MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High Power Amplifier (HPA) . Vg1 Vg2 In FEATURES RF frequency : 21.2 to 23.6 GHz Out Vd1 Vd2 Linear gain : ≥ 13 dB P1dB : ≥ 23 dBm DC power : Vd = 5 V, Id1 + Id2 = 270 mA ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Symbol Units Ratings Vd1, Vd2 Parameter Drain supply voltage Vg1, Vg2 Gate supply voltage Id1 Drain current 1 120 mA Id2 Drain current 2 240 mA Pin RF input power 16 dBm Ta Backside ambient temp. -20 ~ +70 ˚C Tstg Storage temp. -65 ~ +175 ˚C Tmax Maximum assembly temp. +300 ˚C -3 6 V ~ 0.5 V ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) Limits Symbol Parameter Units Conditions Min. Gain Gain VSWR in Input VSWR VSWR out Output VSWR P1dB Output power at 1 dB compression point IM3 Inter modulation level Vd = 5 V Id1 = 90 mA Id2 = 180 mA (RF off) Typ. Max. 13.0 dB 2.2 - 2.2 - f = 21.2, 23.6 GHz Single tone 23.0 dBm f = 21.2, 23.6 GHz Tow tone(10MHz off) Pout = 20 dBm (22.0) dBc MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : µM) 1410 620 GND GND 950 Vg1 Vg2 RF in RF out GND GND 550 R(Vd1) GND Vd1 R(Vd2) GND Vd2 550 340 530 935 1380 1940 X Dimention 1.94 mm Y Dimention 0.95 mm MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 5 V, Id1 = 90 mA, Id2 = 180 mA, Ta = 25 ˚C) 20 S21 10 0 S11 -10 S22 -20 -30 10 15 20 25 Frequency [GHz] 30 Output Power Performances (Vd = 5 V, Id1 = 90 mA, Id2 = 180 mA, Ta = 25 ˚C) 50 30 f = 22.4 GHz 40 25 20 30 15 20 10 10 5 -10 -5 0 5 10 Pin [dBm] MITSUBISHI ELECTRIC 15 0 20 as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier AN EXAMPLE OF TEST CIRCUIT Vg1 Vg2 Cb Vg1 Cb Vg2 RFin RFout R(Vd2) GND R(Vd1) Vd1 Vd2 Cb Cb Vd1 Vd2 : Chip Condenser ( 39 pF ) Cb > 100 µF MITSUBISHI ELECTRIC as of July '98