MOTOROLA MCM72CB64SG100

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
256KB and 512KB BurstRAM
Secondary Cache Module for
Pentium
The MCM72CB32SG and MCM72CB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.
The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge
memory module. The module uses four of Motorola’s MCM67C518 or
MCM67C618 BiCMOS BurstRAMs.
Bursts can be initiated with either address status processor (ADSP) or address
status controller (ADSC). Subsequent burst addresses are generated internal to
the BurstRAM by the burst advance (ADV) input pin.
Write cycles are internally self timed and are initiated by the rising edge of the
clock (K) input. Eight write enables are provided for byte write control.
The cache family is designed to interface with popular Pentium cache controllers with on board tag.
PD0 – PD2 are reserved for density and speed identification.
Order this document
by MCM72CB32/D
MCM72CB32
MCM72CB64
160–LEAD
CARD EDGE
CASE 1113–01
TOP VIEW
1
• Pentium–style Burst Counter on Board
• 160 Pin Card Edge Module
42
43
• Single 5 V ± 5% Power Supply
• All Inputs and Outputs are TTL Compatible
• Three State Outputs
• Byte Parity
• Byte Write Capability
• Fast Module Clock Rates: 66 MHz, 80 MHz, 100 MHz
• Decoupling Capacitors for each Fast Static RAM
80
• High Quality Multi–Layer FR4 PWB With Separate Power and Ground Planes
• I/Os are 3.3 V Compatible
• Burndy Connector, Part Number: CELP2X80SC3Z48
BurstRAM is a trademark of Motorola.
Pentium is a trademark of Intel Corp.
REV 1
5/95
 Motorola, Inc. 1995
MOTOROLA
FAST SRAM
MCM72CB32•MCM72CB64
1
PIN ASSIGNMENT
160–LEAD CARD EDGE MODULE
TOP VIEW
PD2
PD1
PD0
Cache
Size
Module
VSS
VSS
NC
256KB
72CB32SG
VSS
VSS
VSS
512KB
72CB64SG
PIN NAMES
A3 – A18 . . . . . . . . . . . . . . . . . . . . . . Address Inputs
K0, K1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock
W0 – W7 . . . . . . . . . . . . . . . . . . . . . . . . . . Byte Write
E0, E1 . . . . . . . . . . . . . . . . . . . . . . . . Module Enable
G0, G1 . . . . . . . . . . . . . . . . . Module Output Enable
DQ0 – DQ63 . . . . . . . . . . Cache Data Input/Output
DQP0 – DQP7 . . . . . . . . . Data Parity Input/Output
ADSC0, ADSC1 . . . . . . Controller Address Status
ADSP0, ADSP1 . . . . . . Processor Address Status
ADV0, ADV1 . . . . . . . . . . . . . . . . . . . Burst Advance
PD0 – PD2 . . . . . . . . . . . . . . . . . . Presence Detect
VCC5 . . . . . . . . . . . . . . . . . . . . . + 5 V Power Supply
VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ground
* No Connect for MCM72CB32/MCM72CB64
** No Connect for MCM72CB32
MCM72CB32•MCM72CB64
2
VSS
DQ63
VCC5
DQ61
VCC5
DQ59
DQ57
VSS
DQP7
DQ55
DQ53
DQ51
VSS
DQ49
DQ47
DQ45
DQ43
VSS
DQ41
DQP5
DQ39
DQ37
DQ35
VSS
DQ33
DQ31
DQ29
DQ27
DQ25
VSS
DQP3
DQ23
DQ21
VCC5
DQ19
VSS
DQ17
VCC5
DQ15
DQ13
VSS
DQ11
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
VSS
DQ62
VCC3*
DQ60
VCC3*
DQ58
DQ56
VSS
DQP6
DQ54
DQ52
DQ50
VSS
DQ48
DQ46
DQ44
DQ42
VSS
DQ40
DQP4
DQ38
DQ36
DQ34
VSS
DQ32
DQ30
DQ28
DQ26
DQ24
VSS
DQP2
DQ22
DQ20
VCC3*
DQ18
VSS
DQ16
VCC3*
DQ14
DQ12
VSS
DQ10
VCC5
DQ9
DQP1
VCC5
DQ7
DQ5
DQ3
DQ1
VSS
A3B
A4B
A5B
A6B
A7
VSS
A9
A11
A13
A15
A17
VSS
*A19
PD1
K0
*K2
VSS
WE7
WE5
WE3
WE1
VSS
ADSC1
E1
ADV1
G1
VCC5
ADSP1
VSS
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
VCC3*
DQ8
DQP0
VCC3*
DQ6
DQ4
DQ2
DQ0
VSS
A3A
A4A
A5A
A6A
A8
VSS
A10
A12
A14
A16
A18**
VSS
PD0
PD2
K1
K3*
VSS
WE6
WE4
WE2
WE0
VSS
ADSC0
E0
ADV0
G0
VCC3*
ADSP0
VSS
MOTOROLA FAST SRAM
64K x 72 BurstRAM MEMORY MODULE BLOCK DIAGRAM
MCM67C618
A7 – A18
A3A – A6A
12
4
LW
A4 – A15
A0 – A3
W0
8
ADSP0
ADSP
DQ0 – DQ7
ADSC0
ADSC
DQ8
ADV0
ADV
UW
K0
K
DQ9 – DQ16
G0
G
DQ17
E0
E
DQ0 – DQ7
DQP0
8
DQ8 – DQ15
DQP1
MCM67C618
LW
A4 – A15
A0 – A3
W1
W2
8
ADSP
DQ0 – DQ7
ADSC
DQ8
UW
ADV
K
DQ9 – DQ16
G
DQ17
DQ16 – DQ23
DQP2
8
W3
DQ24 – DQ31
DQP3
E
MCM67C618
A4 – A15
A3B – A6B
4
ADSP1
LW
A0 – A3
W4
8
ADSP
DQ0 – DQ7
ADSC1
ADSC
DQ8
ADV1
ADV
UW
K1
K
DQ9 – DQ16
G1
G
DQ17
E1
E
DQ32 – DQ39
DQP4
8
DQ40 – DQ47
DQP5
MCM67C618
LW
A4 – A15
A0 – A3
W5
W6
8
ADSP
DQ0 – DQ7
ADSC
DQ8
ADV
UW
K
DQ9 – DQ16
G
DQ17
DQ48 – DQ55
DQP6
8
W7
DQ56 – DQ63
DQP7
E
MOTOROLA FAST SRAM
MCM72CB32•MCM72CB64
3
32K x 72 BurstRAM MEMORY MODULE BLOCK DIAGRAM
A18
A7 – A17
A3A – A6A
NC
11
4
MCM67C518
W0
LW
A4 – A14
A0 – A3
8
ADSP0
ADSP
DQ0 – DQ7
ADSC0
ADSC
DQ8
ADV0
ADV
UW
K0
K
DQ9 – DQ16
G0
G
DQ17
E0
E
DQ0 – DQ7
DQP0
8
DQ8 – DQ15
DQP1
MCM67C518
LW
A4 – A14
A0 – A3
W1
W2
8
ADSP
DQ0 – DQ7
ADSC
DQ8
UW
ADV
K
DQ9 – DQ16
G
DQ17
DQ16 – DQ23
DQP2
8
W3
DQ24 – DQ31
DQP3
E
MCM67C518
A4 – A14
A3B – A6B
4
ADSP1
LW
A0 – A3
W4
8
ADSP
DQ0 – DQ7
ADSC1
ADSC
DQ8
ADV1
ADV
UW
K1
K
DQ9 – DQ16
G1
G
DQ17
E1
E
DQ32 – DQ39
DQP4
8
DQ40 – DQ47
DQP5
MCM67C518
LW
A4 – A14
A0 – A3
W5
W6
8
ADSP
DQ0 – DQ7
ADSC
DQ8
ADV
UW
K
DQ9 – DQ16
G
DQ17
DQ48 – DQ55
DQP6
8
W7
DQ56 – DQ63
DQP7
E
MCM72CB32•MCM72CB64
4
MOTOROLA FAST SRAM
MCM67C618 BLOCK DIAGRAM (See Note)
ADV
BURST LOGIC
INTERNAL
ADDRESS
Q0
BINARY
COUNTER
K
A0′
A0
Q1
A1′
CLR
ADSC
ADSP
64K × 18
MEMORY
ARRAY
16
A1
2
A1 – A0
ADDRESS
REGISTER
A0 – A15
A2 – A15
18
16
WRITE
REGISTER
UW
LW
9
DQ9 – DQ17
9
DATA–OUT
REGISTERS
OUTPUT
BUFFER
G
DQ0 – DQ8
9
DATA–IN
REGISTERS
ENABLE
REGISTER
E
9
9
9
NOTE: All registers are positive–edge triggered. The ADSC or ADSP signals control the duration of the burst and the start of the
next burst. When ADSP is sampled low, any ongoing burst is interrupted and a read (independent of W and ADSC) is performed using the new external address. Alternatively, an ADSP–initiated two cycle WRITE can be performed by asserting
ADSP and a valid address on the first cycle, then negating both ADSP and ADSC and asserting LW and/or UW with valid
data on the second cycle (see Single Write Cycle in WRITE CYCLES timing diagram).
When ADSC is sampled low (and ADSP is sampled high), any ongoing burst is interrupted and a read or write (dependent
on W) is performed using the new external address. Chip enable (E) is sampled only when a new base address is loaded.
After the first cycle of the burst, ADV controls subsequent burst cycles. When ADV is sampled low, the internal address
is advanced prior to the operation. When ADV is sampled high, the internal address is not advanced, thus inserting a wait
state into the burst sequence accesses. Upon completion of a burst, the address will wrap around to its initial state. See
BURST SEQUENCE TABLE. Write refers to either or both byte write enables (LW, UW).
BURST SEQUENCE TABLE (See Note)
External Address
A15 – A2
A1
A0
1st Burst Address
A15 – A2
A1
A0
2nd Burst Address
A15 – A2
A1
A0
3rd Burst Address
A15 – A2
A1
A0
NOTE: The burst wraps around to its initial state upon completion.
MOTOROLA FAST SRAM
MCM72CB32•MCM72CB64
5
SYNCHRONOUS TRUTH TABLE (See Notes 1, 2, and 3)
E
ADSP
ADSC
ADV
UW or LW
K
Address Used
Operation
H
L
X
X
X
L–H
N/A
Deselected
H
X
L
X
X
L–H
N/A
Deselected
L
L
X
X
X
L–H
External Address
Read Cycle, Begin Burst
L
H
L
X
L
L–H
External Address
Write Cycle, Begin Burst
L
H
L
X
H
L–H
External Address
Read Cycle, Begin Burst
X
H
H
L
L
L–H
Next Address
Write Cycle, Continue Burst
X
H
H
L
H
L–H
Next Address
Read Cycle, Continue Burst
X
H
H
H
L
L–H
Current Address
Write Cycle, Suspend Burst
X
H
H
H
H
L–H
Current Address
Read Cycle, Suspend Burst
NOTES:
1. X means Don’t Care.
2. All inputs except G must meet setup and hold times for the low–to–high transition of clock (K).
3. Wait states are inserted by suspending burst.
ASYNCHRONOUS TRUTH TABLE (See Notes 1 and 2)
Operation
G
I/O Status
Read
L
Data Out
Read
H
High–Z
Write
X
High–Z — Data In
Deselected
X
High–Z
NOTES:
1. X means Don’t Care.
2. For a write operation following a read operation, G must be high before the input data
required setup time and held high through the input data hold time.
ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
VCC
– 0.5 to + 7.0
V
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current (per I/O)
Iout
± 30
mA
Power Dissipation
PD
6.4
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to +70
°C
Power Supply Voltage
Voltage Relative to VSS for Any
Pin Except VCC
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maximum rated voltages to this high–impedance
circuit.
This device contains circuitry that will ensure
the output devices are in High–Z at power up.
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
Storage Temperature
MCM72CB32•MCM72CB64
6
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 5%, TA = 0 to + 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages referenced to VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
Input High Voltage
VIH
4.75
5.25
V
2.2
VCC + 0.3**
V
Input Low Voltage
VIL
– 0.5*
0.8
V
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20.0 ns) for I ≤ 20.0 mA.
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 20.0 ns) for I ≤ 20.0 mA.
DC CHARACTERISTICS AND SUPPLY CURRENTS
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Parameter
Ilkg(I)
—
± 1.0
µA
Output Leakage Current (G = VIH)
Ilkg(O)
—
± 1.0
µA
ICCA66
ICCA80
ICCA100
—
1100
1160
1240
mA
AC Standby Current (E = VIH, Iout = 0 mA, All Inputs = VIL and VIH,
VIL = 0.0 V and VIH ≥ 3.0 V, Cycle Time ≥ tKHKH min)
ISB1
—
300
mA
Output Low Voltage (IOL = + 8.0 mA)
VOL
—
0.4
V
AC Supply Current (G = VIH, E = VIL, Iout = 0 mA, All Inputs = VIL or VIH,
VIL = 0.0 V and VIH ≥ 3.0 V, Cycle Time ≥ tKHKH min)
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
3.3
V
NOTE: Good decoupling of the local power supply should always be used. DC characteristics are guaranteed for all possible Pentium bus cycles.
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Max
Unit
Cin
20
pF
Input Capacitance
(A7 – A18)
Input Capacitance
(A3 – A6, ADSPx, ADSCx, ADVx, Kx, Gx, Ex, Wx)
Cin
10
pF
(DQ0 – DQ63, DQP0 – DQP7)
CI/O
8
pF
Input/Output Capacitance
MOTOROLA FAST SRAM
MCM72CB32•MCM72CB64
7
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 5%, TA = 0 to + 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 ns
Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V
Output Load . . . . . . . . . . . . See Figure 1A Unless Otherwise Noted
READ/WRITE CYCLE TIMING (See Notes 1, 2, and 3)
MCM72CB64SG100
Parameter
MCM72CB64SG80
MCM72CB64SG66
Symbol
Min
Max
Min
Max
Min
Max
Unit
Cycle Time
tKHKH
10
—
12.5
—
15
—
ns
Clock Access Time
tKHQV
—
6
—
7
—
9
ns
Output Enable to Output Valid
tGLQV
—
5
—
5
—
6
ns
Clock High to Output Active
tKHQX1
2
—
2
—
2
—
ns
Clock High to Output Change
tKHQX2
2
—
2
—
2
—
ns
Output Enable to Output Active
tGLQX
1
—
1
—
1
—
ns
Output Disable to Q High–Z
tGHQZ
2
6
2
6
2
6
ns
Clock High to Q High–Z
tKHQZ
—
6
—
6
—
6
ns
Clock High Pulse Width
tKHKL
4
—
5
—
6
—
ns
Clock Low Pulse Width
tKLKH
4
—
5
—
6
—
ns
Notes
5
6
Setup Times:
Address
Address Status
Data In
Write
Address Advance
Chip Enable
tAVKH
tADSVKH
tDVKH
tWVKH
tADVVKH
tEVKH
2.5
—
2.5
—
2.5
—
ns
7
Hold Times:
Address
Address Status
Data In
Write
Address Advance
Chip Enable
tKHAX
tKHADSX
tKHDX
tKHWX
tKHADVX
tKHEX
0.5
—
0.5
—
0.5
—
ns
7
NOTES:
1. In setup and hold time W (write) refers to either one or both byte write enables LW and UW.
2. A read cycle is defined by UW and LW high or ADSP low for the setup and hold times. A write cycle is defined by LW or UW low and ADSP
high for the setup and hold times.
3. All read and write cycle timings are referenced from K or G.
4. G is a don’t care when UW or LW is sampled low.
5. Maximum access times are guaranteed for all possible Pentium external bus cycles.
6. Transition is measured ± 500 mV from steady–state voltage with load of Figure 1B. This parameter is sampled rather than 100% tested. At
any given voltage and temperature, tKHQZ max is less than tKHQZ1 min for a given device and from device to device.
7. This is a synchronous device. All addresses must meet the specified setup and hold times for ALL rising edges of K whenever ADSP or ADSC
is low, and the chip is selected. All other synchronous inputs must meet the specified setup and hold times for ALL rising edges of K when
the chip is enabled.Chip enable must be valid at each rising edge of clock for the device (when ADSP or ADSC is low) to remain enabled.
AC TEST LOADS
+5V
480 Ω
OUTPUT
OUTPUT
Z0 = 50 Ω
RL = 50 Ω
255 Ω
5 pF
VL = 1.5 V
Figure 1A
MCM72CB32•MCM72CB64
8
Figure 1B
MOTOROLA FAST SRAM
MOTOROLA FAST SRAM
MCM72CB32•MCM72CB64
9
Q
G
ADV
E
LW, UW
A
ADSC
ADSP
K
t KHQX1
t KHEX
t EVKH
t KHAX
t AVKH
t KHADSX
A1
t KHQV
t ADSVKH
t KHKH
SINGLE READ
Q(A1)
t GLQX
t GLQV
t KHADVX
t ADVVKH
t WVKH
t KHWX
A2
t KHADSX
t ADSVKH
t GHQZ
t KHKL
t KLKH
Q(A2)
Q(A2 +1)
t KHQX2
t KHQV
BURST READ
Q(A2 + 2)
A3
Q(A2 + 3)
Q(A2)
Q(A2 +1)
(BURST WRAPS AROUND
TO ITS INITIAL STATE)
ADSP STARTS NEW READ
(ADV SUSPENDS BURST)
READ CYCLES
Q(A3)
t KHQZ
A4
CHIP
DESELECT
MCM72CB32•MCM72CB64
10
MOTOROLA FAST SRAM
DATA OUT
DATA IN
G
ADV
E
LW, UW
ADDRESS
ADSC
ADSP
K
BURST READ
Q(An – 1)
t EVKH
t AVKH
t ADSVKH
Q(An)
A1
A2
t KLKH
t KHADSX
SINGLE WRITE
t GHQZ
D(A1)
t KHEX
D(A2)
D(A2 + 1)
D(A2 + 3)
ADSC STARTS NEW BURST
D(A2 + 2)
BURST WRITE
(WITH A SUSPENDED CYCLE)
D(A2 + 1)
ADV SUSPENDS BURST
W IS IGNORED FOR FIRST CYCLE WHEN ADSP INITIATES BURST
t KHAX
t ADSVKH
t KHKL
t KHADSX
t KHKH
WRITE CYCLES
D(A3)
t DVKH
t ADVVKH
t WVKH
A3
D(A3 + 2)
NEW BURST WRITE
D(A3 + 1)
t KHDX
t KHADVX
t KHWX
MOTOROLA FAST SRAM
MCM72CB32•MCM72CB64
11
Q
D
G
ADV
LW, UW
A
ADSP
K
t KHQX1
t AVKH
t KHAX
t ADVSKH
t KHADSX
A1
READ
t KHQV
Q(A1)
t KHKL
A2
D(A2)
WRITE
t GHQZ
t KHDX
t DVKH
t ADVKH
t KHADVX
t WVKH
t KHWX
t KHKH
t KLKH
t GLQX
A3
COMBINATION READ/WRITE CYCLES (E low, ADSC high)
Q(A3 + 1)
t KHQX2
BURST READ
Q(A3)
t KHQV
Q(A3 + 2)
APPLICATION EXAMPLE
DATA BUS
DATA
ADDRESS BUS
ADDRESS
CLOCK
Pentium
ADDR
CLK
ADDR
DATA
K0
K1
ADSC
W MCM67C618FN9
G0
G1
ADSP
ADV
K
CACHE
CONTROL
LOGIC
MCM72CB64SG66
ADS
CONTROL
512K Byte Burstable, Secondary Cache
Using MCM72CB64SG66 with a 75 MHz Pentium
Figure 2
ORDERING INFORMATION
(Order by Full Part Number)
72CB32
MCM 72CB64 XX
XX
Motorola Memory Prefix
Speed (66 = 66 MHz, 80 = 80 MHz,
100 = 100 MHz)
Package (SG = Gold Pad SIMM)
Part Number
Full Part Numbers — MCM72CB32SG66
MCM72CB64SG66
MCM72CB32•MCM72CB64
12
MCM72CB32SG80
MCM72CB64SG80
MCM72CB32SG100
MCM72CB64SG100
MOTOROLA FAST SRAM
PACKAGE DIMENSIONS
160–LEAD
CARD EDGE MODULE
CASE 1113–01
A
C
NOTE 4
E
ÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉ
COMPONENT
AREA
FULL R
B
80
–Y–
VIEW
AA
43
2X
42
AC
–X–
M
AB
NOTE 5
J
–T–
FRONT VIEW
ÉÉÉ
É
ÉÉÉ
É
ÉÉÉ
É
ÉÉÉ
É
ÉÉÉ
É
160X
R
W
160X
156X
L
T Y X
S
0.012 (0.3)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CARD THICKNESS APPLIES ACROSS TABS AND
INCLUDES PLATING AND/OR METALLIZATION.
4. DIMENSIONS C AND V DEFINE A
DOUBLE–SIDED MODULE.
5. DIMENSION AB DEFINES OPTIONAL
SINGLE–SIDED MODULE.
6. STRAIGHTNESS CALLOUT APPLIES TO TAB
AREA ONLY.
H
160X
K
G
ÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉ
VIEW AA
123
NOTE 6
SIDE VIEW
D
0.004 (0.1)
(N)
160
NOTE 4
F
L
R
V
P
1
122
COMPONENT
AREA
BACK VIEW
81
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
V
W
AB
AC
INCHES
MIN
MAX
4.330
4.350
1.290
1.310
–––
0.454
0.033
0.037
2.265
2.275
0.075 BSC
0.050 BSC
–––
0.030
0.055
0.069
0.210
–––
1.955
1.965
2.155
2.165
0.110 REF
0.125
–––
0.285
0.305
0.157
–––
0.040
0.060
–––
0.262
0.072
0.076
MILLIMETERS
MIN
MAX
109.98 110.49
32.77
33.27
–––
11.53
0.84
0.94
57.53
57.79
1.91 BSC
1.27 BSC
–––
0.51
1.40
1.75
5.33
–––
49.66
49.91
54.74
54.99
2.79 REF
3.18
–––
7.24
7.75
3.99
–––
1.02
1.52
–––
6.66
1.83
1.93
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA FAST SRAM
MCM72CB32•MCM72CB64
13
Literature Distribution Centers:
USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MCM72CB32•MCM72CB64
14
◊
CODELINE TO BE PLACED HERE
*MCM72CB32/D*
MCM72CB32/D
MOTOROLA FAST
SRAM