Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA # " " % $ !!" ! . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15 – 100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Motorola Preferred Device 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60 – 80 VOLTS 300 WATTS MAXIMUM RATINGS Rating Symbol MJ14001 MJ14002 MJ14003 Unit 80 Vdc 80 Vdc Collector–Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter–Base Voltage VEBO 5 Vdc Collector Current — Continuous IC 60 Adc Base Current — Continuous IB 15 Adc Emitter Current — Continuous IE 75 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 300 17 Watts W/_C TJ, Tstg – 65 to + 200 _C Symbol Max Unit RθJC 0.584 _C/W Operating and Storage Junction Temperature Range CASE 197A–05 TO–204AE (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case PD, POWER DISSIPATION (WATTS) 360 330 270 210 150 90 30 0 0 40 80 120 160 TC, CASE TEMPERATURE (°C) 200 240 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — 1.0 1.0 — — 1.0 1.0 — — 1.0 1.0 — 1.0 30 15 5 — 100 — — — — 1 2.5 3 — — — 2 3 4 — 2000 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) MJ14001 MJ14002, MJ14003 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) MJ14001 MJ14402, MJ14003 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 V) (VCE = 80 Vdc, VBE(off) = 1.5 V) MJ14001 MJ14002, MJ14003 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MJ14001 MJ14002, MJ14003 Vdc ICEO mA ICEX mA ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO mA mA ON CHARACTERISTICS DC Current Gain (1) (IC = 25 Adc, VCE = 3.0 V) (IC = 50 Adc, VCE = 3.0 V) (IC = 60 Adc, VCE = 3.0 V) hFE Collector–Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 5.0 Adc) (IC = 60 Adc, IB = 12 Adc) VCE(sat) Base–Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 5.0 Adc) (IC = 60 Adc, IB = 12 Adc) VBE(sat) — Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob IC, COLLECTOR CURRENT (AMP) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 100 70 50 30 20 5.0 ms 2%. 1.0 ms 1.0 µs dc 10 7.0 5.0 3.0 2.0 TC = 25°C WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 0.7 0.5 0.3 0.2 pF There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 13. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v MJ14001 MJ14002, MJ14003 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 Figure 2. Maximum Rated Forward Biased Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data TYPICAL ELECTRICAL CHARACTERISTICS PNP MJ14001, MJ14003 300 200 300 200 100 100 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN NPN MJ14002 70 50 VCE = 3.0 V TJ = – 55°C TJ = 25°C TJ = 150°C 30 20 10 70 50 VCE = 3.0 V TJ = – 55°C TJ = 25°C TJ = 150°C 30 20 10 7.0 5.0 7.0 5.0 3.0 0.7 1.0 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) 50 3.0 0.7 1.0 70 5.0 7.0 10 2.0 3.0 20 IC, COLLECTOR CURRENT (AMPS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 2.8 TJ = 25°C IC = 60 A 2.0 1.6 IC = 25 A 1.2 0.8 IC = 10 A 0.4 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (AMPS) 5.0 7.0 10 2.4 TJ = 25°C IC = 60 A 2.0 1.6 IC = 25 A 1.2 0.8 IC = 10 A 0.4 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (AMPS) 5.0 7.0 10 Figure 6. Collector Saturation Region 2.8 2.8 TJ = 25°C 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 TJ = 25°C 2.4 V, VOLTAGE (VOLTS) 2.4 V, VOLTAGE (VOLTS) 70 2.8 Figure 5. Collector Saturation Region 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 3.0 V 0.4 0 0.7 50 Figure 4. DC Current Gain Figure 3. DC Current Gain 2.4 30 VCE(sat) @ IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) Figure 7. “On” Voltages Motorola Bipolar Power Transistor Device Data VBE(on) @ VCE = 3.0 V 0.4 VCE(sat) @ IC/IB = 10 50 70 0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 70 50 Figure 8. “On” Voltages 3 1.0 0.7 0.5 4.0 3.0 2.0 0.3 t, TIME ( µs) 0.2 t, TIME ( µs) ts tr td 0.1 0.07 0.05 0.03 0.01 0.7 1.0 tf 0.3 0.2 0.1 0.07 MJ14002 (NPN) MJ14001, MJ14003 (PNP) 0.02 1.0 0.7 0.5 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 50 70 MJ14002 (NPN) MJ14001, MJ14003 (PNP) 0.04 0.7 1.0 Figure 9. Turn–On Switching Times 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) C, CAPACITANCE (pF) 10000 7000 5000 RB tr ≤ 20 ns –12 V 3000 2000 0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 12. Switching Test Circuit D = 0.5 0.3 0.2 0.2 RθJC(t) = r(t) RθJC RθJC = 0.584°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.1 0.1 0.07 0.05 0.05 0.02 0.03 0.02 TO SCOPE tr ≤ 20 ns FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. 70 100 Figure 11. Capacitance Variation 1.0 0.7 0.5 RB tr ≤ 20 ns 10 to 100 µs VBB DUTY CYCLE ≈ 2.0% + 7.0 V MJ14002 (NPN) MJ14001, MJ14003 (PNP) 100 1.0 VCC – 30 V RL –12 V TJ = 25°C 200 +10 V Cob Cob 300 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TO SCOPE tr ≤ 20 ns 10 to 100 µs DUTY CYCLE ≈ 2.0% 1000 700 500 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 t, TIME (ms) 20 30 50 70 100 200 300 500 700 1000 2000 Figure 13. Thermal Response 4 70 VCC – 30 V RL 0 Cib 50 Figure 10. Turn–Off Switching Times + 2.0 V Cib 30 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N C –T– E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M –Y– L 2 H G B M T Y 1 –Q– 0.25 (0.010) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A–05 TO–204AE (TO–3) ISSUE J Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *MJ14001/D* MJ14001/D