FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • AEC Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC ITO-220AB 2 3 1 1 FEP16xT PIN 1 PIN 2 PIN 3 CASE 2 3 FEPF16xT PIN 1 PIN 2 PIN 3 TO-263AB K TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. 2 1 FEPB16xT PIN 1 K PIN 2 HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 8.0 A x 2 VRRM 50 V to 600 V IFSM 200 A, 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V, 1.50 V TJ max. 150 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) SYMBOL FEP 16AT FEP 16BT FEP 16CT FEP 16DT FEP 16FT FEP 16GT FEP 16HT FEP 16JT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage PARAMETER VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current at TC = 100 °C IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Operating storage and temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Document Number: 88596 Revision: 07-Nov-07 16 200 A 125 A TJ, TSTG - 55 to +150 °C VAC 1500 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode (1) SYMBOL 8.0 A FEP 16AT FEP 16BT VF Maximum DC reverse current per diode at rated DC blocking voltage TC = 25 °C TC = 100 °C FEP 16CT FEP 16DT 0.95 IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance per diode 4.0 V, 1 MHz CJ FEP 16GT FEP 16HT 1.30 FEP 16JT UNIT 1.50 V 10 500 IR Maximum reverse recovery time per diode FEP 16FT µA 35 50 85 ns 60 pF Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case per diode SYMBOL FEP FEPF FEPB UNIT RθJC 2.2 3.1 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.85 45 50/tube Tube 45 50/tube Tube 45 50/tube Tube 81 800/reel Tape and reel 45 50/tube Tube 1.97 45 50/tube Tube 1.35 45 50/tube Tube 1.35 81 800/reel Tape and reel TO-220AB FEP16JT-E3/45 ITO-220AB FEPF16JT-E3/45 1.97 TO-263AB FEPB16JT-E3/45 1.35 TO-263AB FEPB16JT-E3/81 1.35 TO-220AB FEP16JTHE3/45 (1) 1.85 ITO-220AB FEPF16JTHE3/45 (1) TO-263AB FEPB16JTHE3/45 (1) TO-263AB (1) FEPB16JTHE3/81 Note: (1) Automotive grade AEC Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88596 Revision: 07-Nov-07 FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 20 Instantaneous Reverse Leakage Current (µA) Average Forward Current (A) Resistive or Inductive Load 16 12 8 4 0 10 TJ = 100 °C 1 TJ = 25 °C 0.1 0.01 0 50 100 0 150 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Characteristics Per Diode 1000 300 50 - 400 V 500 - 600 V TC = 100 °C 8.3 ms Single Half Sine-Wave 250 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 50 - 400 V 500 - 600 V 200 150 100 50 TJ = 125 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 100 TJ = 125 °C 10 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 1 50 - 400 V 300 - 400 V 500 - 600 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88596 Revision: 07-Nov-07 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7° REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88596 Revision: 07-Nov-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000