Advanced Power MOSFET ■ ■ ■ !"#$%&% ■ $'%#&# ■ ()*%# # ■ !"#!+&##,-./01 21 ■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rain Current [A] -ID , Drain Current [A] 10-1 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 10-2 -1 10 100 100 150 oC 10-1 @ Notes : 1. VGS = 0 V 25 oC 2. VDS = -50 V 3. 250 µs Pulse Test 10-2 101 2 4 6 8 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] %& ! "!!#$# 10 12 -IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 15 VGS = -10 V 9 6 VGS = -20 V 3 o @ Note : TJ = 25 C 0 0 1 2 3 4 5 100 10-1 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC 25 oC 10-2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 6 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] ! Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd Capacitance [pF] 600 C iss 400 C oss C rss @ Notes : 1. VGS = 0 V 2. f = 1 MHz 200 00 10 101 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] 800 VDS = -80 V 10 VDS = -200 V VDS = -320 V 5 @ Notes : ID = -1.5 A 0 0 5 10 15 20 QG , Total Gate Charge [nC] P-CHANNEL POWER MOSFET '()#$ * +& * 2.5 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -75 @ Notes : 1. VGS = 0 V 2. ID = -250 µA -50 -25 0 25 50 75 100 125 150 2.0 1.5 1.0 @ Notes : 1. VGS = -10 V 2. ID = -0.75 A 0.5 0.0 -75 175 -50 -25 TJ , Junction Temperature [oC] 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] /-. 0 ,-.! * -ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 101 100 µs 1 ms 100 10 ms DC @ Notes : 1. TC = 25 oC 10-1 1.5 1.0 0.5 2. TJ = 150 oC 3. Single Pulse 101 102 0.0 25 103 50 75 100 125 150 Tc , Case Temperature [oC] -VDS , Drain-Source Voltage [V] Thermal Response *& D=0.5 0 10 0.2 @ Notes : 1. Zθ J C (t)=3.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) 0.1 0.05 10- 1 PDM 0.02 0.01 single pulse t1 θ 10-2 Z JC(t) , -ID , Drain Current [A] 2.0 t2 10- 5 10- 4 10- 3 10- 2 10- 1 t1 , Square Wave Pulse Duration 100 101 [sec] P-CHANNEL POWER MOSFET 12* !"!#$% %&$ 12* "3*#4#$ 12* P-CHANNEL POWER MOSFET 5)!#&6 #7# 12* & ' ! #$!%& " '''''''''''''''''''''''''' #$!$ ! 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. F1