FAIRCHILD RURD660

RURD660, RURD660S
Data Sheet
January 2002
6A, 600V Ultrafast Diodes
Features
The RURD660 and RURD660S are ultrafast diodes with soft
recovery characteristics (trr < 55ns). They have low forward
voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction.
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• Avalanche Energy Rated
Formerly developmental type TA49038.
• Power Switching Circuits
Applications
• Switching Power Supplies
• General Purpose
Ordering Information
PART NUMBER
• Planar Construction
PACKAGE
BRAND
RURD660
TO-251
RUR660
RURD660S
TO-252
RUR660
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A.
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
(FLANGE)
CATHODE
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
Absolute Maximum Ratings
CATHODE
ANODE
TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 155oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Maximum Lead Temperature for Soldering
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG
©2002 Fairchild Semiconductor Corporation
RURD660
RURD660S
600
600
600
6
UNITS
V
V
V
A
12
A
60
A
50
10
-65 to 175
W
mJ
oC
300
260
oC
oC
RURD660, RURD660S Rev. B
RURD660, RURD660S
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
SYMBOL
MIN
TYP
MAX
UNITS
IF = 6A
-
-
1.5
V
IF = 6A, TC = 150oC
-
-
1.2
V
VR = 600V
-
-
100
µA
VR = 600V, TC = 150oC
-
-
500
µA
IF = 1A, dIF/dt = 200A/µs
-
-
55
ns
IF = 6A, dIF/dt = 200A/µs
-
-
60
ns
ta
IF = 6A, dIF/dt = 200A/µs
-
28
-
ns
tb
IF = 6A, dIF/dt = 200A/µs
-
16
-
ns
QRR
IF = 6A, dIF/dt = 200A/µs
-
150
-
nC
VR = 10V, IF = 0A
-
25
-
pF
-
-
3
oC/W
VF
IR
trr
CJ
TEST CONDITION
RθJC
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
500
IR , REVERSE CURRENT (µA)
IF , FORWARD CURRENT (A)
30
10
100oC
25oC
175oC
1
0.5
0
0.5
1
1.5
2
2.5
VF , FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
©2002 Fairchild Semiconductor Corporation
175oC
100
10
100oC
1
0.1
25oC
0.01
0.001
0
100
200
300
400
500
600
VR , REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
RURD660, RURD660S Rev. B
RURD660, RURD660S
Typical Performance Curves
(Continued)
90
50
TC = 100oC, dIF/dt = 200A/µs
75
40
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
TC = 25oC, dIF/dt = 200A/µs
trr
30
ta
20
tb
10
trr
45
ta
30
tb
15
0
0.5
1
IF , FORWARD CURRENT (A)
0
0.5
6
FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
TC = 175oC, dIF/dt = 200A/µs
80
trr
60
40
ta
tb
20
0
0.5
1
IF , FORWARD CURRENT (A)
1
IF , FORWARD CURRENT (A)
6
FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT
100
t, RECOVERY TIMES (ns)
60
6
6
5
DC
4
SQ. WAVE
3
2
1
0
145
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
CJ , JUNCTION CAPACITANCE (pF)
75
60
45
30
15
0
0
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RURD660, RURD660S Rev. B
RURD660, RURD660S
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
DUT
CURRENT
SENSE
RG
IF
+
VGE
-
IGBT
t1
VDD
dIF
trr
dt
ta
tb
0
0.25 IRM
t2
IRM
FIGURE 8. trr TEST CIRCUIT
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
I = 1A
L = 20mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
t1
t2
t
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RURD660, RURD660S Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4