MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉 SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER SA01, SA02, SA04, SA07 OUTLINE DRAWING Dimensions in mm 4 MAX +0.5 15 0 1 2 3 4 3 MIN 8 MAX 10 MAX 2 1 5 0.5 3 1 0.5 1 4 × 3 = 12 1 5 2 4 3 1 2 3 4 5 MAIN THYRISTOR: ANODE MAIN THYRISTOR: GATE MAIN AND AUX. THYRISTOR: CATHODE AUX. THYRISTOR: GATE AUX. THYRISTOR: ANODE SA SERIES APPLICATION Automatic strobe flasher FAMILY CONSTITUTION Guide No. (ASA100) 25 Type Aux thyristor Commutating characteristics Application SA01 C M=700µF, ITM=200A, High sensitive IGT ≤=250µA SA02 C C=2.2µF High holding current IH ≥ 25mA 32 SA04 25 SA07 C M=1000µF, ITM=230A, C C=2.5µF C M=700µF, ITM=200A, C C=1.4µF Compact strobe High holding current IH ≥ 25mA Middle class strobe High sensitive IGT ≤ 250µA Built-in strobe MAXIMUM RATINGS (T a= –20 ~ +60 °C, unless otherwise noted) Symbol Parameter VDRM ✽1 Repetitive peak off-state voltage VDSM ✽1 Non-repetitive peak off-state voltage VRRM Repetitive peak reverse voltage – SA01 SA02 SA04 Main Aux Main Aux 480 600 480 600 SA07 Main Aux Main Aux 480 600 450 600 V 400 V V 400 Pulse current ability Unit A See electrical characteristics A IFGM Peak gate forward current Topr Operating ambient temperature –20 ~ +60 °C Tstg Storage temperature –40 ~ +125 °C 0.5 0.3 0.5 1.0 1.0 1.0 0.5 0.3 ✽1. Connect 1kΩ resistor between gate to cathode. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉 SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted) SA01 Parameter Symbol SA02 SA04 SA07 Main Aux Main Aux Main Aux Main Aux Unit µA IDRM Repetitive peak off-state current ✽1 100 20 100 100 100 100 100 20 IRRM Repetitive peak reverse current 100 20 100 100 100 100 100 20 µA IGT Gate trigger current 30 0.25 30 30 50 30 80 0.25 mA VGT Gate trigger voltage 1.5 1.0 1.5 1.5 2.0 1.5 1.5 1.0 V IH Holding current ✽2 — 1.0 — 25 — 25 — 1.0 mA ✽1. Connect 1kΩ resistor between gate to cathode. ✽2. Minimum value SR1FM υ trg 0 L t 22k υ trg VCM CM CC + − 47n i1 i5 1 10 2 10k SAOX iG t iG 4 3 47n iG 0 1k 5 10n 470 470 i1 0 IP t tw Fig. 1 Test circuit i5 0 t Fig. 2 The voltage and current waveforms SA120 1 2 3 1 4 5 5 MAIN THYRISTOR AUX THYRISTOR 2 4 3 Fig. 3 Pin position and Equivalent circuit Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉 SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER COMMUTATION CHARACTERISTICS IN STROBE APPLICATION SA series commutates at arbitrary conducting duration t w under following condition. (See Fig. 1, 2) Please confer following sheets in case that CM or ITM is different from mentioned value. (See shown under) COMMUTATING CHARACTERISTICS Symbol (Ta=25 °C, Single pulse operation) Parameter SA01 SA02 VCM Main capacitor charging voltage CM Main capacitor 700 ITM Peak on-state current 200 L Anode reactor CC Commutating capacitor SA07 Unit 1000 700 µF 230 200 SA04 V 350 2.2 A µH 25 1.4 2.5 µF NOTICE Please consider counterplans against induced noise across common impedance. (between common cathode 3 and the ground point of trigger cicuit for the auxiliary thyristor) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE MAIN THYRISTOR SA01,07 AUX THYRISTOR SA02,04 AUX THYRISTOR 101 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (T j = t°C) GATE TRIGGER VOLTAGE (T j = 25°C) GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C) 100 (%) PERFORMANCE CURVES GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 0.6 0.5 TYPICAL EXAMPLE 0.4 0.3 0.2 AUX THYRISTOR 0.1 0 –0.1 MAIN THYRISTOR –0.2 –0.3 –0.4 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉 SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER SA01,07 AUX THYRISTOR SA02,04 AUX THYRISTOR SA01,07 AUX THYRISTOR 103 7 MAIN 5 THYRISTOR 3 2 102 7 5 SA02,04 AUX THYRISTOR 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER PULSE WIDTH (µs) COMMUTATING CHARACTERISTICS (SA01,SA02) COMMUTATING CHARACTERISTICS (SA04) 1400 800 1200 0 120 140 160 180 1000 180 200 220 CC = 2.8µF CC = 2.6µF CC = 2.4µF 600 CC = 2.2µF 800 400 160 220 200 VCM = 350V L = 25µH Ta = 25°C SEE FIG.1 CC = 2.0µF CC = 2.1µF F CC = 2.2µ CC = 2.3µF CC = 2.0µF 200 CC = 1.9µF 400 CC = 1.8µF 600 MAIN CAPACITOR (µF) 1000 VCM = 350V Ta = 25°C L = 25µH SEE FIG.1 240 PEAK ON-STATE CURRENT (A) COMMUTATING CHARACTERISTICS (SA07) COMMUTATING CAPACITOR VS. AMBIENT TEMPERATURE 0 120 140 160 180 CC = 1.5µF CC = 1.4µF CC = 1.3µF CC = 1.2µF CC = 1.1µF 200 CC = 1.0µF 400 CC = 0.8µF CC = 0.9µF 600 200 PEAK ON-STATE CURRENT (A) 220 COMMUTATING CAPACITOR (Ta = t°C) COMMUTATING CAPACITOR (Ta = 25°C) 800 100 (%) PEAK ON-STATE CURRENT (A) 1000 MAIN CAPACITOR (µF) TYPICAL EXAMPLE JUNCTION TEMPERATURE (°C) CC = 1.7µF MAIN CAPACITOR (µF) 101 –20 –10 0 10 20 30 40 50 60 70 80 104 7 5 3 2 CC = 1.8µF 102 7 5 4 3 2 TYPICAL EXAMPLE 100 (%) 103 7 5 4 3 2 GATE TRIGGER CURRENT VS. GATE TRIGGER PULSE WIDTH GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) HOLDING CURRENT (T j = t°C) HOLDING CURRENT (T j = 25°C) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 1.8 1.7 260 TYPICAL EXAMPLE 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 10 20 30 40 50 60 70 80 90 100 AMBIENT TEMPERATURE (°C) Feb.1999