Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA " " $ # !!" ! . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) — TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) — TIP142, TIP147 • Monolithic Construction with Built–In Base–Emitter Shunt Resistor ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 Unit VCEO 60 80 100 Vdc Collector–Base Voltage VCB 60 80 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak (1) IC 10 15 Adc Base Current — Continuous IB 0.5 Adc Total Device Dissipation @ TC = 25_C PD 125 Watts TJ, Tstg – 65 to + 150 _C Rating Collector–Emitter Voltage Operating and Storage Junction Temperature Range *Motorola Preferred Device 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 100 VOLTS 125 WATTS THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 _C/W Thermal Resistance, Case to Ambient RθJA 35.7 _C/W (1) 5 ms, v 10% Duty Cycle. CASE 340D–02 DARLINGTON SCHEMATICS NPN TIP140 TIP141 TIP142 COLLECTOR BASE PNP TIP145 TIP146 TIP147 COLLECTOR BASE ≈ 8.0 k ≈ 40 EMITTER ≈ 8.0 k ≈ 40 EMITTER Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max 60 80 100 — — — — — — — — — — — — 2.0 2.0 2.0 — — — — — — 1.0 1.0 1.0 — — 20 1000 500 — — — — — — — — 2.0 3.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) VCEO(sus) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Vdc ICEO mA ICBO Emitter Cutoff Current (VBE = 5.0 V) mA IEBO mA ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) hFE — Collector–Emitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 10 A, IB = 40 mA) VBE(sat) — — 3.5 Vdc Base–Emitter On Voltage (IC = 10 A, VCE = 4.0 Vdc) VBE(on) — — 3.0 Vdc td — 0.15 — µs tr — 0.55 — µs ts — 2.5 — µs tf — 2.5 — µs SWITCHING CHARACTERISTICS Resistive Load (See Figure 1) Delay Time Rise Time Storage Time (VCC = 30 V, V IC = 5.0 5 0 A, A IB = 20 mA mA, Duty Cycle 2 2.0%, 0% IB1 = IB2, RC & RB Varied,, TJ = 25_C)) Fall Time (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. 10 VCC – 30 V V2 approx +12 V RB 51 0 D1 ≈ 8.0 k ≈ 40 ts SCOPE 2.0 tf 1.0 tr 0.5 V1 appox. – 8.0 V + 4.0 V 25 µs tr, tf ≤ 10 ns DUTY CYCLE = 1.0% for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse diode and voltage polarities. Figure 1. Switching Times Test Circuit 2 PNP NPN 5.0 t, TIME ( µs) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA RC MSD6100 USED BELOW IB ≈ 100 mA TUT td @ VBE(off) = 0 0.2 0.1 0.2 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 10 Figure 2. Switching Times Motorola Bipolar Power Transistor Device Data 20 TYPICAL CHARACTERISTICS NPN TIP140, TIP141, TIP142 PNP TIP145, TIP146, TIP147 20,000 TJ = 150°C TJ = 150°C 100°C 25°C 2000 – 55°C 1000 500 100°C 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 5000 7000 25°C 5000 – 55°C 3000 2000 VCE = 4.0 V 300 0.5 VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 1000 0.5 10 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 10 5.0 3.0 2.0 IC = 10 A, IB = 4.0 mA IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 – 75 – 50 – 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS) VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS) Figure 3. DC Current Gain versus Collector Current 5.0 3.0 2.0 IC = 10 A, IB = 4.0 mA IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 – 75 – 50 – 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 4.0 3.6 VBE, BASE–EMITTER VOLTAGE (VOLTS) VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 4. Collector–Emitter Saturation Voltage VCE = 4.0 V 3.2 2.8 2.4 IC = 10 A 2.0 1.6 5.0 A 1.2 0.8 – 75 1.0 A – 25 25 75 125 175 4.0 3.6 VCE = 4.0 V 3.2 2.8 2.4 IC = 10 A 2.0 1.6 5.0 A 1.2 0.8 – 75 TJ, JUNCTION TEMPERATURE (°C) 1.0 A – 25 25 75 175 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Base–Emitter Voltage Motorola Bipolar Power Transistor Device Data 3 ACTIVE–REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) (mA) 20 10 7.0 5.0 3.0 2.0 dc TJ = 150°C SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25°C 1.0 TIP140, 145 TIP141, 146 TIP142, 147 20 30 50 15 70 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.2 10 15 10 7.0 5.0 100 mJ 2.0 1.0 0.5 1.0 2.0 5.0 10 20 L, UNCLAMPED INDUCTIVE LOAD (mH) 100 Figure 6. Active–Region Safe Operating Area INPUT VOLTAGE COLLECTOR CURRENT MPS–U52 100 mH RBB1 INPUT TUT 1.5 k 50 VCC = 20 V IC MONITOR RBB2 = 100 VBB2 = 0 VBB1 = 10 V 100 Figure 7. Unclamped Inductive Load VCE MONITOR 50 50 w ≈ 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0 1.42 A VCE(sat) – 20 V COLLECTOR VOLTAGE RS = 0.1 V(BR)CER TEST CIRCUIT NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities. VOLTAGE AND CURRENT WAVEFORMS 5.0 100 70 50 VCE = 10 V IC = 1.0 A TJ = 25°C PNP PNP NPN 20 10 7.0 5.0 NPN 2.0 1.0 1.0 4.0 3.0 2.0 1.0 0 2.0 3.0 5.0 f, FREQUENCY (MHz) 7.0 Figure 9. Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio 4 PD, POWER DISSIPATION (WATTS) hfe , SMALL–SIGNAL FORWARD CURRENT TRANSFER RATIO Figure 8. Inductive Load 10 0 40 80 120 160 TA, FREE–AIR TEMPERATURE (°C) Figure 10. Free–Air Temperature Power Derating Motorola Bipolar Power Transistor Device Data 200 PACKAGE DIMENSIONS C Q B U S E 4 A L 1 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D J H DIM A B C D E G H J K L Q S U V MILLIMETERS MIN MAX ––– 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF ––– 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX ––– 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF ––– 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 V G STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D–02 ISSUE B Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *TIP140/D* Motorola Bipolar Power Transistor Device Data TIP140/D