MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H2S RoHS COMPLIANCE • RA35H1516M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA35H1516M-101 Antistatic tray, 10 modules/tray RA35H1516M MITSUBISHI ELECTRIC 1/8 13 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS COMPLIANCE MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDD Drain Voltage VGG<5V VGG Gate Voltage VDD<12.5V, Pin=0mW Pin Input Power Pout Output Power Tcase(OP) Tstg RATING UNIT 17 V 6 V 100 mW 50 W Operation Case Temperature Range -30 to +110 °C Storage Temperature Range -40 to +110 °C TYP MAX UNIT 162 MHz f=154-162MHz, ZG=ZL=50Ω The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f Pout ηT CONDITIONS Frequency Range 154 Output Power Total Efficiency nd 2fo 2 ρin Input VSWR Harmonic IGG Gate Current — Stability — Load VSWR Tolerance MIN VDD=12.5V VGG=5V Pin=50mW VDD=8.0-15.2V, Pin=25-70mW, Pout<50W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=40W (VGG control), Load VSWR=20:1 40 W 50 % -50 dBc 3:1 — 1 mA No parasitic oscillation — No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice. RA35H1516M MITSUBISHI ELECTRIC 2/8 13 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS COMPLIANCE TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) 2nd, 3rd HARMONICS versus FREQUENCY OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 100 80 ηt @Pout=30W 60 VDD=12.5V Pin=50mW 20 10 40 20 ρin @Pout=30W 0 150 -50 -60 -70 150 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 12 10 Gp 40 8 30 6 20 4 f=154MHz, VDD=12.5V, VGG=5V IDD 10 2 0 -5 0 5 10 15 12 Pout 50 8 30 6 IDD 20 4 f=162MHz, VDD=12.5V, VGG=5V 10 0 -10 8 Pout 30 6 IDD 4 10 2 0 0 4 6 8 10 12 DRAIN VOLTAGE VDD(V) OUTPUT POWER P out(W) 10 40 10 40 8 6 IDD 20 4 10 2 0 0 RA35H1516M 5 5.5 10 Pout 40 8 30 6 IDD 20 4 10 2 0 4 6 8 10 12 DRAIN VOLTAGE VDD(V) 14 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 60 OUTPUT POWER P out(W) Pout 2.5 3 3.5 4 4.5 GATE VOLTAGE VGG(V) 20 0 12 2 15 12 2 DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 60 30 10 f=162MHz, VDD=12.5V, VGG=5V 50 14 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 50 5 60 12 f=154MHz, VDD=12.5V, VGG=5V f=154MHz, VDD=12.5V, VGG=5V 0 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 60 2 -5 INPUT POWER Pin(dBm) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 20 2 0 20 INPUT POWER Pin(dBm) 50 10 Gp 40 0 -10 170 60 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) Pout 50 155 160 165 FREQUENCY f(MHz) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 60 2nd 3rd 0 170 155 160 165 FREQUENCY f(MHz) -40 DRAIN CURRENT IDD(A) 30 IDD(A) 40 VDD=12.5V Pin=50mW Pout=30W @VGG control -30 DRAIN CURRENT Pout @VGG=5V 12 f=162MHz, VDD=12.5V, VGG=5V 50 Pout 10 40 8 30 6 IDD 20 4 10 2 0 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE VGG(V) MITSUBISHI ELECTRIC 3/8 5 DRAIN CURRENT IDD(A) 50 -20 HARMONICS (dBc) 120 TOTAL EFFICIENCY ηT(%) INPUT VSWR ρin (-) OUTPUT POWER P out(W) 60 5.5 13 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA35H1516M OUTLINE DRAWING (mm) 66.0 ±0.5 7.25 ±0.8 51.5 ±0.5 3 2.0 ±0.5 2 4 4.0 ±0.3 9.5 ±0.5 5 1 14.0 ±1 2-R2 ±0.5 17.0 ±0.5 60.0 ±0.5 21.0 ±0.5 3.0 ±0.3 Ø0.45 ±0.15 12.0 ±1 16.5 ±1 43.5 ±1 (50.4) (9.88) 2.3 ±0.3 7.5 ±0.5 0.09 ±0.02 3.1 +0.6/-0.4 55.5 ±1 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA35H1516M MITSUBISHI ELECTRIC 4/8 13 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA35H1516M TEST BLOCK DIAGRAM DUT Power Meter 1 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler 5 3 2 C1 4 ZL=50Ω ZG=50Ω Spectrum Analyzer Directional Coupler Attenuator Power Meter C2 + DC Power Supply VGG + DC Power Supply VDD C1, C2: 4700pF, 22uF in parallel 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 2 1 4 5 RA35H1516M MITSUBISHI ELECTRIC 5/8 13 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA35H1516M PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=40W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ ηT=50% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (°C/W) (A) st 0.05 2.3 23.0 0.30 1 12.5 2nd 2.3 40.0 1.2 6.0 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.30A – 2.3W + 0.05W) x 23.0°C/W = Tcase + 34.5 °C = Tcase + 44.8 °C Tch2 = Tcase + (12.5V x 6.0A - 40.0W + 2.3W) x 1.2°C/W For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=40W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (40W/50% – 40W + 0.05W) = 0.75 °C/W When mounting the module with the thermal resistance of 0.75 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 64.5 °C Tch2 = Tair + 74.8 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions. RA35H1516M MITSUBISHI ELECTRIC 6/8 13 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA35H1516M Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (VGG). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around VGG=4V, the output power and drain current increases substantially. Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA35H1516M MITSUBISHI ELECTRIC 7/8 13 Jan 2006 SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: [email protected] Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: [email protected] Phone: +49-2102-486-0 Fax: +49-2102-486-4140 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: [email protected] Phone: +852 2510-0555 Fax: +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 25 Boulevard des Bouvets F-92741 Nanterre Cedex, France Email: [email protected] Phone: +33-1-55685-668 Fax: +33-1-55685-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road #3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: [email protected] Phone: +65 64 732 308 Fax: +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: [email protected] Phone: +39-039-6053-10 Fax: +39-039-6053-212 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: [email protected] Phone: +886-2-2836-5288 Fax: +886-2-2833-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: [email protected] Phone: +44-1707-278-900 Fax: +44-1707-278-837 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085 Email: [email protected] Phone: 408-730-5900 Fax: 408-737-1129 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road Rydalmere, NSW 2116 Sydney, Australia Email: [email protected] Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 RA35H1516M MITSUBISHI ELECTRIC 8/8 13 Jan 2006