MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR03AM Dimensions in mm φ5.0 MAX 5.0 MAX 4.4 VOLTAGE CLASS TYPE NAME 2 3 12.5 MIN 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 1.3 1 3 2 • IT (AV) ........................................................................ 0.3A • VDRM ..............................................................400V/600V • IGT ......................................................................... 100µA 3.9 MAX 1.25 1.25 JEDEC : TO-92 APPLICATION Leakage protector, timer, gas ignitor MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 800 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage ✽1 400 600 V VDSM Non-repetitive peak off-state voltage ✽1 500 800 V VD (DC) DC off-state voltage ✽1 320 480 V Ratings Unit 0.47 A 0.3 A 20 A 1.6 A2s Peak gate power dissipation 0.5 W Average gate power dissipation 0.1 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.3 Tj Junction temperature Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Ta=47°C ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM PG (AV) VFGM for fusing Storage temperature Tstg — Weight Typical value A –40 ~ +110 °C –40 ~ +125 °C 0.23 g ✽1. With gate to cathode resistance RGK=1kΩ. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=110°C, V RRM applied — — 0.1 mA IDRM Repetitive peak off-state current Tj=110°C, V DRM applied, RGK=1kΩ — — 0.1 mA VTM On-state voltage Ta=25°C, I TM=4A, instantaneous value — — 1.8 V VGT Gate trigger voltage Tj=25°C, VD =6V, IT=0.1A ✽3 — — 0.8 V VGD Gate non-trigger voltage Tj=110°C, VD =1/2VDRM, RGK=1kΩ 0.2 — — IGT Gate trigger current Tj=25°C, VD =6V, IT=0.1A ✽3 1 — IH Holding current Tj=25°C, VD=12V, RGK=1kΩ — 1.5 3 R th (j-a) Thermal resistance Junction to ambient — — 180 100 ✽2 V µA mA °C/ W ✽2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. ✽3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 V1 RGK 1 2 VGT 1kΩ SWITCH 60Ω TUT 6V DC SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) MAXIMUM ON-STATE CHARACTERISTICS 101 7 Ta = 25°C 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 20 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 18 16 14 12 10 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE GATE VOLTAGE (V) 7 5 3 2 PGM = 0.5W VFGM = 6V 101 7 5 3 2 PG(AV) = 0.1W VGT = 0.8V (Tj = 25°C) IGT = 100µA (Tj = 25°C) 100 7 5 3 2 10–1 7 5 3 2 IFGM = 0.3A VGD = 0.2V 10–2 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 1022 3 5 GATE TRIGGER CURRENT (Tj=t°C) GATE TRIGGER CURRENT (Tj=25°C) 102 100 (%) GATE CHARACTERISTICS 103 7 5 3 2 TYPICAL EXAMPLE 102 7 5 3 2 101 7 5 3 2 100 –40 –20 GATE CURRENT (mA) DISTRIBUTION ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, 0.7 TYPICAL EXAMPLE IGT (25°C) = 35µA 0.6 0.5 0.4 0.3 0.2 0.1 AVERAGE POWER DISSIPATION (W) 0 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) 0.8 40 60 80 100 120 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 JUNCTION TEMPERATURE (°C) TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.5 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 0.4 θ = 30° 180° 120° 90° 60° 0.3 0.2 θ 360° 0.1 0 0 0.1 0.2 RESISTIVE, INDUCTIVE LOADS 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) GATE TRIGGER VOLTAGE (V) 0.9 20 JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 0 140 θ 120 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 100 80 60 40 θ = 30° 90° 180° 60° 120° 20 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR03AM LOW POWER USE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 120° 0.5 90° 60° θ = 30° 180° 0.4 0.3 0.2 θ 0.1 θ 360° 0 0 0.1 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 AMBIENT TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) NON-INSULATED TYPE, GLASS PASSIVATION TYPE RESISTIVE LOADS 0.2 0.3 0.4 0.5 140 θ 120 360° 80 60 40 θ 360° 0.1 120 0.1 0.2 0.1 0.2 0.3 0.4 0.5 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 NATURAL CONVECTION 140 θ 360° 120 θ = 30° 60° 100 80 60 40 RESISTIVE, INDUCTIVE 90° LOADS 120° 180° 270° DC 20 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE TYPICAL EXAMPLE RGK = 1kΩ 140 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) 100 (%) 160 0 0 AVERAGE ON-STATE CURRENT (A) 160 BREAKOVER VOLTAGE (RGK = rkΩ) BREAKOVER VOLTAGE (RGK = 1kΩ) 100 (%) 0 RESISTIVE, INDUCTIVE LOADS 0.3 0.4 0.5 θ = 30° 60° 90° 120° 180° 20 0 AMBIENT TEMPERATURE (°C) 0.2 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) AVERAGE POWER DISSIPATION (W) 0.3 RESISTIVE LOADS NATURAL CONVECTION 100 AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.5 270° 180° 120° 90° DC 0.4 60° θ = 30° θ 120 TYPICAL EXAMPLE Tj = 110°C 140 100 80 60 40 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR03AM LOW POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 200 RGK = 1kΩ 180 140 120 100 Tj = 25°C 80 60 40 Tj = 110°C 20 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 RGK = 1kΩ DISTRIBUTION TYPICAL EXAMPLE IGT (25°C) = 35µA ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 10µA 1.0mA # 2 26µA 1.1mA 400 300 #1 #2 200 100 VD = 12V, Tj = 25°C 0 10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 GATE TO CATHODE RESISTANCE (kΩ) 100 (%) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 500 HOLDING CURRENT (mA) HOLDING CURRENT (mA) 160 HOLDING CURRENT VS. JUNCTION TEMPERATURE REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 (%) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (µA) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 5 4 3 2 TYPICAL EXAMPLE IGT (DC) # 1 16µA # 2 65µA #1 103 7 5 4 3 2 #2 Tj = 25°C 102 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (µs) Feb.1999