MOTOROLA MTB50N06EL

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SEMICONDUCTOR TECHNICAL DATA

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N–Channel Enhancement–Mode Silicon Gate
Motorola Preferred Device
TMOS POWER FET
LOGIC LEVEL
50 AMPERES
60 VOLTS
RDS(on) = 0.028 OHM
These TMOS Power FETs are designed for high speed, low loss
power switching applications such as switching regulators, converters, solenoid and relay drivers. This Logic Level Series part is
specified to operate with level logic gate–to–source voltage of 5 volt
and 4 volt.
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.028 Ω max
• Replace External Zener Transient Suppressor — Absorbs High
Energy in the Avalanche Mode
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number

D
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
CASE 418B–02, Style 2
D2PAK
S
Symbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
Gate–Source Voltage — Continuous
VGS
±15
Vdc
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
50
28
142
Adc
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size
PD
125
1.0
2.5
Watts
W/°C
Watts
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vpk, IL = 50 Apk, L = 0.32 mH, RG = 25 Ω )
EAS
400
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
RθJC
RθJA
RθJA
1.0
62.5
50
°C/W
TL
260
°C
Rating
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Apk
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET, Designer’s and L2TMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
TMOS
Motorola
Motorola, Inc.
1994 Power MOSFET Transistor Device Data
1
MTB50N06EL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
60
—
—
64
—
—
Vdc
mV/°C
—
—
—
—
10
100
—
—
100
nAdc
1.0
—
—
4.78
2.0
—
Vdc
mV/°C
—
—
—
—
0.028
0.039
Ohm
—
—
—
—
1.68
1.40
gFS
17
—
—
mhos
Ciss
—
3100
4340
pF
Coss
—
1065
1491
Crss
—
260
520
td(on)
—
21
42
tr
—
365
730
td(off)
—
55
110
tf
—
150
300
QT
—
52
73
Q1
—
13
—
Q2
—
34
—
Q3
—
27
—
—
—
1.52
1.1
2.5
—
trr
—
200
—
ns
Internal Drain Inductance
(Measured from the tab to center of die)
Ld
—
3.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.1″ from package to source bond pad)
Ls
—
7.5
—
nH
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0)
(VDS = 60 Vdc, VGS = 0, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0)
IGSS
µAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain–Source On–Resistance
(VGS = 5.0 Vdc, ID = 25 Adc)
(VGS = 4.0 Vdc, ID = 25 Adc)
RDS(on)
Drain–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 50 Adc)
(ID = 25 Adc, TJ = 125°C)
VDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 25 Adc)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 25 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc,
RG = 9.1 Ω)
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc)
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
VSD
(IS = 50 Adc, VGS = 0)
(IS = 50 Adc, VGS = 0, TJ = °C)
Reverse Recovery Time
(IS = 50 Adc, VGS = 0 ,
dIS/dt = 100 A/µs)
Vdc
INTERNAL PACKAGE INDUCTANCE
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
MTB50N06EL
PACKAGE DIMENSIONS
C
E
V
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
S
1
2
3
-TSEATING
PLANE
STYLE 2:
PIN 1.
2.
3.
4.
K
J
G
H
D 3 PL
0.13 (0.005)
M
T
GATE
DRAIN
SOURCE
DRAIN
DIM
A
B
C
D
E
G
H
J
K
S
V
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.100 BSC
0.080 0.110
0.018 0.025
0.090 0.110
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60 15.88
1.14
1.40
CASE 418B–02
ISSUE B
Motorola TMOS Power MOSFET Transistor Device Data
3
MTB50N06EL
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
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*MTB50N06EL/D*
Motorola TMOS Power MOSFET Transistor
Device Data
MTB50N06EL/D