VISHAY V30120C_12

New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
TO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
2
3
V30120C
2
1
1
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
3
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
VF30120C
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
PIN 2
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-262AA
K
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
1
1
VB30120C
PIN 1
3
MECHANICAL DATA
VI30120C
K
PIN 2
2
HEATSINK
PIN 1
PIN 2
PIN 3
K
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
120 V
IFSM
150 A
VF at IF = 15 A
0.68 V
TJ max.
150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120C
VF30120C
VB30120C
VI30120C
UNIT
VRRM
120
V
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
EAS
130
mJ
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
TJ, TSTG
- 40 to + 150
°C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
Operating junction and storage temperature range
Document Number: 89041
Revision: 24-Jun-09
per device
per diode
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IR = 1.0 mA
Breakdown voltage
Instantaneous forward voltage per diode (1)
IF = 5 A
IF = 7.5 A
IF = 15 A
SYMBOL
TYP.
VBR
TA = 25 °C
MAX.
UNIT
120 (minimum)
-
V
0.56
0.71
0.86
0.97
0.76
TA = 25 °C
V
VF
IF = 5 A
IF = 7.5 A
IF = 15 A
TA = 125 °C
0.50
0.60
0.68
VR = 90 V
TA = 25 °C
TA = 125 °C
11
8
-
µA
mA
VR = 120 V
TA = 25 °C
TA = 125 °C
17
800
50
µA
mA
Reverse current per diode (2)
IR
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120C
VF30120C
VB30120C
VI30120C
UNIT
RθJC
2.2
4.5
2.2
2.2
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V30120C-E3/4W
1.89
4W
50/tube
Tube
ITO-220AB
VF30120C-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB30120C-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
VB30120C-E3/8W
1.38
8W
800/reel
Tape and reel
TO-262AA
VI30120C-E3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
18
Resistive or Inductive Load
D = 0.5
16
35
30
25
D = 0.8
D = 0.3
V(B,I)30120C
Average Power Loss (W)
Average Forward Rectified Current (A)
40
VF30120C
20
15
10
5
14
D = 0.2
12
10
D = 0.1
D = 1.0
8
T
6
4
D = tp/T
2
Mounted on Specific Heatsink
tp
0
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89041
Revision: 24-Jun-09
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V(B,I)30120C
1
0.01
0.1
0
Junction to Case
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Case
1
VF30120C
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 89041
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
TO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
PIN
2
3
0.160 (4.06)
0.140 (3.56)
0.104 (2.65)
0.096 (2.45)
0.600 (15.24)
0.580 (14.73)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
7° REF.
0.076 (1.93) REF.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
30° (TYP.)
(REF.)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.950 (24.13)
0.920 (23.37)
1
PIN
2
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
PIN 1
PIN 2
PIN 3
HEATSINK
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.41
1 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.055 (1.40)
0.045 (1.14)
0-0.01 (0-0.254)
0.105 (2.67)
0.095 (2.41)
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4
0.205 (5.20)
0.195 (4.95)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
Mounting Pad Layout
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89041
Revision: 24-Jun-09
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000