Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - TO92 PIN BT131 series QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT VDRM IT(RMS) ITSM BT131Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION 500 500 1 16 600 600 1 16 V A A SYMBOL DESCRIPTION 1 main terminal 2 2 gate 3 main terminal 1 T2 T1 G 3 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS MIN. - full sine wave; Tlead ≤51 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX. -500 5001 UNIT -600 6001 V - 1 A - 16 17.6 1.28 A A A2s -40 - 50 50 50 10 2 5 5 0.5 150 125 A/µs A/µs A/µs A/µs A V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. April 1998 1 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT131 series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-lead Thermal resistance junction to lead Thermal resistance junction to ambient full cycle half cycle pcb mounted;lead length = 4mm Rth j-a MIN. TYP. MAX. UNIT - 150 60 80 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- GT2- G+ - 0.4 1.3 1.4 3.8 3 3 3 7 mA mA mA mA T2+ G+ T2+ GT2- GT2- G+ 0.2 - 1.2 4.0 1.0 2.5 1.3 1.2 0.7 0.3 0.1 5 8 5 8 5 1.5 1.5 0.5 mA mA mA mA mA V V V mA MIN. TYP. MAX. UNIT 5 15 - V/µs - 2 - µs STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current VD = 12 V; IT = 0.1 A IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 2.0 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs tgt April 1998 2 Rev 1.000 Philips Semiconductors Product specification Triacs logic level 1.4 BT131 series BT132D Ptot / W Tmb(max) / C =180 1.2 120 1 1 IT(RMS) / A 41 53 60 0.6 30 51 C 1 65 0.8 90 0.8 BT132D 1.2 77 0.6 89 0.4 0.4 101 0.2 113 00 0 0.2 0.4 0.6 IT(RMS) / A 0.8 0.2 125 1.2 1 0 -50 3 time 2.0 Tj initial = 25 C max 100 1.5 dI T/dt limit 1 T2- G+ quadrant 0.5 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. ITSM / A BT132D IT(RMS) / A 2.5 T 20 150 ITSM IT 10 10us 100 Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. BT132D ITSM / A 50 Tlead / C Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 1.6 I TSM T 15 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 51˚C. BT136 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 10 1 0.8 5 0.6 0 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. April 1998 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.000 Philips Semiconductors Product specification Triacs logic level 3 BT131 series IGT(Tj) IGT(25 C) 2 BT131 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- GT2- G+ 2.5 BT134W IT / A 1.5 Vo = 1.0 V Rs = 0.21 Ohms 2 typ 1 1.5 max 1 0.5 0.5 0 0 -50 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. 100 TRIAC 2.5 BT134W Zth j-sp (K/W) 10 unidirectional 2 bidirectional 1 1.5 P D 1 tp 0.1 0.5 t 0 -50 0 50 Tj / C 100 0.01 10us 150 IH(Tj) IH(25C) 1ms 10ms 0.1s 1s 10s tp / s Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1000 TRIAC dVD/dt (V/us) 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. April 1998 0 4 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT131 series MECHANICAL DATA Dimensions in mm 2.54 Net Mass: 0.2 g 0.66 0.56 1.6 4.2 max 4.8 max 5.2 max 12.7 min 0.48 0.40 321 0.40 min Fig.13. TO92 ; plastic envelope. Notes 1. Epoxy meets UL94 V0 at 1/8". April 1998 5 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT131 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 6 Rev 1.000