MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 1.0±0.5 CR3EM 8 MAX TYPE NAME VOLTAGE CLASS 4 MAX 12 MIN 1.2±0.1 0.8 0.8 1.5 MIN 4.5 MAX 2.5 2.5 0.5 1.55±0.1 123 10 MAX 2 1 CATHODE 2 ANODE 3 GATE 3 • IT (AV) ........................................................................ 0.6A • VDRM ....................................................................... 400V • IGT ..........................................................................30mA 1 TO-202 APPLICATION Automatic strobe flasher MAXIMUM RATINGS Symbol Voltage class Parameter Unit 8 VRRM Repetitive peak reverse voltage 400 V VRSM Non-repetitive peak reverse voltage 500 V VR (DC) DC reverse voltage 320 V VDRM Repetitive peak off-state voltage 400 V VDSM Non-repetitive peak off-state voltage 600 V Ratings Unit 0.94 A 0.6 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive 70 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 20 A2s Peak gate power dissipation 2.0 W Average gate power dissipation 0.2 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 1 Tj Junction temperature Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Ta=43°C ITSM Surge on-state current I2t I2t PGM PG (AV) VFGM for fusing Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 1.1 g Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 0.1 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 0.1 mA VTM On-state voltage Tc=25°C, ITM =10A, instantaneous value — — 1.6 V VGT Gate trigger voltage Tj=25°C, VD=6V, IT=0.5A — — 1.5 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V IGT Gate trigger current Tj=25°C, VD=6V, IT=0.5A — — 30 mA IH Holding current Tj=25°C, VD=12V 25 45 — mA R th (j-a) Thermal resistance Junction to ambient — — 120 °C/ W MAXIMUM ON-STATE CHARACTERISTICS 102 7 Tc = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE VFGM = 6V PGM = 2W VGD = 1.5V 100 7 5 4 3 2 PG(AV) = 0.2W IGT = 30mA (Tj = 25°C) 10–1 1 10 2 3 4 5 7 102 2 3 4 5 7 103 100 (%) 101 7 5 4 3 2 GATE TRIGGER CURRENT (Tj=t°C) GATE TRIGGER CURRENT (Tj=25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS 103 7 TYPICAL EXAMPLE 5 4 3 2 102 7 5 4 3 2 101 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 1.4 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 1.2 DISTRIBUTION 1.0 TYPICAL EXAMPLE 0.8 0.6 0.4 0.2 AVERAGE POWER DISSIPATION (W) 0 –40 –20 0 20 40 60 80 100 120 140 160 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 JUNCTION TEMPERATURE (°C) TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 8 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 7 6 120° 180° 90° 5 θ = 30° 4 60° 3 θ 360° 2 1 0 0 1.0 2.0 RESISTIVE, INDUCTIVE LOADS 5.0 3.0 4.0 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) GATE TRIGGER VOLTAGE (V) 1.6 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 140 θ 120 360° 100 80 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION WITHOUT FIN 60 θ = 30° 60° 40 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3EM LOW POWER USE 180° 7 θ 6 360° θ 120° 90° RESISTIVE 5 60° LOADS θ = 30° 4 3 2 1 160 120 0 1.0 2.0 3.0 4.0 5.0 HOLDING CURRENT (T j = t°C) HOLDING CURRENT (T j = 25°C) 80 60 40 20 20 TYPICAL EXAMPLE 102 7 5 4 3 2 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE HOLDING CURRENT VS. GATE TRIGGER CURRENT 80 VD = 12V Ta = 25°C ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, HOLDING CURRENT (mA) HOLDING CURRENT (mA) 40 103 7 5 4 3 2 JUNCTION TEMPERATURE (°C) 160 60 60 θ = 30° 60° 40 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 101 –40 –20 0 20 40 60 80 100 120 140 160 0 –40 –20 0 20 40 60 80 100 120 140 160 80 80 HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 100 100 360° RESISTIVE LOADS NATURAL CONVECTION BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 140 120 120 AVERAGE ON-STATE CURRENT (A) TYPICAL EXAMPLE 140 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 WITHOUT FIN 140 θ θ AVERAGE ON-STATE CURRENT (A) 100 (%) 100 (%) 0 AMBIENT TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 8 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) AVERAGE POWER DISSIPATION (W) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 70 60 50 40 30 20 10 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TO CATHODE RESISTANCE (kΩ) GATE TRIGGER CURRENT (mA) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3EM LOW POWER USE 50 TURN-OFF TIME (µs) 45 40 35 30 25 20 15 10 5 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (mA) REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C) TURN-OFF TIME VS. GATE TRIGGER CURRENT 100 (%) NON-INSULATED TYPE, GLASS PASSIVATION TYPE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 tw 0.1s 103 7 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (µs) Feb.1999