MMT10B230T3, MMT10B260T3, MMT10B310T3 Preferred Device Thyristor Surge Protectors High Voltage Bidirectional TSPD http://onsemi.com These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. • Outstanding High Surge Current Capability: 100 Amps 10x1000 µsec Guaranteed at the extended temp range of −20°C to 65°C • The MMT10B230T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. • Bidirectional Protection in a Single Device • Little Change of Voltage Limit with Transient Amplitude or Rate • Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices • Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation. • Surface Mount Technology (SMT) • Complies with GR1089 Second Level Surge Spec at 500 Amps 2x10 µsec Waveforms • Indicates UL Registered − File #E210057 • Device Marking: MMT10B230T3: RPDF; MMT10B260T3: RPDG; MMT10B310T3: RPDJ, and Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Off−State Voltage − Maximum MMT10B230T3 MMT10B260T3 MMT10B310T3 VDM Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1. and 2.) (−20°C to +65°C) 2 x 10 µsec 10 x 700 µsec 10 x 1000 µsec Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, R = 2.0, L = 1.5 µH, C = 1.67 µF, Ipk = 110A Value March, 2004 − Rev. 7 MT1 Volts 170 200 270 MT2 SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C MARKING DIAGRAMS YWW RPDx RPDx x Y WW = Specific Device Code = F, G or J = Year = Work Week ORDERING INFORMATION Device Package Shipping† MMT10B230T3 SMB 12mm Tape and Reel (2.5K/Reel) MMT10B260T3 SMB 12mm Tape and Reel (2.5K/Reel) MMT10B310T3 SMB 12mm Tape and Reel (2.5K/Reel) A(pk) IPPS1 IPPS2 IPPS3 500 180 100 di/dt 100 ) Unit A/µs †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. Semiconductor Components Industries, LLC, 2004 BIDIRECTIONAL TSPD ( 100 AMP SURGE 265 thru 365 VOLTS 1 Publication Order Number: MMT10B230T3/D MMT10B230T3, MMT10B260T3, MMT10B310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State TJ1 −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 + 175 °C Instantaneous Peak Power Dissipation (Ipk = 100 A, 10x1000 µsec @ 25°C) PPK 4000 W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristic Breakover Voltage (Both polarities) (dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V) Symbol Min Typ Max MMT10B230T3 MMT10B260T3 MMT10B310T3 − − − − − − 265 320 365 MMT10B230T3 MMT10B260T3 MMT10B310T3 − − − − − − 290 340 400 − − − − − − 265 320 365 − − − − − − 290 340 400 − 0.08 − − − − 190 240 280 − − − V(BO) Unit Volts (+65°C) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), MMT10B230T3 MMT10B260T3 RI = 1.0 kΩ, t = 0.5 cycle) (Note 3.) MMT10B310T3 (+65°C) MMT10B230T3 MMT10B260T3 MMT10B310T3 Breakover Voltage Temperature Coefficient V(BO) dV(BO)/dTJ Breakdown Voltage (I(BR) = 1.0 mA) Both polarities Volts V(BR) MMT10B230T3 MMT10B260T3 MMT10B310T3 %/°C Volts Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities ID1 ID2 − − − − 2.0 5.0 µA On−State Voltage (IT = 1.0 A) (PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3.) VT − 1.53 5.0 Volts Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ) Both polarities IBO − 260 − mA Holding Current (Both polarities) VS = 500 Volts; IT (Initiating Current) = 1.0 A IH 150 270 − mA dv/dt 2000 − − V/µs CO − − 65 160 − 200 pF (Note 3.) Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) 3. Measured under pulse conditions to reduce heating. http://onsemi.com 2 MMT10B230T3, MMT10B260T3, MMT10B310T3 Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol Parameter ID1, ID2 Off State Leakage Current VD1, VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage VTM V(BO) IH ID1 I(BO) ID2 + Voltage VD1 http://onsemi.com 3 VD2 V(BR) MMT10B230T3, MMT10B260T3, MMT10B310T3 340 V BR , BREAKDOWN VOLTAGE (VOLTS) I D1, OFF−STATE CURRENT (µ A) 100 VD1 = 50V 10 1 0.1 0.01 0 20 40 60 80 100 TEMPERATURE (°C) 120 MMT10B310T3 300 280 260 MMT10B260T3 240 220 200 MMT10B230T3 180 160 − 50 140 Figure 1. Off−State Current versus Temperature − 25 0 25 50 TEMPERATURE (°C) 75 100 125 Figure 2. Breakdown Voltage versus Temperature 1000 360 340 900 MMT10B310T3 I H , HOLDING CURRENT (mA) V BO , BREAKOVER VOLTAGE (VOLTS) 320 320 MMT10B260T3 300 280 260 240 MMT10B230T3 220 200 800 700 600 500 400 300 200 180 − 50 − 25 0 25 50 TEMPERATURE (°C) 75 100 100 − 50 125 Figure 3. Breakover Voltage versus Temperature − 25 0 25 50 TEMPERATURE (°C) 75 100 125 Figure 4. Holding Current versus Temperature Peak Value 100 CURRENT (A) Ipp − PEAK PULSE CURRENT − %Ipp 100 tr = rise time to peak value tf = decay time to half value Half Value 50 0 0 tr 10 1 0.01 tf TIME (s) Figure 5. Exponential Decay Pulse Waveform 0.1 1 TIME (sec) 10 100 Figure 6. Peak Surge On−State Current versus Surge Current Duration, Sinusoidal Waveform http://onsemi.com 4 MMT10B230T3, MMT10B260T3, MMT10B310T3 TIP OUTSIDE PLANT GND TELECOM EQUIPMENT GND TELECOM EQUIPMENT RING PPTC* TIP OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE PLANT GND RING HEAT COIL http://onsemi.com 5 TELECOM EQUIPMENT MMT10B230T3, MMT10B260T3, MMT10B310T3 PACKAGE DIMENSIONS SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C−01 ISSUE A S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H J SOLDERING FOOTPRINT* 0.089 2.261 0.108 2.743 inches mm 0.085 2.159 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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