FAIRCHILD FJN598JC

FJN598J
FJN598J
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
TO-92
1
1. Source 2. Gate 3. Drain
Si N-channel Junction FET
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VGDO
Gate-Drain Voltage
Parameter
Ratings
-20
Units
V
IG
ID
Gate Current
10
mA
Drain Current
1
PD
Power Dissipation
mA
150
mW
TJ
TSTG
Junction Temperature
150
°C
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVGDO
Parameter
Gate-Drain Breakdown Voltage
Test Condition
IG= -100uA
Min.
-20
Typ.
Max.
Units
V
-0.6
-1.5
V
350
µA
VGS(off)
Gate-Source Cut-off Voltage
VDS=5V, ID=1µA
IDSS
Drain Current
VDS=5V, VGS=0
100
lYFSl
Forward Transfer Admittance
VDS=5V, VGS=0, f=1MHz
0.4
CISS
Input Capacitance
VDS=5V, VGS=0, f=1MHz
3.5
pF
CRSS
Output Capacitance
VDS=5V, VGS=0, f=1MHz
0.65
pF
1.2
ms
IDSS Classification
Classification
A
B
C
IDSS(µA)
100 ~ 170
150 ~ 240
210 ~ 350
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
FJN598J
Typical Characteristics
500
1000
IDSS = 200µA
450
ID[µA], DRAIN CURRENT
ID[µA], DRAIN CURRENT
IDSS = 500µA
900
400
350
300
250
VGS = 0
200
150
VGS = -0.1V
100
700
600
VGS = 0
500
400
VGS = -0.1V
300
VGS = -0.2V
200
VGS = -0.2V
50
800
100
VGS = -0.4V
VGS = -0.3V
VGS = -0.3V
VGS = -0.4V
VGS = -0.5V
0
1
2
3
4
5
6
7
8
9
0
10
1
2
3
Figure 1. ID-VDS
lFSl [ms], FORWARD TRANSFER ADMITTANCE
VDS = 5V
ID[mA], DRAIN CURRENT
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-1.4
-1.2
-1.0
-0.8
6
7
8
9
10
-0.6
-0.4
-0.2
0.0
10
VDS = 5V
VGS = 0
f=1kHz
1
0.1
0.1
1
VGS[V], GATE-SOURCE VOLTAGE
IDSS[mA], DRAIN CURRENT
Figure 4. yFS-IDSS
Figure 3. ID-VGS
-10
100
VDS = 5V
ID = 1µA
-1
CISS[pF], INPUT CAPACITANCE
VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE
5
Figure 2. ID-VDS
1.6
0.0
-1.6
4
VDS[V], DRAIN-SOURCE VOLTAGE
VDS[V], DRAIN-SOURCE VOLTAGE
- 0.1
VGS = -0.6V
0
0
10
1
0.1
1
IDSS[mA], DRAIN CURRENT
Figure 5. VGS(off)-IDSS
©2002 Fairchild Semiconductor Corporation
1
10
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 6. CISS-VDS
Rev. B1, November 2002
FJN598J
Typical Characteristics (Continued)
200
VGS = 0
f = 1MHz
175
PD[mW], POWER DISSIPATION
Crss[pF], OUTPUT CAPACITANCE
10
1
150
125
100
75
50
25
0
0.1
1
0
10
50
75
100
125
150
Ta[ C], AMBIENT TEMPERATURE
Figure 7. CRSS-VDS
Figure 8. PD-TA
700
VNO:VCC =4.5V
VI = 0, A CURVE
RL = 1KΩ
IDSS:VDS=5V
-112
-114
-116
-118
-120
10
100
IDSS[µA], DRAIN CURRENT
Figure 9. VNO-IDSS
©2002 Fairchild Semiconductor Corporation
1000
ZO[Ω ], OUTPUT RESISTANCE
-110
VNO [dB], OUTPUT NOISE VOLTAGE
25
o
VDS[V], DRAIN-SOURCE VOLTAGE
ZO:VCC =4.5V
VIN = 10mV
f = 1kHz
IDSS:VDS=5V
600
500
400
300
200
10
100
1000
IDSS[µA], DRAIN CURRENT
Figure 10. ZO-IDSS
Rev. B1, November 2002
FJN598J
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1