VISHAY MBR760-E3-45

MBR(F,B)735 thru MBR(F,B)760
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AC
FEATURES
• Guardring for overvoltage protection
ITO-220AC
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
2
2
• High frequency operation
1
1
MBR7xx
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
MBRF7xx
PIN 1
PIN 1
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
CASE
PIN 2
PIN 2
TO-263AB
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
K
2
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
1
MBRB7xx
PIN 1
PIN 2
K
HEATSINK
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.57 V, 0.65 V
TJ max.
150 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR735
MBR745
MBR750
MBR760
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
7.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction temperature range
Document Number: 88680
Revision: 08-Nov-07
1.0
0.5
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
A
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1
MBR(F,B)735 thru MBR(F,B)760
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
IF = 7.5 A
IF = 7.5 A
IF = 15 A
IF = 15 A
(1)
Maximum reverse current at DC
blocking voltage
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
SYMBOL
MBR735
MBR745
MBR750
MBR760
UNIT
VF
0.57
0.84
0.72
0.75
0.65
-
V
IR
0.1
15
0.5
50
mA
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Thermal resistance from junction to case
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJC
3.0
5.0
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
MBR745-E3/45
1.80
45
50/tube
Tube
ITO-220AC
MBRF745-E3/45
1.94
45
50/Tube
Tube
TO-263AB
MBRB745-E3/45
1.33
45
50/Tube
Tube
TO-263AB
MBRB745-E3/81
1.33
81
800/reel
Tape reel
TO-220AC
MBR745HE3/45 (1)
1.80
45
50/tube
Tube
ITO-220AC
MBRF745HE3/45
(1)
1.94
45
50/Tube
Tube
TO-263AB
MBRB745HE3/45 (1)
1.33
45
50/Tube
Tube
TO-263AB
MBRB745HE3/81 (1)
1.33
81
800/reel
Tape reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
175
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
8
6
4
2
MBR735 - MBR745
MBR750 & MBR760
0
150
125
100
75
50
25
50
0
100
150
1
100
10
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88680
Revision: 08-Nov-07
MBR(F,B)735 thru MBR(F,B)760
Vishay General Semiconductor
10 000
10
TJ = 125 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
1
0.1
1000
100
MBR735 - MBR745
MBR750 & MBR760
MBR735 - MBR745
MBR750 & MBR760
10
0.01
0
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
100
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
100
MBR735 - MBR745
MBR750 & MBR760
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = 125 °C
1
0.1
TJ = 75 °C
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
10
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Document Number: 88680
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
MBR(F,B)735 thru MBR(F,B)760
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
TO-220AC
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
7° REF.
0.191 (4.85)
0.171 (4.35)
CASE
0.037 (0.94)
0.027 (0.68)
7° REF.
2
1
0.560 (14.22)
0.530 (13.46)
PIN 1
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
0.110 (2.79)
0.100 (2.54)
PIN 2
0.105 (2.67)
0.095 (2.41)
0.671 (17.04)
0.651 (16.54)
PIN
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
7° REF.
0.076 (1.93) REF.
45° REF.
0.635 (16.13)
0.625 (15.87)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88680
Revision: 08-Nov-07
Legal Disclaimer Notice
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Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000