Order this document by MJE4343/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage — NPN PNP VCEO(sus) = 160 Vdc — MJE4343 MJE4353 • High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS MAXIMUM RATINGS Rating Symbol Max Unit VCEO 160 Vdc Collector–Base Voltage VCB 160 Vdc Emitter–Base Voltage Collector–Emitter Voltage VEB 7.0 Vdc Collector Current — Continuous Peak (1) IC 16 20 Adc Base Current — Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25_C PD 125 Watts TJ, Tstg – 65 to + 150 _C Symbol Max Unit RθJC 1.0 _C/W Operating and Storage Junction Temperature Range CASE 340D–02 TO–218 TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case v 5.0 µs, Duty Cycle w 10%. PD, POWER DISSIPATION (WATTS) (1) Pulse Test: Pulse Width 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 75 150 50 100 125 TA, AMBIENT TEMPERATURE (°C) 25 Figure 1. Power Derating Reference: Ambient Temperature Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ v w ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 160 — — 750 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) Vdc µAdc Collector–Emitter Cutoff Current (VCE = 80 Vdc, IB = 0) ICEO Collector–Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX — — 1.0 5.0 mAdc Collector–Base Cutoff Current (VCB = Rated VCB, IE = 0) ICBO — 750 µAdc Emitter–Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO — 1.0 mAdc 15 8.0 35 (Typ) 15 (Typ) — — 2.0 3.5 ON CHARACTERISTICS (1) DC Current Gain (IC = 8.0 Adc, VCE = 2.0 Vdc) (IC = 16 Adc, VCE = 4.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 800 mA) (IC = 16 Adc, IB = 2.0 Adc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 16 Adc, IB = 2.0 Adc) VBE(sat) — 3.9 Vdc Base–Emitter On Voltage (IC = 16 Adc, VCE = 4.0 Vdc) VBE(on) — 3.9 Vdc fT 1.0 — MHz Cob — 800 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (2) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) (1) Pulse Test: Pulse Width (2) fT = hfe• ftest. 300 µs, Duty Cycle 2.0%. VCC + 30 V 3.0 2.0 25 µs SCOPE RB 0 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% D1 51 1.0 0.7 0.5 tr 0.3 0.2 –4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA Note: Reverse polarities to test PNP devices. Figure 2. Switching Times Test Circuit 2 t, TIME ( µs) +11 V – 9.0 V TJ = 25°C IC/IB = 10 VCE = 30 V RC 0.1 td @ VBE(off) = 5.0 V 0.07 0.05 0.03 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 3. Typical Turn–On Time Motorola Bipolar Power Transistor Device Data 20 TYPICAL CHARACTERISTICS 5.0 2.0 ts TJ = 25°C 1.6 V, VOLTAGE (VOLTS) t, TIME ( µs) 3.0 TJ = 25°C IC/IB = 10 IB1 = IB2 VCE = 30 V 2.0 1.0 1.2 VBE @ VCE = 2.0 V tf 0.7 VBE(sat) @ IC/IB = 10 0.8 0.4 VCE(sat) @ IC/IB = 10 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 0 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) Figure 4. Turn–Off Time 10 20 10 20 Figure 5. On Voltages DC CURRENT GAIN 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 100 VCE = 2 V 50 TJ = 150°C 25°C – 55°C 20 10 100 VVCE CE==22VV TTJJ==150°C 150°C 25°C 25°C ––55°C 55°C 10 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 20 0.2 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. MJE4340 Series (NPN) 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) Figure 7. MJE4350 Series (PNP) 2.0 TJ = 25°C 1.6 IC = 4.0 A 8.0 A 16 A 1.2 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 Figure 8. Collector Saturation Region Motorola Bipolar Power Transistor Device Data 3 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.5 0.2 0.2 0.1 0.1 0.02 0.05 0.01 0.02 SINGLE PULSE 0.01 0.02 0.05 0.1 P(pk) θJC(t) = r(t) θJC θJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 0.05 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1000 2000 Figure 9. Thermal Response 100 IC, COLLECTOR CURRENT (AMP) 50 20 5.0 ms 10 dc 5.0 2.0 1.0 0.5 SECONDARY BREAKDOWN LIMITED THERMAL LIMIT TC = 25°C BONDING WIRE LIMITED 0.2 0.1 3.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 9. 50 70 100 150 200 5.0 7.0 10 20 30 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 10. Maximum Forward Bias Safe Operating Area For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 11 gives RBSOA characteristics. IC, COLLECTOR CURRENT (AMPS) REVERSE BIAS 20 16 TJ = 100°C VBE(off) ≤ 5 V 12 8.0 4.0 20 40 60 80 100 120 140 160 180 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 11. Maximum Reverse Bias Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS C Q B U S E 4 A L 1 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D J H DIM A B C D E G H J K L Q S U V MILLIMETERS MIN MAX ––– 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF ––– 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX ––– 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF ––– 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 V G STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D–02 ISSUE B Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ 6 ◊ Motorola Bipolar Power Transistor DeviceMJE4343/D Data