MITSUBISHI RA55H4047M

MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA55H4047M
RoHS COMPLIANCE , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA55H4047M is a 55-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The
output power and drain current increase as the gate voltage
increases. With a gate voltage around 4V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the
output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
1
4
5
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA55H4047M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS
Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA55H4047M-101
Antistatic tray,
10 modules/tray
RA55H4047M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA55H4047M
RoHS COMPLIANCE
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
VDD
CONDITIONS
Drain Voltage
VGG<5V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW
Pin
Input Power
Pout
Output Power
Tcase(OP)
Tstg
RATING
UNIT
17
V
6
V
100
mW
65
W
Operation Case Temperature Range
-30 to +110
°C
Storage Temperature Range
-40 to +110
°C
f=400-470MHz,
ZG=ZL=50Ω
Note.1.The above parameters are independently guaranteed.
Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
Pout
ηT
CONDITIONS
Frequency Range
nd
2fo
2
ρin
Input VSWR
Harmonic
IGG
Gate Current
—
Stability
—
Load VSWR Tolerance
TYP
400
Output Power
Total Efficiency
MIN
VDD=12.5V
VGG=5V
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
Pout<65W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW, Pout=55W (VGG control),
Load VSWR=20:1
MAX
UNIT
470
MHz
55
W
35
%
-50
dBc
3:1
—
1
mA
No parasitic oscillation
—
No degradation or
destroy
—
Note. All parameters, conditions, ratings, and limits are subject to change without notice.
RA55H4047M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA55H4047M
RoHS COMPLIANCE
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
rd
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
80
40
30
30
V DD=12.5V
V GG=5V
Pin=50m W
ρ in
20
10
0
0
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
-50
-60
2nd
-70
3 rd
-80
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
30
12
IDD
8
f=400MHz,
V DD=12.5V,
V GG=5V
10
4
0
0
-10
-5
0
5
10
INPUT POWER Pin(dBm)
15
12
8
IDD
f=450MHz,
V DD=12.5V,
V GG=5V
4
0
out (dBm)
30
0
5
10
20
f=430MHz,
V DD=12.5V,
V GG=5V
10
15
6
8
10
12
DRAIN VOLTAGE VDD (V)
10
15
20
24
Pout
20
Gp
40
16
30
12
20
8
IDD
f=470MHz,
V DD=12.5V,
V GG=5V
10
4
0
-10
-5
0
5
10
15
20
Pout
14
16
OUTPUT POWER P
24
22
20
18
16
14
12
10
8
6
4
2
0
out (W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT I DD (A)
out (W)
OUTPUT POWER P
RA55H4047M
4
5
INPUT POWER Pin(dBm)
IDD
2
0
0
20
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
f=400MHz,
V GG=5V,
Pin=50m W
4
0
-5
INPUT POWER Pin(dBm)
120
110
100
90
80
70
60
50
40
30
20
10
0
8
IDD
50
POWER GAIN Gp(dB)
16
OUTPUT POWER P
20
40
0
12
60
DRAIN CURRENT I DD (A)
out (dBm)
POWER GAIN Gp(dB)
OUTPUT POWER P
Pout
-5
30
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
Gp
-10
16
-10
24
10
40
INPUT POWER Pin(dBm)
60
20
20
0
20
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
Pout
Gp
DRAIN CURRENT I DD (A)
20
out (dBm)
16
24
50
POWER GAIN Gp(dB)
40
OUTPUT POWER P
20
Gp
60
DRAIN CURRENT I DD (A)
Pout
50
POWER GAIN Gp(dB)
OUTPUT POWER P
out (dBm)
60
120
110
100
90
80
70
60
50
40
30
20
10
0
f=430MHz,
V GG=5V,
Pin=50m W
24
22
20
18
16
14
12
10
8
6
4
2
0
Pout
IDD
2
4
6
8
10
12
DRAIN VOLTAGE VDD (V)
MITSUBISHI ELECTRIC
3/8
14
DRAIN CURRENT I DD (A)
20
-40
HARMONICS (dBc)
50
40
TOTAL EFFICIENCY η T(%)
60
ηT
10
V DD=12.5V
V GG=5V
Pin=50m W
70
60
50
-30
DRAIN CURRENT IDD(A)
Pout
70
INPUT VSWR ρ in (-)
OUTPUT POWER P
out (W)
80
2nd, 3 HARMONICS versus FREQUENCY
16
24 Jan 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA55H4047M
RoHS COMPLIANCE
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
Pout
IDD
6
8
10
12
DRAIN VOLTAGE VDD (V)
14
16
80
14
60
12
IDD
50
10
40
8
30
6
20
4
10
2
0
0
2.5
3
3.5
4
4.5
GATE VOLTAGE VGG(V)
5
out (W)
Pout
90
16
OUTPUT POWER P
70
18
DRAIN CURRENT I DD (A)
out (W)
OUTPUT POWER P
f=400MHz,
V DD=12.5V,
Pin=50m W
5.5
12
10
30
6
20
4
10
2
0
0
RA55H4047M
3.5
4
4.5
GATE VOLTAGE VGG(V)
5
12
IDD
10
40
8
30
6
20
4
10
2
0
5.5
out (W)
80
8
3
14
50
90
40
2.5
16
Pout
60
16
14
IDD
50
70
18
OUTPUT POWER P
Pout
60
16
18
f=430MHz,
V DD=12.5V,
Pin=50m W
2.5
DRAIN CURRENT I DD (A)
out (W)
OUTPUT POWER P
70
14
3
3.5
4
4.5
GATE VOLTAGE VGG(V)
5
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
f=450MHz,
V DD=12.5V,
Pin=50m W
6
8
10
12
DRAIN VOLTAGE VDD (V)
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
4
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
80
Pout
IDD
2
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
24
22
20
18
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I DD (A)
4
f=470MHz,
V GG=5V,
Pin=50m W
18
f=470MHz,
V DD=12.5V,
Pin=50m W
70
60
16
Pout
14
12
IDD
50
10
40
8
30
6
20
4
10
2
0
DRAIN CURRENT I DD (A)
2
120
110
100
90
80
70
60
50
40
30
20
10
0
DRAIN CURRENT I DD (A)
24
22
20
18
16
14
12
10
8
6
4
2
0
out (W)
f=450MHz,
V GG=5V,
Pin=50m W
OUTPUT POWER P
120
110
100
90
80
70
60
50
40
30
20
10
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT I DD (A)
OUTPUT POWER P
out (W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
0
2.5
3
3.5
4
4.5
GATE VOLTAGE VGG(V)
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5.5
24 Jan 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA55H4047M
OUTLINE DRAWING (mm)
66.0 ±0.5
7.25 ±0.8
51.5 ±0.5
3
2.0 ±0.5
2
4
4.0 ±0.3
9.5 ±0.5
5
1
14.0 ±1
2-R2 ±0.5
17.0 ±0.5
60.0 ±0.5
21.0 ±0.5
3.0 ±0.3
Ø0.60 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
(50.4)
(9.88)
2.3 ±0.3
7.5 ±0.5
0.09 ±0.02
3.1 +0.6/-0.4
55.5 ±1
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA55H4047M
MITSUBISHI ELECTRIC
5/8
24 Jan 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA55H4047M
TEST BLOCK DIAGRAM
Power
Meter
DUT
1
Signal
Generator
Attenuator
Preamplifier
Attenuator
Directional
Coupler
3
2
Spectrum
Analyzer
4
ZL=50Ω
ZG=50Ω
C1
5
Directional
Coupler
Attenuator
Power
Meter
C2
+
DC Power
Supply VGG
+
DC Power
Supply VDD
C1, C2: 4700pF, 22uF in parallel
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
2
1
4
5
RA55H4047M
MITSUBISHI ELECTRIC
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24 Jan 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA55H4047M
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the
substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form
the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF
connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal
expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, over voltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving
screws or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=55W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ ηT=35%
VDD
Stage
(W)
(W)
(V)
(°C/W)
(A)
1st
0.05
1.5
23.0
0.28
12.5
2nd
1.5
13.0
2.4
3.30
3rd
13.0
55.0
1.2
8.70
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.28A – 1.5W + 0.05W) x 23.0°C/W = Tcase + 47.2 °C
Tch2 = Tcase + (12.5V x 3.30A - 13.0W + 1.5W) x 2.4°C/W = Tcase + 71.4 °C
Tch3 = Tcase + (12.5V x 8.70A - 55.0W + 13.0W) x 1.2°C/W = Tcase + 80.1 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=55W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (55W/35% – 55W + 0.05W) = 0.29 °C/W
When mounting the module with the thermal resistance of 0.29 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 77.2 °C
Tch2 = Tair + 101.4 °C
Tch3 = Tair + 110.1 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
RA55H4047M
MITSUBISHI ELECTRIC
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24 Jan 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA55H4047M
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=4V, the output power and drain current increases substantially.
Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation
failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against
any malfunction or mishap.
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