Order this document by MMDF3200Z/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS RDS(on) = 0.015 OHM WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Zener Protected Gates Provide Electrostatic Discharge Protection • Designed to withstand 200 V Machine Model and 2000 V Human Body Model • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SO–8 Surface Mount Package — Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Mounting Information for SO–8 Package Provided 7 8 CASE 751–06, Style 11 SO–8 N1–DRAIN N1–Source 1 8 N1–Drain N1–Gate 2 7 N1–Drain N2–Source 3 6 N2–Drain N2–Gate 4 5 N2–Drain N1–GATE 2 1 N1–SOURCE 5 6 TOP VIEW N2–DRAIN N2–GATE 4 3 N2–SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Max Unit VDSS VDGR 20 V 20 V Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous VGS TJ, Tstg Operating and Storage Temperature Range DEVICE MARKING D3200 ± 12 V – 55 to 150 °C ORDERING INFORMATION Device MMDF3200Z Reel Size Tape Width Quantity 13″ 12 mm embossed tape 4000 units This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 TMOS Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MMDF3200Z MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ 10 Seconds) Parameter Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) Total Power Dissipation @ TA = 25°C Linear Derating Factor Symbol Maximum Unit ID ID IDM PD 11.5 9.2 57.5 A A A 2.0 16 Watts mW/°C Thermal Resistance — Junction to Ambient RθJA 62.5 °C/W Continuous Source Current (Diode Current) IS TBD A When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ Steady State) Parameter Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) Total Power Dissipation @ TA = 25°C Linear Derating Factor Symbol Maximum Unit ID ID IDM PD 8.0 5.9 40 A A A 1.28 10.2 Watts mW/°C Thermal Resistance — Junction to Ambient RθJA 98 °C/W Continuous Source Current (Diode Current) IS TBD A Symbol Maximum Unit ID ID IDM PD 7.1 5.2 35.5 A A A 0.75 6.0 Watts mW/°C When mounted on minimum FR–4 or G–10 board (VGS = 10 V @ Steady State) Parameter Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) Total Power Dissipation @ TA = 25°C Linear Derating Factor Thermal Resistance — Junction to Ambient RθJA 166 °C/W Continuous Source Current (Diode Current) IS TBD A (1) Repetitive rating; pulse width limited by maximum junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MMDF3200Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 20 — — TBD — — — — — — 1.0 10 — TBD 1.0 0.5 — 0.8 TBD 1.2 — — — TBD TBD 15 25 gFS 5.0 TBD — Mhos Ciss — TBD TBD pF Coss — TBD TBD Crss — TBD TBD td(on) — TBD TBD tr — TBD TBD td(off) — TBD TBD tf — TBD TBD QT — TBD TBD Q1 — TBD — Q2 — TBD — Q3 — TBD — VSD — — TBD TBD 1.2 — Vdc trr — TBD — ns ta — TBD — tb — TBD — QRR — TBD — OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc mA ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 11.5 Adc) (VGS = 2.5 Vdc, ID = 5.9 Adc) RDS(on) Forward Transconductance (VDS = 8.0 Vdc, ID = 3.0 Adc) Vdc mV/°C mΩ DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 15 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 16 Vdc, 11.5 Adc, Vd ID = 11 5 Ad VGS = 4.5 4 5 Vdc, Vdc RG = 10 Ω)) Fall Time Gate Charge See Figure 8 ((VDS = 16 Vdc, Vd , ID = 11 11.5 5 Ad Adc,, VGS = 4.5 Vdc) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 11.5 Adc, VGS = 0 Vdc) (IS = 11.5 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time ((IS = 11.5 11 5 Adc, Ad , VGS = 0 Vdc, Vd , dIS/dt = 100 A/µs) Reverse Recovery Stored Charge µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. Motorola TMOS Power MOSFET Transistor Device Data 3 MMDF3200Z PACKAGE DIMENSIONS D A 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C 5 0.25 H E M B M 1 4 h B e X 45 _ q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S DIM A A1 B C D E e H h L q CASE 751–06 ISSUE T MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 Motorola reserves the right to make changes without further notice to any products herein. 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