Freescale Semiconductor
Technical Data
MW4IC915
Rev. 5, 3/2005
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage
structure. Its wideband On−Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N−CDMA and W−CDMA.
Final Application
• Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,
Pout = 15 Watts CW, Full Frequency Band (860−960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA,
IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869−894 MHz
and 921−960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = −65 dBc
Spectral Regrowth @ 600 kHz Offset = −83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On−Chip Current Mirror gm Reference FET for Self Biasing Application(1)
• Integrated ESD Protection
• N Suffix Indicates Lead−Free Terminations
• 200°C Capable Plastic Package
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
860 − 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N−CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329−09
TO−272 WB−16
PLASTIC
MW4IC915NBR1(MBR1)
CASE 1329A−03
TO−272 WB−16 GULL
PLASTIC
MW4IC915GNBR1(GMBR1)
!
"
(Top View)
MW4IC915NBR1
MW4IC915GNBR1
MW4IC915MBR1
MW4IC915GMBR1
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1987.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
−0.5. +65
Vdc
Gate−Source Voltage
VGS
−0.5. +15
Vdc
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
RθJC
°C/W
GSM Application
(Pout = 15 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
7.3
1.7
GSM EDGE Application
(Pout = 7.5 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
7.3
1.8
CDMA Application
(Pout = 3.75 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
7.4
1.9
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22−A113, IPC/JEDEC J−STD−020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDS = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 15 W PEP,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two−Tone
Power Gain
Gps
29
31
—
dB
Power Added Efficiency
PAE
29
31
—
%
Intermodulation Distortion
IMD
—
−40
−29
dBc
Input Return Loss
IRL
—
−15
−10
dB
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1955.
(continued)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued )
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz<Frequency>960 MHz
∆IQT
—
±5
—
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW
GF
—
0.2
—
dB
Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW
Φ
—
±0.6
—
°
Delay
—
2.5
—
ns
∆Φ
—
±15
—
°
Quiescent Current Accuracy over Temperature
with 1.8 kΩ Gate Feed Resistors (−10 to 85°C) (1)
Delay @ Pout = 3 W CW Including Output Matching
Part−to−Part Phase Variation @ Pout = 3 W CW
Typical GSM/GSM EDGE Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA,
869 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
P1dB
—
20
—
Watts
Power Gain @ Pout = 15 W CW
Gps
—
30
—
dB
Power Added Efficiency @ Pout = 15 W CW
PAE
—
44
—
%
Input Return Loss @ Pout = 15 W CW
IRL
—
−15
—
dB
Error Vector Magnitude @ Pout = 3 W Avg. including
0.6% rms source EVM
EVM
—
1.5
—
% rms
Spectral Regrowth at 400 kHz Offset @ Pout = 3 W Avg.
SR1
—
−65
—
dBc
Spectral Regrowth at 600 kHz Offset @ Pout = 3 W Avg.
SR2
—
−83
—
dBc
1. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1977.
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
3
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Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
PCB
0.086″, 50 W Microstrip
0.133″ x 0.236″ Microstrip
0.435″ x 0.283″ Microstrip
0.171″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.157″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.394″ x 0.088″ Microstrip
0.181″ x 0.088″ Microstrip
Taconic TLX8, 0.030″, εr = 2.55
Figure 3. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Schematic
Table 6. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6, C9, C14
22 mF, 35 V Tantalum Chip Capacitors
TAJE226M035R
AVX
C2, C5, C8, C11
1000 pF Chip Capacitors
100B102JCA500X
ATC
C3, C4, C7, C10, C16
22 pF Chip Capacitors
100B220JCA500X
ATC
C12, C13
10 pF Chip Capacitors
100B100JCA500X
ATC
C15
10 mF Tantalum Chip Capacitor
T491X226K035AS4394
Kemet
L1
12.5 nH Inductor
M1, M2, M3, M4
0.283″, 90_ Mitered Microstrip Bends
R1, R2
10 kΩ, 1/4 W Chip Resistor (1206)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
4
RF Device Data
Freescale Semiconductor
MW4IC915MB
Rev 0
"
(
!
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Component Layout
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
5
*
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Z1
Z2
Z3
Z4
0.681″ x 0.039″, 50 W Microstrip
0.157″ x 0.228″ Microstrip
0.468″ x 0.157″ Microstrip
0.220″ x 0.157″ Microstrip
Z5
Z6
Z7
PCB
0.566″ x 0.043″ Microstrip
0.165″ x 0.043″ Microstrip
0.078″ x 0.043″ Microstrip
Taconic RF35, 0.02″, εr = 3.5
Figure 5. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Reference Board Schematic
Table 7. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Reference Board Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C15
10 pF Chip Capacitors (0805), ACCU−P
08051J100GBT
AVX
C2
5.6 pF Chip Capacitor (0805), ACCU−P
08051J5R6BBT
AVX
C3, C4, C9, C11, C13
33 pF Chip Capacitors (0805), ACCU−P
08051J330GB
AVX
C5, C10, C12, C14
10 nF Chip Capacitors (0805)
08055C103KAT
AVX
C6, C7, C8
22 mF, 35 V Tantalum Capacitors
TAJE226MO35R
AVX
C16, C17
100 nF Chip Capacitors (0805)
08055C104KAT
AVX
P1, P2
5 kΩ Potentiometer CMS Cermet Multi−turn
3224W
Bourns
R1, R2, R3, R4, R5
0 Ω, 1/8 W Chip Resistors (0805)
R6, R7
10 kΩ, 1/4 W Chip Resistors (1206)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
6
RF Device Data
Freescale Semiconductor
'&
"
!
%
MW4IC915MB
Rev 0
%
'&
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 6. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Reference Board Component Layout
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
7
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Figure 8. Two−Tone Wideband Circuit Performance
@ Pout = 6 Watts
Figure 9. Intermodulation Distortion Products
versus Output Power
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD)
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versus Output Power
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Figure 11. Power Gain versus Frequency
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
8
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD) − CONTINUED
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Figure 13. Power Added Efficiency versus
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Figure 14. Error Vector Magnitude versus
Output Power
Figure 15. Spectral Regrowth at 400 kHz
versus Output Power
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versus Output Power
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
9
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MHz
Zload
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900
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910
3.24 − j4.36
920
3.25 − j4.42
930
3.25 − j4.47
940
3.23 − j4.52
950
3.21 − j4.56
960
3.16 − j4.60
970
3.11 − j4.65
980
3.04 − j4.70
Zload
= Test circuit impedance as
measured from drain to ground.
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&6 Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
11
NOTES
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
12
RF Device Data
Freescale Semiconductor
NOTES
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
r1
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PIN ONE
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ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
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DATUM
PLANE
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CASE 1329−09
ISSUE J
TO−272 WB−16
PLASTIC
MW4IC915NBR1(MBR1)
DIM
A
A1
A2
D
D1
E
E1
E2
F
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b2
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MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
14
RF Device Data
Freescale Semiconductor
E1
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4 7
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B
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4
6X
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CASE 1329A−03
ISSUE C
TO−272 WB−16 GULL
PLASTIC
MW4IC915GNBR1(GMBR1)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
15
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MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
Document Number: MW4IC915
Rev. 5, 3/2005
16
RF Device Data
Freescale Semiconductor