ONSEMI MMT10B310T3

MMT10B230T3,
MMT10B260T3,
MMT10B310T3
Preferred Device
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
• Outstanding High Surge Current Capability: 100 Amps 10x1000 µsec
Guaranteed at the extended temp range of −20°C to 65°C
• The MMT10B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation.
• Surface Mount Technology (SMT)
• Complies with GR1089 Second Level Surge Spec at 500 Amps
2x10 µsec Waveforms
• Indicates UL Registered − File #E210057
• Device Marking: MMT10B230T3: RPDF; MMT10B260T3: RPDG;
MMT10B310T3: RPDJ, and Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Off−State Voltage − Maximum
MMT10B230T3
MMT10B260T3
MMT10B310T3
VDM
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1. and 2.) (−20°C to +65°C)
2 x 10 µsec
10 x 700 µsec
10 x 1000 µsec
Maximum Non−Repetitive Rate of
Change of On−State Current
Double Exponential Waveform,
R = 2.0, L = 1.5 µH, C = 1.67 µF,
Ipk = 110A
Value
March, 2004 − Rev. 7
MT1
Volts
170
200
270
MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MARKING DIAGRAMS
YWW
RPDx
RPDx
x
Y
WW
= Specific Device Code
= F, G or J
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
MMT10B230T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT10B260T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT10B310T3
SMB
12mm Tape and Reel
(2.5K/Reel)
A(pk)
IPPS1
IPPS2
IPPS3
500
180
100
di/dt
100
)
Unit
A/µs
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
 Semiconductor Components Industries, LLC, 2004
BIDIRECTIONAL TSPD (
100 AMP SURGE
265 thru 365 VOLTS
1
Publication Order Number:
MMT10B230T3/D
MMT10B230T3, MMT10B260T3, MMT10B310T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
TJ1
−40 to + 125
°C
Overload Junction Temperature − Maximum Conducting State Only
TJ2
+ 175
°C
Instantaneous Peak Power Dissipation (Ipk = 100 A, 10x1000 µsec @ 25°C)
PPK
4000
W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Breakover Voltage (Both polarities)
(dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V)
Symbol
Min
Typ
Max
MMT10B230T3
MMT10B260T3
MMT10B310T3
−
−
−
−
−
−
265
320
365
MMT10B230T3
MMT10B260T3
MMT10B310T3
−
−
−
−
−
−
290
340
400
−
−
−
−
−
−
265
320
365
−
−
−
−
−
−
290
340
400
−
0.08
−
−
−
−
190
240
280
−
−
−
V(BO)
Unit
Volts
(+65°C)
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), MMT10B230T3
MMT10B260T3
RI = 1.0 kΩ, t = 0.5 cycle) (Note 3.)
MMT10B310T3
(+65°C)
MMT10B230T3
MMT10B260T3
MMT10B310T3
Breakover Voltage Temperature Coefficient
V(BO)
dV(BO)/dTJ
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
Volts
V(BR)
MMT10B230T3
MMT10B260T3
MMT10B310T3
%/°C
Volts
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
ID1
ID2
−
−
−
−
2.0
5.0
µA
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3.)
VT
−
1.53
5.0
Volts
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ)
Both polarities
IBO
−
260
−
mA
Holding Current (Both polarities)
VS = 500 Volts; IT (Initiating Current) = 1.0 A
IH
150
270
−
mA
dv/dt
2000
−
−
V/µs
CO
−
−
65
160
−
200
pF
(Note 3.)
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
3. Measured under pulse conditions to reduce heating.
http://onsemi.com
2
MMT10B230T3, MMT10B260T3, MMT10B310T3
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
ID1, ID2
Off State Leakage Current
VD1, VD2
Off State Blocking Voltage
VBR
Breakdown Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
VTM
V(BO)
IH
ID1
I(BO)
ID2
+ Voltage
VD1
http://onsemi.com
3
VD2
V(BR)
MMT10B230T3, MMT10B260T3, MMT10B310T3
340
V BR , BREAKDOWN VOLTAGE (VOLTS)
I D1, OFF−STATE CURRENT (µ A)
100
VD1 = 50V
10
1
0.1
0.01
0
20
40
60
80
100
TEMPERATURE (°C)
120
MMT10B310T3
300
280
260
MMT10B260T3
240
220
200
MMT10B230T3
180
160
− 50
140
Figure 1. Off−State Current versus Temperature
− 25
0
25
50
TEMPERATURE (°C)
75
100
125
Figure 2. Breakdown Voltage versus Temperature
1000
360
340
900
MMT10B310T3
I H , HOLDING CURRENT (mA)
V BO , BREAKOVER VOLTAGE (VOLTS)
320
320
MMT10B260T3
300
280
260
240
MMT10B230T3
220
200
800
700
600
500
400
300
200
180
− 50
− 25
0
25
50
TEMPERATURE (°C)
75
100
100
− 50
125
Figure 3. Breakover Voltage versus Temperature
− 25
0
25
50
TEMPERATURE (°C)
75
100
125
Figure 4. Holding Current versus Temperature
Peak
Value
100
CURRENT (A)
Ipp − PEAK PULSE CURRENT − %Ipp
100
tr = rise time to peak value
tf = decay time to half value
Half Value
50
0
0 tr
10
1
0.01
tf
TIME (s)
Figure 5. Exponential Decay Pulse Waveform
0.1
1
TIME (sec)
10
100
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
http://onsemi.com
4
MMT10B230T3, MMT10B260T3, MMT10B310T3
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
GND
TELECOM
EQUIPMENT
RING
PPTC*
TIP
OUTSIDE
PLANT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE
PLANT
GND
RING
HEAT COIL
http://onsemi.com
5
TELECOM
EQUIPMENT
MMT10B230T3, MMT10B260T3, MMT10B310T3
PACKAGE DIMENSIONS
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C−01
ISSUE A
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D
B
C
K
P
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
J
SOLDERING FOOTPRINT*
0.089
2.261
0.108
2.743
inches
mm
0.085
2.159
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
6
For additional information, please contact your
local Sales Representative.
MMT10B230T3/D