Philips Semiconductors Product specification Triacs BTA140 series GENERAL DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - TO220AB PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. UNIT BTA140Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION 600 600 800 800 V 25 190 25 190 A A SYMBOL tab T2 tab T1 G 1 23 main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS MIN. - full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX. -500 5001 -600 6001 UNIT -800 800 V - 25 A - 190 209 180 A A A2s -40 - 50 50 50 10 2 5 5 0.5 150 125 A/µs A/µs A/µs A/µs A V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. May 2003 1 Rev 1.500 Philips Semiconductors Product specification Triacs BTA140 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 60 1.0 1.4 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- GT2- G+ - 6 10 11 23 35 35 35 70 mA mA mA mA T2+ G+ T2+ GT2- GT2- G+ - 8 30 18 15 40 60 40 60 mA mA mA mA IT = 30 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 - 7 12 1.3 0.7 0.4 0.1 60 60 1.55 1.5 0.5 mA mA V V V mA STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current VD = 12 V; IT = 0.1 A IL Latching current IH Holding current VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A T2+ T2- DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 25 A; dIcom/dt = 9 A/ms; gate open circuit ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 100 300 - V/µs - 10 - V/µs - 2 - µs dVcom/dt tgt May 2003 2 Rev 1.500 Philips Semiconductors Product specification Triacs 40 BTA140 series Tmb(max) / C Ptot / W 85 30 = 180 30 IT(RMS) / A BTA140 91 C 25 95 1 120 90 20 60 20 105 30 15 10 115 10 5 0 0 5 10 15 IT(RMS) / A 20 125 30 25 0 -50 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 50 Tmb / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. ITSM / A 50 IT(RMS) / A 40 30 100 dI T /dt limit 20 I TSM IT T2- G+ quadrant T 10 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 200 1.6 ITSM T 150 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 91˚C. ITSM / A IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) 1.4 time Tj initial = 25 C max 1.2 100 1 0.8 50 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. May 2003 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.500 Philips Semiconductors Product specification Triacs 5 BTA140 series IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+ 4 BTA140 IT / A 80 Tj = 125 C Tj = 25 C 70 typ 60 Vo = 1.073 V max Rs = 0.015 ohms 50 3 40 2 30 20 1 10 0 -50 0 50 Tj / C 100 0 150 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 IL(Tj) IL(25 C) 10 2.5 BTA140 Zth j-mb (K/W) 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. IH(Tj) IH(25C) 1000 dV/dt (V/us) off-state dV/dt limit 2.5 100 2 1.5 dIcom/dt = 25 A/ms 10 1 20 15 12 9.0 7.0 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. May 2003 0 Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. 4 Rev 1.500 Philips Semiconductors Product specification Triacs BTA140 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 2003 5 Rev 1.500 Philips Semiconductors Product specification Triacs BTA140 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 2003 6 Rev 1.500