MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5216 Notice : This is not a final specification Some parametric limits are subject to change. Q-Band 4-Stage Driver Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . Vg1 FEATURES Vg2 Vg3 Vg4 IN OUT RF frequency : 37.0 to 43.0 GHz Vd1 Linear gain : 20dB (TYP.)@ 37 to 40 GHz 20 dB(TYP.) @ 40 to 43 GHz P1dB : ≥ 16 dBm(min.) @ 37 to 40 GHz ≥ 16 dBm(target) @ 40 to 43 GHz TARGET SPECIFICATIONS (Ta=25˚C) Parameter Min. Frequeny 37 Linear Gain P1dB Typical Max. Unit 40 GHz 20 16 Output VSWR 2.0 Vd12=4.5, Vd34=6 -0.3 Chip Size Min. Frequeny 40 Linear Gain P1dB Typical V mm2 Max. Unit 43 GHz 20 dB (16) dBm Input VSWR 2.4 Output VSWR 3.0 Vd Vd12=4.5, Vd34=6 V Vg -0.3 V Chip Size PHOTOGRAPH V 1.99x0.83 Specification Vd4 dBm 2.2 Vg Vd3 dB Input VSWR Vd Vd2 1.99x0.83 mm2 ( ):Design Target (Now Evaluating) MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5216 Notice : This is not a final specification Some parametric limits are subject to change. Q-Band 4-Stage Driver Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : µM) X=1.99 mm Y=0.83 mm Bond Pad Dimension=0.07 x 0.15 mm2 (RF) 0.1 x 0.1 mm2 (DC) (630.0, 700.0) (1395.0, 700.0) (270.0, 700.0) (990.0, 700.0) (115.0, 445.0) RFin RFout (1875.0, 445.0) (1695.0, 130.0) (965.0, 130.0) (165.0, 125.5) (515.0, 130.0) (1350.0, 130.0) Vg1 Vg2 Vg3 Vg4 RFin GND RFout Vd1 Vd2 Vd3 MITSUBISHI ELECTRIC Vd4 as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5216 Notice : This is not a final specification Some parametric limits are subject to change. Q-Band 4-Stage Driver Amplifier TYPICAL CHARACTERISTICS S-Parameter vs. Frequency 30 Measured 20 Id12=85mA Id34=125mA GAIN 10 0 -10 -20 S22 S11 -30 30 35 40 45 50 Frequency (GHz) Output Power Performances 20 30 f=40GHz Measured 15 25 10 20 5 -15 -10 -5 0 5 15 Pin (dBm) MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5216 Notice : This is not a final specification Some parametric limits are subject to change. Q-Band 4-Stage Driver Amplifier AN EXAMPLE OF TEST CIRCUIT Vg2 Vg1 Vg4 Vg3 Vg1 Vg2 Vg3 Vg4 RFin GND RFout Vd1 Vd2 Vd3 Vd4 Vd3 Vd4 Vd1 Vd2 : Chip Capasitor ( 39 - 100 pF ) MITSUBISHI ELECTRIC as of July '98