MOTOROLA MMFT3055V

Order this document
by MMFT3055V/D
SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
TMOS POWER FET
1.7 AMPERES
60 VOLTS
RDS(on) = 0.130 OHM
TM
D
4
G
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E–FET Predecessors
1
2
3
S
CASE 318E–04, Style 3
TO–261AA
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
• Available in 12 mm Tape & Reel
Use MMFT3055VT1 to order the 7 inch/1000 unit reel
Use MMFT3055VT3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
VDSS
VDGR
VGS
VGSM
60
Vdc
60
Vdc
± 20
± 25
Vdc
Vpk
Drain Current – Continuous
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
1.7
1.4
6.0
Adc
Total PD @ TA = 25°C mounted on 1” sq. Drain pad on FR–4 bd material
Total PD @ TA = 25°C mounted on 0.70” sq. Drain pad on FR–4 bd material
Total PD @ TA = 25°C mounted on min. Drain pad on FR–4 bd material
Derate above 25°C
PD
2.0
1.7
0.9
6.3
Watts
mW/°C
TJ, Tstg
EAS
– 55 to 175
°C
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 3.4 Apk, L = 10 mH, RG = 25 Ω )
Thermal Resistance
– Junction to Ambient on 1” sq. Drain pad on FR–4 bd material
– Junction to Ambient on 0.70” sq. Drain pad on FR–4 bd material
– Junction to Ambient on min. Drain pad on FR–4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Apk
mJ
58
°C/W
RθJA
RθJA
RθJA
TL
70
88
159
260
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
TMOS
 Motorola
Motorola, Inc.
1996
Power MOSFET Transistor Device Data
1
MMFT3055V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
60
—
—
63
—
—
Vdc
mV/°C
—
—
—
—
10
100
—
—
100
nAdc
2.0
—
2.8
5.6
4.0
—
Vdc
mV/°C
—
0.115
0.13
Ohm
—
—
—
—
0.27
0.25
gFS
1.0
2.7
—
mhos
Ciss
—
360
500
pF
Coss
—
110
150
Crss
—
25
50
td(on)
—
8.0
20
tr
—
9.0
20
td(off)
—
32
60
tf
—
18
40
QT
—
13
20
Q1
—
2.0
—
Q2
—
5.0
—
Q3
—
4.0
—
—
—
0.85
0.7
1.6
—
trr
—
40
—
ta
—
34
—
tb
—
6.0
—
QRR
—
0.089
—
—
4.5
—
—
7.5
—
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
µAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 0.85 Adc)
RDS(on)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 1.7 Adc)
(VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 1.7 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 1.7 Adc,
VGS = 10 Vdc)
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
VSD
Vdc
ns
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
nH
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
MMFT3055V
PACKAGE DIMENSIONS
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
B
1
2
3
D
L
G
J
C
0.08 (0003)
M
H
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
K
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
CASE 318E–04
ISSUE H
Motorola TMOS Power MOSFET Transistor Device Data
3
MMFT3055V
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided
in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent
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situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application,
Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered
trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
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P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
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6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
4
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*MMFT3055V/D*
Motorola TMOS Power MOSFET Transistor
Device Data
MMFT3055V/D