RPR-359F Sensors Reflective photosensor (photoreflector) RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in plastic with a visible light filter, there is almost no effect from stay light. !External dimensions (Units : mm) 8.7±0.1 3.6 0.5 3.6 0.5 !Features 1) A plastic lens is used for high sensitivity. 2) A built-in visible light filter minimizes the influence of stray light. 3) Low collector-emitter saturation voltage. 4) Lightweight and compact. 3 4 Notes : 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. 1 Cathode 2 Anode 3 Collector 4 Emitter 0.65 1 2 4.5±0.1 0.65 0.5 (2.5) 2.0±0.3 12Min. (4.2) 2.1±0.5 4.4 5.8±0.1 0.35 0.6±0.1 5.8±0.5 !Application Copiers, Compact disc players 4− 0.5±0.1 !Absolute maximum ratings (Ta=25°C) Parameter Input (LED) Symbol Limits Unit Forward current IF 50 mA Reverse voltage VR 5 V PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V IC 30 mA Power dissipation Output (Phototransistor) Collector current PC 100 mW Operating temperature Topr −25∼+85 ˚C Storage temperature Tstg −40∼+100 ˚C Collector power dissipation 1/3 RPR-359F Sensors !Electrical and optical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Input characteristics Forward voltage VF − 1.3 1.6 V IF=50mA Reverse current IR − − 10 µA VR=5V Output characteristics Dark current VCE=10V Parameter Transfer characteristics Conditions ICEO − − 0.5 µA Peak sensitivity wavelength λP − 800 − nm − Collector current IC ∗ 200 500 1800 µA VCC=5V, IF=20mA, RL=100Ω, d=3.5mm VCE(sat) − 0.1 0.3 V IF=20mA, IC=100µA tr·tf − 10 − µs VCC=10V, IF=20mA, RL=100Ω Collector-emitter saturation voltage Response time ∗ Standard paper (90% reflection) 80 PD 60 40 20 0 0 20 40 60 80 100 10 1 0.1 0.8 100 0.1 2.4 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1 1.2 1.4 1.6 1 10 100 10mA 1mA 0.8 0.4 0 0 2.0 1.8 IF=40mA 1.4 30mA 1.2 1.0 0.8 20mA 0.6 15mA 0.4 10mA 5mA 0 0 5 10 15 20 40 60 80 100 Fig.3 Forward voltage vs. ambient tempereture 2.0 1.6 20 AMBIENT TEMPERATURE : Ta (°C) Standard paper (90% reflection) d=3.5mm 2.2 0.2 0.01 0.1 1.8 1.2 Fig.2 Forward current vs. forward voltage Fig.1 Power dissipation / collector power dissipation vs. ambient temperature VCC=5V Standard paper (90% reflection) d=3.5mm 1.0 1.6 FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (°C) 10 2.0 Ta=25°C FORWARD VOLTAGE : VF (V) 1A PC 25 DARK CURRENT : ICEO (µA) 100 FORWARD CURRENT : IF (mA) POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD/PC (mW) !Electrical and optical characteristic curves 1 VCE=30V 20V 10V 0.1 0.01 0.001 −100 −80 −60 −40 −20 0 20 40 60 80 100 120 140 FORWARD CURRENT : IF (mA) COLLECTOR−EMITTER VOLTAGE : VCE (V) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Collector current vs. forward current Fig.5 Output characteristics Fig.6 Dark current vs.ambient temperature 2/3 RPR-359F 160 100 140 FORWARD CURRENT : IF (mA) 150 d 140 130 120 110 100 90 VCE=5V 80 IF=20mA 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 RELATIVE COLLECTOR CURRENT : IC (%) RELATIVE COLLECTOR CURRENT : IC (%) Sensors 120 100 80 60 40 20 0 −60 −40 −20 DISTANCE : d (mm) Fig.7 Relative output vs. distance 0 20 40 60 80 AMBIENT TEMPERATURE : Ta (°C) Fig.8 Relative output vs. ambient temperature 100 80 60 40 20 0 0 20 40 60 80 100 AMBIENT TEMPERATURE : Ta (°C) Fig.9 Forward current vs. ambient temperature !Circuit for testing transfer characteristics Reflector d=3.5mm IF IC VCC VCC=5V IF=20mA 3/3