MITSUBISHI RA20H8087M-E01

MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA20H8087M
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA20H8087M is a 20-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 806- to 870-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V GG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
BLOCK DIAGRAM
2
3
1
4
5
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
PACKAGE CODE: H2S
• Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 806-825/ 851-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
RA20H8087M-E01
RA20H8087M-01
SUPPLY FORM
Antistatic tray,
10 modules/tray
(Japan - packed without desiccator)
RA20H8087M
MITSUBISHI ELECTRIC
1/10
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<5V
17
V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW
6
V
Pin
Input Power
100
mW
Pout
Output Power
f=806-825/ 851-870MHz,
ZG=ZL=50Ω
40
W
Operation Case Temperature Range
-30 to +110
°C
Storage Temperature Range
-40 to +110
°C
Tcase(OP)
Tstg
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
CONDITIONS
Frequency Range
Pout
Output Power
ηT
Total Efficiency
nd
2fo
2 Harmonic
ρ in
Input VSWR
IGG
Gate Current
MIN
TYP
MAX
806-825/ 851-870
VDD=12.5V, VGG=5V, Pin=50mW
Pout=20W(VGG control)
VDD=12.5V
Pin=50mW
—
Stability
VDD=10.0-15.5V, Pin=25-70mW,
Pout=1 to 25W (VGG control), Load VSWR=3:1
—
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=20W (VGG control),
Load VSWR=8:1
UNIT
MHz
20
W
25
%
-30
dBc
3:1
—
1
mA
No parasitic oscillation
—
No degradation or
destroy
—
All parameters, conditions, ratings, and limits are subject to change with out notice.
RA20H8087M
MITSUBISHI ELECTRIC
2/10
25 April 2003
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
RA20H8087M
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
2nd , 3 rd HARMONICS versus FREQUENCY
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
40
50
-30
40
30
η T @P out =20W
20
20
V DD=12.5V
P in =50mW
10
10
ρ in @P out =20W
0
770
790 810 830 850
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
16
30
12
IDD
20
8
f=764MHz,
VDD=12.5V,
VGG =5V
10
4
0
-10
-5
0
5
10
15
40
16
30
12
20
f=806MHz,
V DD=12.5V,
V GG =5V
10
0
30
12
I DD
8
f=825MHz,
V DD=12.5V,
V GG=5V
5
10
-5
0
5
10
15
20
15
4
60
0
OUTPUT POWER
P out(dBm)
POWER GAIN Gp(dB)
20
16
0
-10
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT I DD(A)
OUTPUT POWER
P out(dBm)
POWER GAIN Gp(dB)
Pout
Gp
-5
4
0
24
-10
8
I DD
INPUT POWER P in(dBm)
40
0
-15
20
Gp
-15
60
10
870
P out
50
20
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
20
790 810 830 850
FREQUENCY f(MHz)
24
INPUT POWER Pin(dBm)
50
770
60
DRAIN CURRENT I DD(A)
OUTPUT POWER
P out(dBm)
POWER GAIN Gp(dB)
20
Gp
rd
3 @Pout=20W
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
Pout
50
0
-15
-60
-70
750
870
60
2nd @Pout=20W
-50
OUTPUT POWER
P out(dBm)
POWER GAIN Gp(dB)
0
750
-40
INPUT POWER Pin(dBm)
Pout
50
20
Gp
40
16
30
12
IDD
20
8
f=851MHz,
V DD=12.5V,
V GG=5V
10
0
-15
20
24
-10
-5
0
5
10
15
4
DRAIN CURRENT I DD(A)
30
VDD=12.5V
Pin=50mW
DRAIN CURRENT IDD(A)
P out @VGG =5V
-20
HARMONICS (dBc)
50
60
TOTAL EFFICIENCY
η T(%)
INPUT VSWR ρin (-)
OUTPUT POWER Pout(W)
60
0
20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
Pout
50
20
Gp
40
16
30
12
IDD
20
8
f=870MHz,
V DD=12.5V,
V GG=5V
10
0
-15
-10
-5
0
5
10
15
4
DRAIN CURRENT I DD(A)
OUTPUT POWER
P out(dBm)
POWER GAIN Gp(dB)
60
0
20
INPUT POWER Pin(dBm)
RA20H8087M
MITSUBISHI ELECTRIC
3/10
25 April 2003
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
RA20H8087M
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
12
50
10
ID D
40
8
P out
30
6
20
4
10
2
0
0
2
4
6
8
10
12
14
DRAIN VOLTAGE VDD(V)
80
14
12
ID D
10
P out
40
8
30
6
20
4
10
2
0
0
2
4
6
8
10
12
14
DRAIN VOLTAGE VDD(V)
8
P out
ID D
30
6
20
4
10
2
0
4
6
8
10
12
14
DRAIN VOLTAGE VDD(V)
16
80
OUTPUT POWER Pout(W)
50
10
40
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT I DD(A)
OUTPUT POWER Pout(W)
60
12
50
2
16
f=825MHz,
V GG=5V,
P in=50mW
14
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
70
60
16
80
16
f=806MHz,
V GG=5V,
P in=50mW
70
16
f=851MHz,
V GG =5V,
P in =50mW
70
60
14
12
50
10
IDD
40
Pout
8
30
6
20
4
10
2
0
16
0
2
4
6
8
10
12
14
DRAIN VOLTAGE VDD (V)
DRAIN CURRENT I DD(A)
60
14
OUTPUT POWER P out(W)
16
f=764MHz,
V GG=5V,
P in=50mW
70
DRAIN CURRENT I DD(A)
OUTPUT POWER Pout(W)
80
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT I DD(A)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
f=870MHz,
VGG=5V,
Pin=50mW
60
14
12
50
10
ID D
40
Pout
8
30
6
20
4
10
2
0
0
2
4
6
8
10
12
14
DRAIN VOLTAGE VDD(V)
16
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
50
40
10
ID D
P out
8
30
6
20
4
10
2
0
2.5
RA20H8087M
3
3.5
4
4.5
5
GATE VOLTAGE VGG(V)
0
5.5
60
OUTPUT POWER Pout(W)
12
f=764MHz,
V DD=12.5V,
P in=50mW
DRAIN CURRENT I DD(A)
OUTPUT POWER Pout(W)
60
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
f=806MHz,
V DD=12.5V,
P in=50mW
50
40
ID D
10
8
P out
30
6
20
4
10
2
0
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE VGG(V)
MITSUBISHI ELECTRIC
4/10
DRAIN CURRENT I DD(A)
70
DRAIN CURRENT I DD(A)
OUTPUT POWER Pout(W)
80
5.5
25 April 2003
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
RA20H8087M
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
50
40
ID D
10
P out
8
30
6
20
4
10
2
0
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE VGG(V)
60
5.5
OUTPUT POWER Pout(W)
12
f=825MHz,
V DD=12.5V,
P in=50mW
DRAIN CURRENT I DD(A)
OUTPUT POWER Pout(W)
60
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
f=851MHz,
VDD=12.5V,
Pin =50mW
50
12
I DD
10
Pout
40
8
30
6
20
4
10
2
0
0
2.5
3
3.5
4
4.5
5
GATE VOLTAGE VGG (V)
DRAIN CURRENT I DD(A)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
f=870MHz,
VDD=12.5V,
Pin =50mW
50
IDD
40
10
8
Pout
30
6
20
4
10
2
0
0
2.5
RA20H8087M
3
3.5
4
4.5
5
GATE VOLTAGE VGG (V)
DRAIN CURRENT I DD(A)
OUTPUT POWER Pout(W)
60
5.5
MITSUBISHI ELECTRIC
5/10
25 April 2003
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
RA20H8087M
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING (mm)
66.0 ±0.5
7.25 ±0.8
51.5 ±0.5
3
2.0 ±0.5
2
4
4.0 ±0.3
9.5 ±0.5
5
1
14.0 ±1
2-R2 ±0.5
17.0 ±0.5
60.0 ±0.5
21.0 ±0.5
3.0 ±0.3
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
(50.4)
(9.88)
2.3 ±0.3
7.5 ±0.5
0.09 ±0.02
3.1 +0.6/-0.4
55.5 ±1
1 RF Input (P in)
2 Gate Voltage (V GG)
3 Drain Voltage (V DD)
4 RF Output (P out)
5 RF Ground (Case)
RA20H8087M
MITSUBISHI ELECTRIC
6/10
25 April 2003
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
RA20H8087M
OBSERVE HANDLING PRECAUTIONS
TEST BLOCK DIAGRAM
Power
Meter
DUT
1
Signal
Generator
Attenuator
Preamplifier
Attenuator
Directional
Coupler
2
3
ZG=50Ω
C1
5
Spectrum
Analyzer
4
ZL=50Ω
Directional
Coupler
Attenuator
Power
Meter
C2
+
DC Power
Supply V GG
+
DC Power
Supply V DD
C1, C2: 4700pF, 22uF in parallel
1 RF Input (P in)
2 Gate Voltage (V GG)
3 Drain Voltage (V DD)
4 RF Output (P out)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
4
5
RA20H8087M
MITSUBISHI ELECTRIC
7/10
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap
is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and
coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later
when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a maximum
of three seconds.
Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=20W, V DD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ ηT =25%
VDD
Stage
(W)
(W)
(°C/W)
(A)
(V)
st
1
0.05
1.0
4.5
0.50
12.5
2nd
1.0
8.0
3.2
1.90
rd
3
8.0
20.0
1.6
3.90
The channel temperatures of each stage transistor Tch = Tcase + (V DD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.50A - 1.0W + 0.05W) x 4.5°C/W
= Tcase + 23.9 °C
Tch2 = Tcase + (12.5V x 1.90A - 8.0W + 1.0W) x 3.2°C/W
= Tcase + 53.6 °C
Tch3 = Tcase + (12.5V x 3.90A - 20.0W + 8.0W) x 1.6°C/W
= Tcase + 58.8 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and P out=20W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (P out / ηT ) - Pout +
Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (20W/25% - 20W + 0.05W) = 0.50 °C/W
When mounting the module with the thermal resistance of 0.50 °C/W, the channel temperature of each stage transistor
is:
Tch1 = Tair + 53.9 °C
Tch2 = Tair + 83.6 °C
Tch3 = Tair + 88.8 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
RA20H8087M
MITSUBISHI ELECTRIC
8/10
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (V GG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=4V, the output power and drain current increases substantially.
Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and
can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced
mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding
those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios.
Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are
caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such
as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any
malfunction or mishap.
RA20H8087M
MITSUBISHI ELECTRIC
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25 April 2003
SALES CONTACT
JAPAN:
GERMANY:
Mitsubishi Electric Corporation
Mitsubishi Electric Europe B.V.
Semiconductor Sales Promotion Department
Semiconductor
2-2-3 Marunouchi, Chiyoda-ku
Gothaer Strasse 8
Tokyo, Japan 100
D-40880 Ratingen, Germany
Email:
[email protected]
Email:
[email protected]
Phone:
+81-3-3218-4854
Phone:
+49-2102-486-0
Fax:
+81-3-3218-4861
Fax:
+49-2102-486-3670
HONG KONG:
FRANCE:
Mitsubishi Electric Hong Kong Ltd.
Mitsubishi Electric Europe B.V.
Semiconductor Division
Semiconductor
41/F. Manulife Tower, 169 Electric Road
25 Boulevard des Bouvets
North Point, Hong Kong
F-92741 Nanterre Cedex, France
Email:
[email protected]
Email:
[email protected]
Phone:
+852 2510-0555
Phone:
+33-1-55685-668
Fax:
+852 2510-9822
Fax:
+33-1-55685-739
SINGAPORE:
ITALY:
Mitsubishi Electric Asia PTE Ltd
Mitsubishi Electric Europe B.V.
Semiconductor Division
Semiconductor
307 Alexandra Road
Centro Direzionale Colleoni,
#3-01/02 Mitsubishi Electric Building,
Palazzo Perseo 2, Via Paracelso
Singapore 159943
I-20041 Agrate Brianza, Milano, Italy
Email:
[email protected]
Email:
[email protected]
Phone:
+65 64 732 308
Phone:
+39-039-6053-10
Fax:
+65 64 738 984
Fax:
+39-039-6053-212
TAIWAN:
U.K.:
Mitsubishi Electric Taiwan Company, Ltd.,
Mitsubishi Electric Europe B.V.
Semiconductor Department
Semiconductor
9F, No. 88, Sec. 6
Travellers Lane, Hatfield
Chung Shan N. Road
Hertfordshire, AL10 8XB, England
Taipei, Taiwan, R.O.C.
Email:
[email protected]
Email:
[email protected]
Phone:
+44-1707-278-900
Phone:
+886-2-2836-5288
Fax:
+44-1707-278-837
Fax:
+886-2-2833-9793
U.S.A.:
AUSTRALIA:
Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Australia,
Electronic Device Group
Semiconductor Division
1050 East Arques Avenue
348 Victoria Road
Sunnyvale, CA 94085
Rydalmere, NSW 2116
Email:
[email protected]
Sydney, Australia
Phone:
408-730-5900
Email: [email protected]
Fax:
408-737-1129
Phone:
+61 2 9684-7210
+61 2 9684 7212
+61 2 9684 7214
+61 3 9262 9898
Fax:
+61 2 9684-7208
+61 2 9684 7245
CANADA:
Mitsubishi Electric Sales Canada, Inc.
4299 14th Avenue
Markham, Ontario, Canada L3R OJ2
Phone:
905-475-7728
Fax:
905-475-1918
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MITSUBISHI ELECTRIC
10/10
25 April 2003