Order this document by MMDF3207/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS RDS(on) = 33 mW WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications • Characterized Over a Wide Range of Power Ratings • Logic Level Gate Drive — Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, with Soft Recovery • IDSS Specified at Elevated Temperature • Miniature SO–8 Surface Mount Package — Saves Board Space DEVICE MARKING D3207 CASE 751–06, Style 13 SO–8 S SOURCE 1 1 8 DRAIN 1 GATE 1 2 7 DRAIN 1 SOURCE 2 3 6 DRAIN 2 GATE 2 4 5 DRAIN 2 G TOP VIEW D ORDERING INFORMATION Device MMDF3207R2 Reel Size Tape Width Quantity 13″ 12 mm embossed tape 2500 units This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. TMOS Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MMDF3207 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Characteristics Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MW) Gate–to–Source Voltage — Continuous 1 Inch Square @ 10 seconds on FR–4 or G–10 PCB 1 Inch Square @ Steady State on FR–4 or G–10 PCB Minimum Pad @ Steady State on FR–4 or G–10 PCB Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) Operating and Storage Temperature Range Symbol Maximum Unit VDSS VDGR VGS RTHJA PD 20 12 ± 12 V 62.5 2.0 16 7.8 5.7 40 °C/W Watts mW/°C A A A 98 1.28 10.2 6.2 4.6 35 °C/W Watts mW/°C A A A 166 0.75 6.0 4.8 3.5 30 °C/W Watts mW/°C A A A –55 to 150 °C ID ID IDM RTHJA PD ID ID IDM RTHJA PD ID ID IDM TJ, Tstg (1) Repetitive rating; pulse width limited by maximum junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MMDF3207 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 20 — — TBD — — — — — — 1.0 5.0 — — 100 0.6 — — TBD — — — — TBD TBD 33 50 gFS — TBD — Mhos Ciss — TBD TBD pF Coss — TBD TBD Crss — TBD TBD td(on) — TBD TBD tr — TBD TBD td(off) — TBD TBD tf — TBD TBD td(on) — TBD TBD tr — TBD TBD td(off) — TBD TBD tf — TBD TBD QT — TBD TBD Q1 — TBD — Q2 — TBD — Q3 — TBD — VSD — — TBD TBD 1.2 — Vdc trr — TBD — ns ta — TBD — tb — TBD — QRR — TBD — OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage(1) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C) IDSS Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage(1) (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance(1) (VGS = 4.5 Vdc, ID = 7.8 Adc) (VGS = 2.5 Vdc, ID = 6.2 Adc) RDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 7.8 Adc)(1) Vdc mV/°C mΩ DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 15 Vdc, Vdc VGS = 0 V, V f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDS = 10 Vdc, Vd ID = 1.0 1 0 Adc, Ad VGS = 10 Vdc Vdc, RG = 6.0 Ω))(1) Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 10 Vdc, Vd ID = 1.0 1 0 Adc, Ad VGS = 4.5 4 5 Vdc, Vdc RG = 6.0 Ω))(1) Fall Time Gate Charge ((VDS = 10 Vdc, Vd , ID = 7.8 7 8 Adc, Ad , VGS = 4.5 Vdc)(1) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 1.7 Adc, VGS = 0 Vdc)(1) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time 1.7 7 Adc, Ad , VGS = 0 Vdc, Vd , ((IS = 1 dIS/dt = 100 A/µs)(1) Reverse Recovery Stored Charge µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperatures. (3) Repetitive rating; pulse width limited by max. junction temperature. Motorola TMOS Power MOSFET Transistor Device Data 3 MMDF3207 PACKAGE DIMENSIONS D A 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C 5 0.25 H E M B M 1 4 h B e X 45 _ q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S DIM A A1 B C D E e H h L q CASE 751–06 ISSUE T MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ STYLE 13: PIN 1. 2. 3. 4. 5. 6. 7. 8. N.C. SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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