MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. BLOCK DIAGRAM FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 440-520MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • 66 x 21 x 9.8 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER RA30H4452M-E01 RA30H4452M-01 (Japan - packed without desiccator) RA30H4452M SUPPLY FORM Antistatic tray, 10 modules/tray MITSUBISHI ELECTRIC 1/9 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE MITSUBISHI RF POWER MODULE RA30H4452M OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD CONDITIONS Drain Voltage VGG<5V VGG Gate Voltage VDD<12.5V, Pin=0mW Pin Input Power Pout Output Power Tcase(OP) Tstg RATING UNIT 17 V 6 V 100 mW 45 W Operation Case Temperature Range -30 to +110 °C Storage Temperature Range -40 to +110 °C TYP MAX UNIT 520 MHz f=440-520MHz, ZG=ZL=50Ω Above Parameters are guaranteed independently ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f CONDITIONS Frequency Range MIN 440 Pout Output Power 30 W ηT Total Efficiency 40 % nd 2fo 2 Harmonic ρin Input VSWR IGG Gate Current VDD=12.5V, VGG=5V, -25 dBc Pin=50mW 3:1 — — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<40W (VGG control), Load VSWR=3:1 — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1 1 mA No parasitic oscillation — No degradation or destroy — All Parameters, Conditions, Ratings and Limits are subject to change without notice RA30H4452M MITSUBISHI ELECTRIC 2/9 2 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H4452M OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) rd 2nd, 3 HARMONICS versus FREQUENCY OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY -20 60 100 60 40 10 0 0 430 440 450 460 470 480 490 500 510 520 530 FREQUENCY f(MHz) -70 430 440 450 460 470 480 490 500 510 520 530 FREQUENCY f(MHz) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 12 10 40 8 30 6 IDD 20 4 f=440MHz, V DD=12.5V, V GG=5V 10 2 0 0 -10 -5 0 5 10 15 12 Gp POWER GAIN Gp(dB) 50 60 OUTPUT POWER Pout (dBm) Pout DRAIN CURRENT IDD (A) POWER GAIN Gp(dB) OUTPUT POWER Pout (dBm) 60 Gp 40 8 30 20 4 f=470MHz, V DD=12.5V, V GG=5V 10 -5 20 4 f=490MHz, V DD=12.5V, V GG=5V 2 0 POWER GAIN Gp(dB) 6 IDD OUTPUT POWER Pout (dBm) 30 DRAIN CURRENT IDD (A) POWER GAIN Gp(dB) OUTPUT POWER Pout (dBm) 8 0 5 10 15 Gp 50 8 30 6 IDD 20 4 f=520MHz, V DD=12.5V, V GG=5V 10 14 10 40 8 IDD 6 20 4 10 2 0 0 RA30H4452M 14 16 OUTPUT POWER Pout (W) 80 DRAIN CURRENT IDD (A) OUTPUT POWER Pout (W) 90 16 50 6 8 10 12 DRAIN VOLTAGE V DD (V) 2 0 18 12 4 10 40 -10 60 2 Pout -5 0 5 10 15 20 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE Pout 30 20 INPUT POWER Pin(dBm) 90 70 15 0 20 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE f=440MHz, V DD=12.5V, V GG=5V 10 12 INPUT POWER P in(dBm) 80 5 60 10 40 0 0 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER Pout -5 2 0 -10 12 -10 6 IDD INPUT POWER P in(dBm) 60 10 10 0 20 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER Gp Pout 50 INPUT POWER P in(dBm) 50 3rd 2nd -60 20 ρ in -50 IDD(A) 20 -40 DRAIN CURRENT IDD (A) 30 80 18 f=470MHz, V DD=12.5V, V GG=5V 70 16 Pout 14 60 12 50 10 40 8 IDD 30 6 20 4 10 2 0 DRAIN CURRENT IDD (A) ηT V DD=12.5V V GG=5V Pin=50mW -30 DRAIN CURRENT V DD=12.5V V GG=5V Pin=50mW 40 HARMONICS (dBc) INPUT VSWR ρin (-) 50 TOTAL EFFICIENCY ηT(%) OUTPUT POWER Pout (W) Pout 0 2 4 6 8 10 12 DRAIN VOLTAGE V DD (V) MITSUBISHI ELECTRIC 3/9 14 16 2 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H4452M OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) 90 14 60 12 50 10 40 8 IDD 30 6 20 4 10 2 0 0 2 4 6 8 10 12 14 DRAIN VOLTAGE V DD(V) 8 IDD 30 6 20 4 10 2 0 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE V GG(V) 8 6 20 4 10 2 0 0 2 RA30H4452M 2.5 3 3.5 4 4.5 GATE VOLTAGE V GG(V) 5 6 8 10 12 14 DRAIN VOLTAGE V DD(V) 16 12 f=470MHz, VDD=12.5V, VGG=5V 50 Pout 10 40 8 IDD 30 6 20 4 10 2 0 2.5 3 3.5 4 4.5 GATE VOLTAGE V GG(V) 5 60 OUTPUT POWER P out(W) 10 IDD 0 4 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) Pout 40 30 2 2 12 50 4 10 0 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE f=490MHz, VDD=12.5V, VGG=5V 6 20 5 60 8 IDD 30 60 OUTPUT POWER P out(W) 10 40 10 40 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 50 12 50 2 12 Pout 14 Pout 60 16 60 16 0 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE f=440MHz, VDD=12.5V, VGG=5V 70 DRAIN CURRENT IDD(A) Pout 18 f=520MHz, VDD=12.5V, VGG=5V 80 12 f=520MHz, VDD=12.5V, VGG=5V 50 10 Pout 40 8 30 6 IDD 20 4 10 2 0 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE V GG(V) MITSUBISHI ELECTRIC 4/9 DRAIN CURRENT I DD(A) 70 16 OUTPUT POWER P out(W) 18 f=490MHz, VDD=12.5V, VGG=5V 80 DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 90 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE DRAIN CURRENT IDD(A) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 5 2 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H4452M OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) 66.0 ±0.5 7.25 ±0.8 51.5 ±0.5 3 2.0 ±0.5 2 4 4.0 ±0.3 9.5 ±0.5 5 1 14.0 ±1 2-R2 ±0.5 17.0 ±0.5 60.0 ±0.5 21.0 ±0.5 3.0 ±0.3 Ø0.45 ±0.15 12.0 ±1 16.5 ±1 43.5 ±1 (50.4) (9.88) 2.3 ±0.3 7.5 ±0.5 0.09 ±0.02 3.1 +0.6/-0.4 55.5 ±1 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA30H4452M MITSUBISHI ELECTRIC 5/9 2 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H4452M OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM Power Meter DUT 1 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler 2 C1, C2: 4700pF, 22uF in parallel 3 4 ZL=50Ω ZG=50Ω C1 Spectrum Analyzer 5 Directional Coupler Attenuator Power Meter C2 + DC Power Supply VGG + DC Power Supply VDD 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 2 1 4 5 RA30H4452M MITSUBISHI ELECTRIC 6/9 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE MITSUBISHI RF POWER MODULE OBSERVE HANDLING PRECAUTIONS RA30H4452M PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during srewing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichlorethylene) d) Frequent on/off switching causing thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque 0.4 to 0.6Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The soldering temperature shall be lower than 260°C for maximum 10 seconds, or lower than 350°C for maximum 3 seconds. Ethyl Alcohol is recommend to remove flux. Trichlorethylene type solvents must not be used (they may cause bubbles in the coating of the transistor chips, which can lift off bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ ηT=40% VDD Stage (W) (W) (°C/W) (A) (V) st 1 0.05 1.5 5.0 0.30 nd 12.5 1.5 9.0 2.4 1.50 2 rd 3 9.0 30.0 1.2 4.20 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.30A - 1.5W + 0.05W) x 5.0°C/W = Tcase + 11.5 °C Tch2 = Tcase + (12.5V x 1.50A - 9.0W + 1.50W) x 2.4°C/W = Tcase + 27.0 °C Tch3 = Tcase + (12.5V x 4.20A - 30.0W + 9.0W) x 1.2°C/W = Tcase + 37.8 °C For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature Tair=60°C and Pout=30W the required thermal resistance R th (case-air) = ( T case - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 41.5 °C Tch2 = Tair + 57.0 °C Tch3 = Tair + 67.8 °C 175°C maximum rating for the channel temperature ensures application under derated conditions. RA30H4452M MITSUBISHI ELECTRIC 7/9 2 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H4452M OBSERVE HANDLING PRECAUTIONS Output Power Control: Depending on linearity following 2 methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage VGG. When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing from the battery into the Drain. Around VGG=3.5V the output power and Drain current increases strongly. Around VGG=4V, latest at VGG=5V, the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity. Oscillation: To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip capacitor, located close to the module, and a 22µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) Is the load impedance ZL=50Ω ? c) Is the source impedance ZG=50Ω ? Frequent on/off switching: In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time thermally induced mechanical stress. Quality: MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating conditions exceeding those in Mobile Radios. The technology of this module is the result of more than 20 years experience, field proven in several 10 million Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which are caused by handling or operating conditions. Few degradation failures can be found. Keep safety first in your circuit Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RA30H4452M MITSUBISHI ELECTRIC 8/9 2 Dec 2002 SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: [email protected] Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: [email protected] Phone: +49-2102-486-0 Fax: +49-2102-486-3670 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: [email protected] Phone: +852 2510-0555 Fax: +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 25 Boulevard des Bouvets F-92741 Nanterre Cedex, France Email: [email protected] Phone: +33-1-55685-668 Fax: +33-1-55685-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road #3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: [email protected] Phone: +65 64 732 308 Fax: +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. 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Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085 Email: [email protected] Phone: 408-730-5900 Fax: 408-737-1129 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road Rydalmere, NSW 2116 Sydney, Australia Email: [email protected] Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 RA30H4452M MITSUBISHI ELECTRIC 9/9 2 Dec 2002