Order this document by MTSF3203/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Miniature Micro8 Surface Mount Package — Saves Board Space • Extremely Low Profile (<1.1 mm) for thin applications such as PCMCIA cards • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for Micro8 Package Provided DEVICE MARKING 3A SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM CASE 846A–02, Style 1 Micro8 D G Source 1 8 Drain Source 2 7 Drain Source 3 6 Drain Gate 4 5 Drain Top View S ORDERING INFORMATION Device MTSF3203R2 Reel Size Tape Width Quantity 13″ 12 mm embossed tape 4000 units Preferred devices are Motorola recommended choices for future use and best overall value. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Bergquist Company. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. TMOS Motorola Motorola, Inc. 1998 Power MOSFET Transistor Device Data 1 MTSF3203 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous 1 inch SQ. FR–4 or G–10 PCB Figure 1 below Steady State Minimum FR–4 or G–10 PCB Figure 2 below Steady State Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 4.9 Apk, L = TBD mH, RG = 25 W) Symbol Max Unit VDSS VDGR VGS 20 V 20 V RTHJA PD ID ID IDM RTHJA PD ID ID IDM TJ, Tstg ± 12 V 70 1.79 14.29 4.9 3.9 24.4 °C/W Watts mW/°C A A A 160 0.78 6.25 3.2 2.5 16 °C/W Watts mW/°C A A A – 55 to 150 EAS °C mJ TBD (1) Repetitive rating; pulse width limited by maximum junction temperature. Figure 1. 1.0 Inch Square FR–4 or G–10 PCB 2 Figure 2. Minimum FR–4 or G–10 PCB Motorola TMOS Power MOSFET Transistor Device Data MTSF3203 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 20 — — TBD — — — — — — 1.0 25 — — 100 1.0 — TBD TBD — — — — TBD TBD 40 50 gFS 2.0 — — Mhos Ciss — TBD — pF Coss — TBD — Crss — TBD — td(on) — TBD — tr — TBD — td(off) — TBD — tf — TBD — td(on) — TBD — tr — TBD — td(off) — TBD — tf — TBD — QT — TBD TBD Q1 — TBD — Q2 — TBD — Q3 — TBD — — — TBD TBD 1.0 — trr — TBD — ta — TBD — tb — TBD — QRR — TBD — OFF CHARACTERISTICS (Cpk ≥ 2.0) Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) (1) (3) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) (Cpk ≥ 2.0) Static Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 4.9 Adc) (VGS = 2.5 Vdc, ID = 3.9 Adc) (Cpk ≥ 2.0) (3) (3) Forward Transconductance (VDS = 10 Vdc, ID = 4.9 Adc) VGS(th) Vdc RDS(on) mV/°C mΩ DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 16 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time ((VDS = 10 Vdc, Vd , ID = 4.9 4 9 Adc, Ad , VGS = 4.5 Vdc, RG = 6 Ω) (1) Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time ((VDD = 10 Vdc, Vd , ID = 3.9 3 9 Adc, Ad , VGS = 2.5 Vdc, RG = 6 Ω) (1) Fall Time Gate Charge ((VDS = 10 Vdc, Vd , ID = 4.9 4 9 Adc, Ad , VGS = 4.5 Vdc) ns ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 1.5 Adc, VGS = 0 Vdc) (1) (IS = 1.5 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 1 1.5 5 Adc Adc, VGS = 0 Vdc, Vdc dIS/dt = 100 A/µs) (1) Reverse Recovery Storage Charge VSD Vdc ns µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Max limit – Typ Cpk = 3 x SIGMA Motorola TMOS Power MOSFET Transistor Device Data 3 MTSF3203 INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. 0.041 1.04 0.208 5.28 0.015 0.38 0.126 3.20 0.0256 0.65 inches mm Micro8 POWER DISSIPATION The power dissipation of the Micro8 is a function of the input pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the Micro8 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 0.78 Watts. PD = 150°C – 25°C = 0.78 Watts 160°C/W The 160°C/W for the Micro8 package assumes the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 0.78 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. 4 • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola TMOS Power MOSFET Transistor Device Data MTSF3203 TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 3 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 6 VENT STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 “SPIKE” “SOAK” 170°C STEP 7 COOLING 205° TO 219°C PEAK AT SOLDER JOINT 160°C 150°C 150°C 100°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 3. Typical Solder Heating Profile Motorola TMOS Power MOSFET Transistor Device Data 5 MTSF3203 TAPE & REEL INFORMATION Micro8 Dimensions are shown in millimeters (inches) 1.60 (.063) 1.50 (.059) 2.05 (.080) 1.95 (.077) PIN NUMBER 1 4.10 (.161) 3.90 (.154) B B 1.85 (.072) 1.65 (.065) A 0.35 (.013) 0.25 (.010) 5.55 (.218) 5.45 (.215) 12.30 11.70 (.484) (.461) 3.50 (.137) 3.30 (.130) 1.60 (.063) 1.50 (.059) TYP. A FEED DIRECTION 8.10 (.318) 7.90 (.312) 1.50 (.059) 1.30 (.052) SECTION A–A 5.40 (.212) 5.20 (.205) SECTION B–B NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 18.4 (.724) MAX. NOTE 3 13.2 (.52) 12.8 (.50) 330.0 (13.20) MAX. NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 3. INCLUDES FLANGE DISTORTION AT OUTER EDGE. 4. DIMENSION MEASURED AT INNER HUB. 6 50.0 (1.97) MIN. 14.4 (.57) 12.4 (.49) NOTE 4 Motorola TMOS Power MOSFET Transistor Device Data MTSF3203 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. –A– –B– K PIN 1 ID G D 8 PL 0.08 (0.003) –T– M T B S A S SEATING PLANE C 0.038 (0.0015) H L J DIM A B C D G H J K L MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 ––– 1.10 0.25 0.40 0.65 BSC 0.05 0.15 0.13 0.23 4.75 5.05 0.40 0.70 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. INCHES MIN MAX 0.114 0.122 0.114 0.122 ––– 0.043 0.010 0.016 0.026 BSC 0.002 0.006 0.005 0.009 0.187 0.199 0.016 0.028 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN CASE 846A–02 ISSUE D MICRO8 Motorola TMOS Power MOSFET Transistor Device Data 7 MTSF3203 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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