PHILIPS BYX90G

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D181
BYX90G
High-voltage soft-recovery
controlled avalanche rectifier
Product specification
Supersedes data of June 1996
1996 Sep 26
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Soft-recovery switching
characteristics
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
• Guaranteed avalanche energy
absorption capability.
handbook, halfpage
APPLICATIONS
• High-voltage rectification at high
frequencies
• Sub-component for very high
voltage rectifiers, for example, in
X-ray and radar equipment.
k
a
MSA480
The cathode is marked by a black band on the body.
Fig.1 Simplified outline (SOD83A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
7.5
kV
VRWM
crest working reverse voltage
−
6
kV
IF(AV)
average forward current
−
550
IFRM
repetitive peak forward current
−
5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj = Tj max
prior to surge; VR = VRWMmax;
see Fig.4
−
20
A
PRSM
non-repetitive peak reverse power
dissipation
t = 10 µs; triangular pulse;
Tj = Tj max prior to surge
−
5
Tstg
storage temperature
−65
+165
°C
Tj
junction temperature
−65
+165
°C
1996 Sep 26
averaged over any 20 ms period;
Toil = 45 °C; see Fig.2;
see also Fig.3
2
mA
kW
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 2 A; see Fig.5
−
−
14.5
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
8
−
−
kV
IR
reverse current
VR = VRWMmax; Tj = Tj max
−
−
50
µA
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.7
−
−
350
ns
THERMAL CHARACTERISTICS
SYMBOL
Rth j-o
PARAMETER
CONDITIONS
thermal resistance from junction to oil
note 1; see also Fig.6
Note
1. For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
VALUE
UNIT
20
K/W
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
GRAPHICAL DATA
MBH403
600
handbook, halfpage
MBH404
6
handbook, halfpage
IF(AV)
(mA)
a=3
P
(W)
2.5
400
2
4
1.57
1.42
200
2
0
0
100
Toil (°C)
200
0
0
200
400
600
IF(AV) (mA)
a = 1.57; δ = 0.5; VR = VRWMmax.
Fig.2
a = IF(RMS)/IF(AV); δ = 0.5; VR = VRWMmax.
Maximum permissible average forward
current as a function of oil temperature
(including losses due to reverse leakage).
Fig.3
MBH405
20
Maximum steady state power dissipation
(forward plus leakage losses) as a function
of average forward current.
MBH406
6
handbook, halfpage
handbook, halfpage
IF
(A)
IFSM
(A)
4
10
2
1
10−2
10−1
1
0
10
102
duration (s)
0
50 Hz half sinewave current burst.
Tj = 165 °C prior to surge.
VR = VRWMmax.
Dotted lines: Tj = 165 °C.
Solid line: Tj = 25 °C.
Fig.4
Fig.5
Maximum non-repetitive peak forward
current as a function of burst duration.
1996 Sep 26
4
8
16
VF (V)
24
Forward current as a function of maximum
forward voltage.
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
MBH391
102
handbook, halfpage
Zth
(K/W)
10
1
10−2
Fig.6
10−1
1
10
time (s)
102
Thermal impedance in oil as a function of
time.
handbook, full pagewidth
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.7 Test circuit and reverse recovery time waveform and definition.
1996 Sep 26
5
MAM057
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
APPLICATION INFORMATION
Typical 3-phase bridge application information
MBH414
6
handbook, halfpage
Ibridge
(A)
handbook, halfpage
Ibridge
4
2
0
101
Fig.8
T
102
103
T (ms)
MBH415
104
Maximum permissible output current in a 3-phase rectifier bridge with a minimum time between exposures
of 20 s; Toil = 50 °C.
1996 Sep 26
6
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
MBH416
5
handbook, full pagewidth
Ibridge
(IFRM)
(A)
4
δ = 10%
20%
3
40%
60%
80%
100%
2
1
0
0
0.25
0.5
0.75
1
1.25
tp (s)
handbook, halfpage
Ibridge
tp
trep
exposure
time (T)
Fig.9
δ = tp/trep × 100%
time between
exposures >20 s
MBH417
Maximum current through a 3-phase bridge rectifier versus pulse duration; exposure time T = 1 s;
Toil = 50 °C.
1996 Sep 26
7
1.5
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
MBH418
5
handbook, full pagewidth
Ibridge
(IFRM)
(A)
4
δ = 10%
3
20%
40%
2
60%
80%
100%
1
0
0
0.5
1
1.5
tp (s)
handbook, halfpage
Ibridge
tp
trep
exposure
time (T)
δ = tp/trep × 100%
time between
exposures >20 s
MBH417
Fig.10 Maximum current through a 3-phase bridge rectifier versus pulse duration; exposure time T = 3 s;
Toil = 50 °C.
1996 Sep 26
8
2
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
,
PACKAGE OUTLINE
1/1 page = 296 mm (Datasheet)
4.5
max
30.7 min
7.5 max
Dimensions in mm.
The marking band indicates the cathode.
30.7 min
1.35
max
27 mm
MSA219 - 2
Fig.11 SOD83A.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26
9