Features Description • Ultrafast with Soft Recovery........................... <30ns The RURG1520CC is an ultrafast dual diode with soft recovery characteristics (trr<30ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. • Operating Temperature .................................. 175°C • Reverse Voltage..............................................200V • Avalanche Energy Rated • Switching Power Supplies This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, reducting power loss in the switching transistors. • Power Switching Circuits Formerly developmental type TA09926. • Planar Construction Applications • General Purpose Ordering Informations Part Number Package Brand RURG1520CC TO-247 RURG1520C Note: When ordering, use the entire part number. JEDEC STYLE TO-247 K ANODE 1 CATHODE ANODE 2 CATHODE (BOTTOM SIDE METAL) A2 A1 Absolute Maximum Ratings (Per Leg) T Symbol C = 25°C Parameter RURG1520C Units VRRM Peak Repetitive Reverse Voltage 200 V VRWM Working Peak Reverse Voltage 200 V VR DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current (TC = 157°C) 15 A IFRM Repetitive Peak Surge Current (Square Wave, 20kHz) 30 A IFSM Nonrepetitive Peak Surge Current (Halfwave, 1 phase, 60Hz) 200 A Maximum Power Dissipation 100 W Avalanche Energy (See Figures 8 and 9) 20 mJ -65 to 175 °C PD EAVL TSTG, TJ Operating and Storage Temperature ©2005 Fairchild Semiconductor Corporation RURG1520CC Rev. C1 1 www.fairchildsemi.com RURG1520CC 15A, 200V Ultrafast Dual Diode RURG1520CC 15A, 200V Ultrafast Dual Diode Symbol VF IR trr (Per Leg) TC = 25°C, unless otherwise specified Parameter Forward Voltage Reverse Leakage Reverse Recovery Time Test Conditions Min. Typ. Max. Units IF = 15A 1.05 V IF = 15A, TC = 150°C 0.85 V VR = 200V 100 µA VR = 200V, TC = 150°C 500 µA IF = 1A, dlF/dt = 100A/µs 30 ns IF = 15A, dlF/dt = 100A/µs 35 ns ta IF = 15A, dlF/dt = 100A/µs 20 ns tb IF = 15A, dlF/dt = 100A/µs 10 ns RθJC 1.5 °C/W DEFINITIONS VF = Instantaneous forwrd voltage (pw = 300µs, D = 2%) IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle 2 RURG1520CC Rev. C1 www.fairchildsemi.com RURG1520CC 15A, 200V Ultrafast Dual Diode Electrical Characteristics Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage 100 400 IR, REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 100 175oC 10 100oC 25oC 175oC 10 1.0 100oC 0.1 0.01 25oC 0.001 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 50 VF , FORWARD VOLTAGE (V) Figure 3. trr, ta and tb Curves vs Forward Current IF(AV) , AVERAGE FORWARD CURRENT (A) 40 t, TIME (ns) trr 30 ta tb 10 0 1 10 20 200 16 14 12 DC 10 SQ. WAVE 8 6 4 2 0 140 150 160 170 180 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) 3 RURG1520CC Rev. C1 150 Figure 4. Current Derating Curve 50 20 100 VR , REVERSE VOLTAGE (V) www.fairchildsemi.com RURG1520CC 15A, 200V Ultrafast Dual Diode Typical Performance Curves Figure 5. trr Test Circuit VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF Figure 6. trr Waveforms and Definitions L dIF IF DUT RG VGE CURRENT SENSE ta tb 0 + - IGBT t1 trr dt VDD 0.25 IRM IRM t2 Figure 7. Avalanche Energy Test Circuit Figure 8. Avalanche Current and Voltage Waveforms I = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L R CURRENT SENSE + VDD DUT - IL IL I V Q1 VDD t0 4 RURG1520CC Rev. C1 t1 t2 t www.fairchildsemi.com RURG1520CC 15A, 200V Ultrafast Dual Diode Test Circuits and Waveforms The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 RURG1520CC Rev. C1 www.fairchildsemi.com RURG1520CC 15A, 200V Ultrafast Dual Diode TRADEMARKS