIC
Vd4
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5216
Notice : This is not a final specification
Some parametric limits are subject to change.
Q-Band 4-Stage Driver Amplifier
TYPICAL CHARACTERISTICS
S-Parameter vs. Frequency
30
Measured
20
Id12=85mA
Id34=125mA
GAIN
10
0
-10
-20
S22
S11
-30
30
35
40
45
50
Frequency (GHz)
Output Power Performances
20
30
f=40GHz
Measured
15
25
10
20
5
-15
-10
-5
0
5
15
Pin (dBm)
MITSUBISHI
ELECTRIC
as of July '98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
PRELIMINARY
MGFC5216
Notice : This is not a final specification
Some parametric limits are subject to change.
Q-Band 4-Stage Driver Amplifier
AN EXAMPLE OF TEST CIRCUIT
Vg2
Vg1
Vg4
Vg3
Vg1
Vg2
Vg3
Vg4
RFin
GND
RFout
Vd1
Vd2
Vd3
Vd4
Vd3
Vd4
Vd1
Vd2
: Chip Capasitor ( 39 - 100 pF )
MITSUBISHI
ELECTRIC
as of July '98