SMF5V0A to SMF51A www.vishay.com Vishay Semiconductors Surface Mount ESD Protection Diodes FEATURES • • • • 2 1 • 20278 17249 • MARKING (example only) • XX YY • • • 22623 Bar = cathode marking YY = type code (see table below) XX = date code • • • For surface mounted applications Low-profile package Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 61000-4-2 (IEC 801-2) Ideal for EFT protection of data lines in accordance with IEC 61000-4-4 (IEC 801-4) ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge Low incremental surge resistance, excellent clamping capability 200 W peak pulse power capability with a 10/1000 μs waveform, repetition rate (duty cycle): 0.01 % Very fast response time High temperature soldering guaranteed: 260 °C/10 s at terminals e3 - Sn AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ORDERING INFORMATION SMF5V0A-GSxx GS08 = 3K per 7" reel (8 mm tape), 30K/box GS18 = 10K per 13" reel (8 mm tape), 50K/box Part number PACKAGE DATA DEVICE NAME PACKAGE TYPE CODE NAME SMF5V0A AE SMF6V5A AK SMF7V0A AM SMF7V5A AP SMF8V0A AR SMF8V5A AT SMF9V0A AV SMF10A AX SMF11A SMF12A SMF13A MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 15 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals AZ SMF BE BG SMF14A BK SMF15A BM SMF16A BP SMF17A BR SMF18A BT SMF20A BV SMF22A BX SMF24A BZ Rev. 2.6, 30-Nov-11 WEIGHT Document Number: 85811 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF51A www.vishay.com Vishay Semiconductors PACKAGE DATA DEVICE NAME PACKAGE TYPE CODE NAME SMF26A CE SMF28A CG SMF30A CK SMF33A CM SMF36A SMF SMF40A CP CR SMF43A CT SMF45A CV SMF48A CX SMF51A CZ WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 15 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS tp = 10/1000 μs waveform acc. IEC 61000-4-5 Peak pulse current tp = 8/20 μs waveform acc. IEC 61000-4-5 Peak pulse power 8.3 ms single half sine-wave Air discharge acc. IEC 61000-4-2; 10 pulses Thermal resistance UNIT IPPM A IFSM Contact discharge acc. IEC 61000-4-2; 10 pulses ESD immunity VALUE see “Electrical Characteristics” PPP tp = 10/1000 μs waveform acc. IEC 61000-4-5 Peak forward surge current SYMBOL VESD 1000 W 200 W 20 A ± 30 kV ± 30 kV 180 K/W Mounted on epoxy glass PCB with 3 mm x 3 mm, Cu pads ( 40 μm thick) RthJA IF = 12 A VF 3.5 V Junction temperature TJ - 55 to + 150 °C TSTG - 55 to + 150 °C Forward clamping voltage Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER REVERSE BREAKDOWN VOLTAGE at IT, tp 5 ms REVERSE REVERSE TEST STAND-OFF CURRENT CURRENT VOLTAGE at VRWM MAXIMUM REVERSE PEAK PULSE CLAMPING CAPACITANCE PROTECTION CURRENT VOLTAGE at VR = 0 V, PATHS tp = 10/1000 μs at IPPM f = 1 MHz VBR MIN. (V) IT (mA) VRWM (V) IR (μA) IPPM (A) VC (V) CD TYP. (pF) SMF5V0A 6.40 10 5 400 21.7 9.2 1030 1 SMF6V0A 6.67 10 6 400 19.4 10.3 1010 1 Nchannel SMF6V5A 7.22 10 6.5 250 17.9 11.2 850 1 SMF7V0A 7.78 10 7 100 16.7 12 750 1 SMF7V5A 8.33 1 7.5 50 15.5 12.9 730 1 SMF8V0A 8.89 1 8 25 14.7 13.6 670 1 SMF8V5A 9.44 1 8.5 10 13.9 14.4 660 1 SMF9V0A 10 1 9 5 13.5 15.4 620 1 SMF10A 11.1 1 10 2.5 11.8 17 570 1 SMF11A 12.2 1 11 2.5 11 18.2 460 1 SMF12A 13.3 1 12 2.5 10.1 19.9 440 1 SMF13A 14.4 1 13 1 9.3 21.5 420 1 SMF14A 15.6 1 14 1 8.6 23.2 370 1 SMF15A 16.7 1 15 1 8.2 24.4 350 1 SMF16A 17.8 1 16 1 7.7 26 340 1 SMF17A 18.9 1 17 1 7.2 27.6 310 1 SMF18A 20 1 18 1 5.8 29.2 305 1 Rev. 2.6, 30-Nov-11 Document Number: 85811 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF51A www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) REVERSE BREAKDOWN VOLTAGE at IT, tp 5 ms PART NUMBER REVERSE REVERSE TEST STAND-OFF CURRENT CURRENT VOLTAGE at VRWM MAXIMUM REVERSE PEAK PULSE CLAMPING CAPACITANCE PROTECTION CURRENT VOLTAGE at VR = 0 V, PATHS tp = 10/1000 μs at IPPM f = 1 MHz VBR MIN. (V) IT (mA) VRWM (V) IR (μA) IPPM (A) VC (V) CD TYP. (pF) Nchannel SMF20A 22.2 1 20 1 6.2 32.4 207 1 SMF22A 24.4 1 22 1 5.6 35.5 265 1 SMF24A 26.7 1 24 1 5.1 38.9 240 1 SMF26A 28.9 1 26 1 4.8 42.1 225 1 SMF28A 31.1 1 28 1 4.4 45.4 210 1 SMF30A 33.3 1 30 1 4.1 48.4 205 1 SMF33A 36.7 1 33 1 3.8 53.3 190 1 SMF36A 40 1 36 1 3.4 58.1 180 1 SMF40A 44.4 1 40 1 3.1 64.5 165 1 SMF43A 47.8 1 43 1 2.9 69.4 160 1 SMF45A 50 1 45 1 2.8 72.7 155 1 SMF48A 53.3 1 48 1 2.6 77.4 150 1 SMF51A 56.7 1 51 1 2.4 82.4 145 1 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 PPP - Peak Pulse Power (kW) 1 IPPM - Peak Pulse Current, % IRSM 150 Non-repetitive pulse waveform shown in fig. 3 TA = 25 °C tr =10 µs 17250 Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage (%) Fig. 1 - Peak Pulse Power Rating Peak value IPPM 100 Half value IPPM IPPM 2 50 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) TJ = 25 °C pulse width (td) is defined as the point where the peak current decays to 50 % of IPPM 0 0 17252 10/100 s waveform as defined by R.E.A. td 1 2 3 4 t - Time (ms) Fig. 3 - Pulse Waveform 100 75 50 25 0 25 0 50 75 100 125 150 175 200 TA - Ambient Temperature 17251 Fig. 2 - Pulse Derating Curve Rev. 2.6, 30-Nov-11 Document Number: 85811 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF51A www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SMF 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.05 (0.002) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 1.7 (0.067) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) 17247 Rev. 2.6, 30-Nov-11 Document Number: 85811 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF51A www.vishay.com Vishay Semiconductors BLISTERTAPE DIMENSIONS in millimeters (inches) PS Document-No.: S8-V-3717.02-001 (3) 18513 Rev. 2.6, 30-Nov-11 Document Number: 85811 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMF5V0A to SMF51A www.vishay.com Vishay Semiconductors Pin 1 - Location LLP1713 Top view Pad layout - view from top seen at bottom side Pin 1 - Location LLP2513 Top view Pad layout - view from top seen at bottom side Pin 1 - Location LLP3313 Top view Rev. 2.6, 30-Nov-11 Pad layout - view from top seen at bottom side Document Number: 85811 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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