DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D189 BY584 High-voltage soft-recovery rectifier Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY584 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. • Excellent stability • Soft-recovery switching characteristics • Compact construction. k handbook, halfpage a APPLICATIONS MAM162 • Grid 2 supply in colour television picture tubes • High-voltage applications for: The cathode lead is marked with an orange band. – High frequencies – Switching applications. Fig.1 Simplified outline (SOD61A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1800 V VRRM repetitive peak reverse voltage − 1800 V VRW working reverse voltage − 1500 V IF(AV) average forward current averaged over any 20 ms period; Ttp = 25 °C; lead length = 10 mm; see Fig.2; see also Fig.4 − 85 mA averaged over any 20 ms period; Tamb = 60 °C; PCB mounting (see Fig.6); see Fig.3; see also Fig.4 − 50 mA − 800 mA − 5 IFRM repetitive peak forward current IFSM non-repetitive peak forward current Tstg storage temperature −65 +120 °C Tj junction temperature −65 +120 °C 1996 Sep 26 t ≤ 10 ms; half sinewave; Tj = Tj max prior to surge; VR = VRWmax 2 A Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY584 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER VF forward voltage CONDITIONS IF = 100 mA; Tj = Tj max; see Fig.5 MIN. TYP. MAX. − − 8.5 UNIT V IR reverse current VR = VRWmax; Tj = Tj max − − 3 µA Qr recovery charge when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.7 − − 1 nC tf fall time when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.7 100 − − ns trr reverse recovery time when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.7 − 200 − ns Cd diode capacitance VR = 0 V; f = 1 MHz − 2 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 100 K/W Rth j-a thermal resistance from junction to ambient note 1 155 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.6. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 26 3 Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY584 GRAPHICAL DATA MBH399 100 IF(AV) IF(AV) (mA) 80 (mA) 80 60 60 40 40 20 20 0 0 0 80 40 Ttp (°C) 0 120 Switched mode application. a = 1.42; δ = 0.5; VR = VRWmax; lead length = 10 mm. Fig.2 MBH400 100 handbook, halfpage handbook, halfpage Tamb (°C) 120 Switched mode application. a = 1.42; δ = 0.5; VR = VRWmax; device mounted as shown in Fig.6. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 MBH401 1000 80 40 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBH402 200 handbook, halfpage handbook, halfpage a = 3 2.5 2 1.57 1.42 P (mW) IF (mA) 500 100 0 0 0 80 IF(AV) (mA) 100 0 a = IF(RMS)/IF(AV); δ = 0.5; VR = VRWmax. Fig.4 VF (V) 20 Dotted line: Tj = 120 °C. Solid line: Tj = 25 °C. Maximum steady state power dissipation (forward plus leakage losses) as a function of average forward current. 1996 Sep 26 10 Fig.5 4 Forward current as a function of maximum forward voltage. Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY584 50 handbook, halfpage 25 handbook, halfpage I F 7 dI F 50 dt t rr 10% t Qr 2 90% 3 IR tf MGD569 MGA200 Dimensions in mm. Fig.6 Device mounted on a printed-circuit board. Fig.7 Reverse recovery definitions. APPLICATION INFORMATION handbook, full pagewidth VI VI horizontal deflectiontransformer D1 VIM = 1500 V 0 VO 11.5 µs 150 nF 1 MΩ t 64 µs to g2 VO VOM VO(AV) = 1500 V 0 MBH419 t D1 = BY584. Stable continuous operation is ensured at ambient temperatures up to 70 °C. Fig.8 Basic circuit and waveforms for grid 2 voltage supply in colour television picture tubes. 1996 Sep 26 5 Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY584 PACKAGE OUTLINE k a 0.6 handbook, full pagewidth 3 max 2.5 max 32.5 min 4.9 max 32.5 min MGD603 Dimensions in mm. The marking band indicates the cathode. Fig.9 SOD61A. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 26 6