MC74VHC1GT126 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs The MC74VHC1GT126 is a single gate noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC1GT126 requires the 3−state control input (OE) to be set Low to place the output into the high impedance state. The device input is compatible with TTL−type input thresholds and the output has a full 5 V CMOS level output swing. The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic−level translator from 3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high−voltage power supply. The MC74VHC1GT126 input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage. This allows the MC74VHC1GT126 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when VCC = 0 V. These input and output structures help prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. • • • • • • • • http://onsemi.com MARKING DIAGRAMS SC−88A / SOT−353/SC−70 DF SUFFIX CASE 419A W3d Pin 1 d = Date Code TSOP−5/SOT−23/SC−59 DT SUFFIX CASE 483 W3d Pin 1 d = Date Code High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1 A (Max) at TA = 25°C PIN ASSIGNMENT TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load 1 OE Power Down Protection Provided on Inputs and Outputs 2 IN A Balanced Propagation Delays 3 GND Pin and Function Compatible with Other Standard Logic Families 4 OUT Y 5 VCC Chip Complexity: FETs = 62; Equivalent Gates = 16 FUNCTION TABLE OE 1 IN A 2 GND 3 5 VCC 4 OUT Y A Input OE Input Y Output L H X H H L L H Z Figure 1. Pinout (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. OE OUT Y IN A Figure 2. Logic Symbol Semiconductor Components Industries, LLC, 2002 December, 2003 − Rev. 9 1 Publication Order Number: MC74VHC1GT126/D MC74VHC1GT126 MAXIMUM RATINGS (Note 1) Symbol Value Unit VCC DC Supply Voltage Characteristics −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V VOUT DC Output Voltage −0.5 to VCC + 0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current +20 mA IOUT DC Output Current, per Pin +25 mA ICC DC Supply Current, VCC and GND +50 mA PD Power Dissipation in Still Air SC−88A, TSOP−5 200 mW JA Thermal Resistance SC−88A, TSOP−5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias +150 °C Tstg Storage Temperature −65 to +150 °C VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 200 N/A V ILatch−Up Latch−Up Performance Above VCC and Below GND at 125°C (Note 5) ±500 mA VOUT < GND; VOUT > VCC 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22−A114−A 3. Tested to EIA/JESD22−A115−A 4. Tested to JESD22−C101−A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 3.0 5.5 V VIN DC Input Voltage 0.0 5.5 V VOUT DC Output Voltage 0.0 VCC V TA Operating Temperature Range −55 +125 °C tr , tf Input Rise and Fall Time 0 20 ns/V VCC = 5.0 V ± 0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80 ° C 117.8 TJ = 90 ° C 1,032,200 TJ = 100 ° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130 ° C Junction Temperature °C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74VHC1GT126 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min 1.4 2.0 2.0 VIH Minimum High−Level Input Voltage 3.0 4.5 5.5 VIL Maximum Low−Level Input Voltage 3.0 4.5 5.5 VOH Minimum g High−Level Output Voltage VIN = VIH or VIL Typ Max Min 3.0 4.5 2.9 4.4 VIN = VIH or VIL IOH = − 4 mA IOH = − 8 mA 3.0 4.5 2.58 3.94 Maximum Low−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOL = 50 A 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA IIN Maximum Input Leakage Current ICC Max 1.4 2.0 2.0 0.53 0.8 0.8 VIN = VIH or VIL IOH = − 50 A VOL TA ≤ 85°C TA = 25°C VCC (V) 3.0 4.5 0.0 0.0 −55 ≤ TA ≤ 125°C Min Max 1.4 2.0 2.0 0.53 0.8 0.8 V 0.53 0.8 0.8 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V V 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 VIN = 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0 ± 1.0 A Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 A ICCT Quiescent Supply Current Input: VIN = 3.4 V Other Input: VCC or GND 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 A IOZ Maximum 3−State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 5.5 ± 0.25 ± 2.5 ± 2.5 A AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns TA ≤ 85°C TA = 25°C Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ Max Min Max CL = 15pF CL = 50pF 5.6 8.1 8.0 11.5 1.0 1.0 9.5 13.0 12.0 16.0 VCC = 5.0 ± 0.5 V CL = 15pF CL = 50pF 3.8 5.3 5.5 7.5 1.0 1.0 6.5 8.5 8.5 10.5 Maximum Output Enable TIme,OE to Y (Figures 4 and 5) VCC = 3.3 ± 0.3 V RL = RI = 500 CL = 15pF CL = 50pF 5.4 7.9 8.0 11.5 1.0 1.0 9.5 13.0 11.5 15.0 VCC = 5.0 ± 0.5 V RL = RI = 500 CL = 15pF CL = 50pF 3.6 5.1 5.1 7.1 1.0 1.0 6.0 8.0 7.5 9.5 Maximum Output Disable Time,OE to Y (Figures 4 and 5) VCC = 3.3 ± 0.3 V RL = RI = 500 CL = 15pF CL = 50pF 6.5 8.0 9.7 13.2 1.0 1.0 11.5 15.0 14.5 18.0 VCC = 5.0 ± 0.5 V RL = RI = 500 CL = 15pF CL = 50pF 4.8 7.0 6.8 8.8 1.0 1.0 8.0 10.0 10.0 12.0 10 10 10 VCC = 3.3 ± 0.3 V Min −55 ≤ TA ≤ 125°C Typ Parameter Maximum Propagation Delay, A to Y (Figures 3 and 5) Test Conditions Cin Maximum Input Capacitance 4 Cout Maximum Three−State Output Capacitance (Output in High Impedance State) 6 Min Max Unit ns ns ns pF pF Typical @ 25°C, VCC = 5.0 V CPD 14 Power Dissipation Capacitance (Note 6) pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per buffer). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1GT126 SWITCHING WAVEFORMS VCC 50% A OE tPHL tPLH VCC 50% GND tPZL GND tPZH Y VOL + 0.3V tPHZ VOH − 0.3V 50% VCC Y Figure 4. Switching Waveforms HIGH IMPEDANCE Figure 5. TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST HIGH IMPEDANCE 50% VCC Y 50% VCC tPLZ DEVICE UNDER TEST CL* *Includes all probe and jig capacitance 1 k OUTPUT CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 6. Test Circuit Figure 7. Test Circuit INPUT Figure 8. Input Equivalent Circuit DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Circuit Indicator Temp Range Identifier Technology Device Function Package Suffix Tape & Reel Suffix Package Type (Name/SOT#/ Common Name) Tape and Reel Size† MC74VHC1GT126DF1 MC 74 VHC1G T126 DF 1 SC−88A / SOT−353 / SC−70 178 mm (7”) 3000 Unit MC74VHC1GT126DF2 MC 74 VHC1G T126 DF 2 SC−88A / SOT−353 / SC−70 178 mm (7”) 3000 Unit MC74VHC1GT126DT1 MC 74 VHC1G T126 DT 1 TSOP5 / SOT−23 / SC−59 178 mm (7”) 3000 Unit †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74VHC1GT126 CAVITY TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN TOP TAPE COMPONENTS TAPE LEADER NO COMPONENTS 400 mm MIN DIRECTION OF FEED Figure 9. Tape Ends for Finished Goods TAPE DIMENSIONS mm 4.00 1.50 TYP 4.00 2.00 1.75 3.50 0.50 8.00 0.30 1 1.00 MIN DIRECTION OF FEED Figure 10. SC−70−5/SC−88A/SOT−353 DF1 Reel Configuration/Orientation TAPE DIMENSIONS mm 4.00 1.50 TYP 4.00 2.00 1.75 3.50 0.50 8.00 0.30 1 1.00 MIN DIRECTION OF FEED Figure 11. SC−70/SC−88A/SOT−353 DF2 and SOT23−5/TSOP−5/SC59−5 DT1 Reel Configuration/Orientation http://onsemi.com 5 MC74VHC1GT126 t MAX 1.5 mm MIN (0.06 in) A 13.0 mm 0.2 mm (0.512 in 0.008 in) 50 mm MIN (1.969 in) 20.2 mm MIN (0.795 in) FULL RADIUS G Figure 12. Reel Dimensions REEL DIMENSIONS Tape Size T and R Suffix A Max G t Max 8 mm 1, 2 178 mm (7 in) 8.4 mm, + 1.5 mm, −0.0 (0.33 in + 0.059 in, −0.00) 14.4 mm (0.56 in) DIRECTION OF FEED BARCODE LABEL POCKET Figure 13. Reel Winding Direction http://onsemi.com 6 HOLE MC74VHC1GT126 PACKAGE DIMENSIONS SC70−5/SC−88A/SOT−353 DF SUFFIX 5−LEAD PACKAGE CASE 419A−02 ISSUE G A G 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 4 DIM A B C D G H J K N S −B− S 1 2 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 SCALE 20:1 1.9 0.0748 mm inches Figure 14. SC−88A/SC70−5/SOT−353 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1GT126 PACKAGE DIMENSIONS SOT23−5/TSOP−5/SC59−5 DT SUFFIX 5−LEAD PACKAGE CASE 483−01 ISSUE C D S 5 4 1 2 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. L MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.90 3.10 0.1142 0.1220 B 1.30 1.70 0.0512 0.0669 C 0.90 1.10 0.0354 0.0433 D 0.25 0.50 0.0098 0.0197 G 0.85 1.05 0.0335 0.0413 H 0.013 0.100 0.0005 0.0040 J 0.10 0.26 0.0040 0.0102 K 0.20 0.60 0.0079 0.0236 L 1.25 1.55 0.0493 0.0610 M 0_ 10 _ 0_ 10 _ S 2.50 3.00 0.0985 0.1181 G A J C 0.05 (0.002) H M K SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm inches Figure 15. THIN SOT23−5/TSOP−5/SC59−5 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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